FMBA14
FMBA14
C2
E1
C1
B2
E2
pin #1
B1
SuperSOT
-6
Mark: .1N
Dot denotes pin #1
NPN Multi-Chip Darlington Transistor
This device is designed for applications requiring extremely high current
gain at collector currents to 1.0 A. Sourced from Process 05.
Absolute Maximum Ratings*
Symbol
V
CES
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
T
A
= 25°C unless otherwise noted
Parameter
Value
30
30
10
1.2
-55 to +150
Units
V
V
V
A
°C
4
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJA
T
A
= 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Max
FMBA14
700
5.6
180
Units
mW
mW/°C
°C/W
1998 Fairchild Semiconductor Corporation
FMBA14
NPN Multi-Chip Darlington Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
V
(BR)CES
I
CBO
I
EBO
Collector-Emitter Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
I
C
= 100
µA,
I
B
= 0
V
CB
= 30 V, I
E
= 0
V
EB
= 10 V, I
C
= 0
30
100
100
V
nA
nA
ON CHARACTERISTICS*
h
FE
V
CE(
sat
)
V
BE(
on
)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
I
C
= 10 mA, V
CE
= 5.0 V
I
C
= 100 mA, V
CE
= 5.0 V
I
C
= 100 mA, I
B
= 0.1 mA
I
C
= 100 mA, V
CE
= 5.0 V
10K
20K
1.5
2.0
V
V
SMALL SIGNAL CHARACTERISTICS
h
fe
Small Signal Current Gain
I
C
= 10 mA, V
CE
= 5.0 V,
f = 100 MHz
1.25
MHz
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
Typical Characteristics
V
CESAT
- COLLECTOR EM ITTE R VOLTAGE (V)
h
F E
- TYPICAL PULSED CURRENT GAIN (K)
Typical Pulsed Current Gain
vs Collector Current
250
V
CE
= 5V
200
150
25 °C
125 °C
Collector-Emitter Saturation
Voltage vs Collector Current
1.6
β
= 1000
1.2
- 40 °C
0.8
25°C
125 °C
100
50
0
0.001
- 40 °C
0.4
0.01
0.1
I
C
- COLLECTOR CURRENT (A)
1
0
1
10
100
I
C
- COLLECTOR CURRE NT (mA)
1000
2
1.6
1.2
0.8
0.4
0
V
BEON
- BAS E EMITTER ON VOLTAGE (V)
V
BESAT
- BASE EMITTE R VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collect or Current
β
= 1000
- 40 °C
25 °C
125 °C
Base Emitter ON Voltage vs
Collector Current
2
1.6
1.2
125 °C
- 40 °C
25 °C
0.8
0.4
0
V
CE
= 5V
1
10
100
I
C
- COLLECTOR CURRE NT (mA)
1000
1
10
100
I
C
- COLLECTOR CURRE NT (mA)
1000
FMBA14
NPN Multi-Chip Darlington Transistor
(continued)
Typical Characteristics
(continued)
Collector-Cutoff Current
vs Ambient Temperature
100
V
CB
= 30V
BV
CER
- BREAKDOWN VOLTAGE (V)
I
CBO
- COLLE CTOR CURRENT (nA)
Collector-Emitter Breakdown
Voltage with Resistance
Between Emitter-Base
62.5
62
61.5
61
60.5
60
59.5
0.1
10
1
0.1
0.01
25
50
75
100
T
A
- AMBIE NT TEMP ERATURE (
°
C)
125
1
10
100
1000
RESISTANCE (k
Ω
)
Input and Output Capacitance
f
T
- GAIN BANDWIDTH PRODUCT (MHz)
vs Reverse Voltage
f = 1.0 MHz
CAPACITANCE (pF)
20
Gain Bandwidth Product
vs Collector Current
500
Vce = 5V
400
10
300
Cib
5
200
Cob
100
4
1
10
20
50
100 150
2
0.1
1
10
100
0
V
- COLLECTOR VOLTAGE(V)
I
C
- COLLECTOR CURRENT (mA)
Power Dissipation vs
Ambient Temperature
1
P
D
- POWER DISSIPATION (W)
0.75
SOT-6
0.5
0.25
0
0
25
50
75
100
o
TEMPERATURE ( C)
125
150
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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DOME™
E
2
CMOS
TM
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TM
FACT™
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DISCLAIMER
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OPTOPLANAR™
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DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
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