MIG75J7CSB1W
MITSUBISHI SEMICONDUCTOR <Intelligent Power Module>
MIG75J7CSB1W
(600V/75A 7in1)
High Power Switching Applications
Motor Control Applications
•
•
•
•
•
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Integrates inverter, brake power circuit and control circuits (IGBT drive units, and units for protection against
short-circuit current, over-current, under-voltage and over-temperature) into a single package.
The electrodes are isolated from the case
Low thermal resistance
V
CE (sat)
= 1.8 V (typ.)
UL recognized: File No.E87989
Weight: 278 g (typ.)
Equivalent Circuit
20
19
18
17
16
15
14
13
12 11 10
9
8
7
6
5
4
3
2
1
FO
IN V
D
GND
FO
IN V
D
GND
FO
IN V
D
GND
FO
IN V
D
GND
GND IN FO V
D
GND IN FO V
D
GND IN FO V
D
GND V
S
OUT
GND V
S
OUT
GND V
S
OUT
GND V
S
OUT
GND V
S
OUT
GND V
S
OUT
GND V
S
OUT
W
1.
8.
15.
V
D
(U)
GND (V)
Open
2.
9.
16.
V
FO (U)
V
D
(W)
IN (B)
3.
10.
17.
IN (U)
FO (W)
IN (X)
U
4.
11.
18.
GND (U)
IN (W)
IN (Y)
B
5.
12.
19.
V
D
(V)
GND (W)
IN (Z)
6.
13.
20.
FO (V)
V
D
(L)
GND (L)
N
7.
14.
IN (V)
FO (L)
P
2004-10-01
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MIG75J7CSB1W
Package Dimensions
Unit: mm
1.
7.
13.
19.
V
D
(U)
IN (V)
V
D
(L)
IN (Z)
2.
8.
14.
20.
FO (U)
GND (V)
FO (L)
GND (L)
3.
9.
15.
IN (U)
V
D
(W)
Open
4.
10.
16.
GND (U)
FO (W)
IN (B)
5.
11.
17.
V
D
(V)
IN (W)
IN (X)
6.
12.
18.
FO (V)
GND (W)
IN (Y)
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MIG75J7CSB1W
Signal Terminal Layout
Unit: mm
1.
7.
13.
19.
V
D
(U)
IN (V)
V
D
(L)
IN (Z)
2.
8.
14.
20.
FO (U)
GND (V)
FO (L)
GND (L)
3.
9.
15.
IN (U)
V
D
(W)
Open
4.
10.
16.
GND (U)
FO (W)
IN (B)
5.
11.
17.
V
D
(V)
IN (W)
IN (X)
6.
12.
18.
FO (V)
GND (W)
IN (Y)
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MIG75J7CSB1W
Maximum Ratings
(T
j
=
25°C)
Stage
Supply voltage
Collector-emitter voltage
Inverter
Collector current
Forward current
Collector power dissipation
Junction temperature
Supply voltage
Collector-emitter voltage
Collector current
Brake
Reverse voltage
Forward current
Collector power dissipation
Junction temperature
Control supply voltage
Input voltage
Control
Fault output voltage
Fault output current
Operating temperature
Storage temperature range
Module
Isolation voltage
Screw torque (Terminal)
Screw torque (Mounting)
AC 1 min
M4
M5
FO-GND Terminal
FO sink current
Tc
=
25°C, DC
Tc
=
25°C
⎯
V
D
-GND Terminal
IN-GND Terminal
Tc
=
25°C, DC
⎯
Tc
=
25°C, DC
Tc
=
25°C, DC
Tc
=
25°C, DC
⎯
P-N Power terminal
⎯
Characteristic
Condition
P-N Power terminal
⎯
Symbol
V
CC
V
CES
I
C
I
F
P
C
Tj
V
CC
V
CES
I
C
V
R
I
F
P
C
Tj
V
D
V
IN
V
FO
I
FO
Rating
450
600
75
75
460
150
450
600
50
600
50
340
150
20
20
20
14
−20~ +
100
−40~ +
125
2500
2
N½m
3
Unit
V
V
A
