PROFET® BTS 542 E2
Smart Highside Power Switch
Features
·
Overload protection
·
Current limitation
·
Short-circuit protection
·
Thermal shutdown
·
Overvoltage protection (including load dump)
·
Fast demagnetization of inductive loads
·
Reverse battery protection
1)
·
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
·
Open drain diagnostic output
·
Open load detection in ON-state
·
CMOS compatible input
·
Loss of ground and loss of
V
bb
protection
2)
·
Electrostatic discharge
(ESD) protection
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Load current (ISO)
Current limitation
V
bb(AZ)
V
bb(on)
R
ON
I
L(ISO)
I
L(SCr)
63
V
4.5 ... 42 V
18 m
W
21
A
70
A
TO-218AB/5
5
Standard
Application
· m
C compatible power switch with diagnostic
feedback for 12 V and 24 V DC grounded loads
·
All types of resistive, inductive and capacitve loads
·
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, integrated in Smart SIPMOS
â
chip on chip technology. Fully protected by embedded protection
functions.
R
bb
+ V
bb
3
Voltage
source
Overvoltage
protection
Current
limit
Gate
protection
8
Logic
Voltage
sensor
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Open load
OUT
2
IN
Temperature
sensor
5
ESD
Logic
detection
Load
4
ST
Short circuit
detection
GND
®
PROFET
Load GND
1
Signal GND
1)
2)
No external components required, reverse load current limited by connected load.
Additional external diode required for charged inductive loads
Semiconductor Group
Page 1 of 13
8.Jan.96
BTS 542 E2
Pin
1
2
3
4
5
Symbol
GND
IN
Vbb
ST
OUT
(Load, L)
-
I
+
S
O
Function
Logic ground
Input, activates the power switch in case of logical high signal
Positive power supply voltage,
the tab is shorted to this pin
Diagnostic feedback, low on failure
Output to the load
Maximum Ratings
at
T
j
= 25 °C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 3)
Load dump protection
V
LoadDump
=
U
A
+
V
s
,
U
A
= 13.5 V
R
I
= 2
W
,
R
L
= 1.1
W
,
t
d
= 200 ms, IN= low or high
Load current (Short-circuit current, see page 4)
Operating temperature range
Storage temperature range
Power dissipation (DC)
Inductive load switch-off energy dissipation,
single pulse
T
j
=150 °C:
Electrostatic discharge capability (ESD)
(Human Body Model)
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6...
Symbol
V
bb
V