A
W
°C
V
V
A
V
A
W
°C
V
V
V
mA
°C
°C
V
⎯
⎯
Tc
Tstg
V
ISO
⎯
⎯
Electrical Characteristics
1. Inverter stage
Characteristics
Collector cut-off current
Symbol
I
CEX
Test Condition
V
CE
=
600 V
V
D
=
15 V
I
C
=
75 A
V
IN
=
15 V
→
0 V
I
F
=
75 A, Tj
=
25°C
V
CC
=
300 V, I
C
=
75 A
V
D
=
15 V, V
IN
=
15 V
↔
0 V
Tj
=
25°C, Inductive load
(Note 1)
Tj
=
25°C
Tj
=
125°C
Tj
=
25°C
Tj
=
125°C
Min
⎯
⎯
1.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
1.8
2.0
1.8
1.3
0.25
0.2
1.1
0.2
Max
1
10
2.2
⎯
2.2
2.2
⎯
⎯
2.1
⎯
µs
V
V
Unit
mA
Collector-emitter saturation voltage
Forward voltage
V
CE (sat)
V
F
t
on
t
c (on)
Switching time
t
rr
t
off
t
c (off)
Note 1: Switching time test circuit & timing chart
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MIG75J7CSB1W
2. Brake stage
Characteristics
Collector cut-off current
Symbol
I
CEX
Test Condition
V
CE
=
600 V
V
D
=
15 V
I
C
=
50 A
V
IN
=
15 V
→
0 V
V
R
= 600 V
I
F
=
50 A, Tj
=
25°C
V
CC
=
300 V, I
C
=
50 A
V
D
=
15 V, V
IN
=
15 V
↔
0 V
Tj
=
25°C, Inductive load
(Note 1)
Tj
=
25°C
Tj
=
125°C
Tj
=
25°C
Tj
=
125°C
Tj
=
25°C
Tj
=
125°C
Min
⎯
⎯
⎯
⎯
⎯
⎯
1.5
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
1.8
2.0
⎯
⎯
1.9
1.3
0.65
0.8
1.1
0.2
Max
1
10
2.2
⎯
1
10
2.3
1.8
⎯
⎯
2.1
⎯
µs
V
V
Unit
mA
Collector-emitter saturation voltage
V
CE (sat)
Reverse current
Forward voltage
I
R
V
F
t
on
t
c (on)
mA
Switching time
t
rr
t
off
t
c (off)
Note 1: Switching time test circuit & timing chart
3. Control stage
(Tj
=
25°C)
Characteristics
Control circuit current
Input on signal voltage
Input off signal voltage
Protection
Fault output current
Normal
Over current protection
trip level
Inverter
Brake
SC
t
off (OC)
Trip level
Reset level
Trip level
Reset level
OT
OTr
UV
UVr
t
FO
V
D
=
15 V
⎯
High side
Low side
Symbol
I
D (H)
I
D (L)
V
IN (on)
V
IN (off)
I
FO (on)
I
FO (off)
OC
V
D
=
15 V
Test Condition
Min
⎯
⎯
1.4
2.2
⎯
⎯
120
80
120
80
⎯
110
⎯
11.0
12.0
1
Typ.
13
52
1.6
2.5
10
⎯
⎯
⎯
⎯
⎯
5
118
98
12.0
12.5
2
Max
17
68
1.8
2.8
12
mA
0.1
⎯
⎯
⎯
⎯
⎯
125
⎯
12.5
V
13.0
3
ms
A
V
Unit
mA
V
D
=
15 V
V
D
=
15 V
V
D
=
15 V, Tj
<
125°C
=
V
D
=
15 V, Tj
<
125°C
=
V
D
=
15 V
Case temperature
Short circuit protection trip Inverter
level
Brake
Over current cut-off time
Over temperature
protection
Control supply under
voltage protection
Fault output pulse width
A
µs
°C
4. Thermal resistance
(Tc
=
25°C)
Characteristics
Symbol
Test Condition
Inverter IGBT
Junction to case thermal resistance
R
th (j-c)
Inverter FRD
Brake IGBT
Brake FRD
Case to fin thermal resistance
R
th (c-f)
Compound is applied
Min
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
0.017
Max
0.270
0.313
0.360
0.600
⎯
°C/W
°C/W
Unit
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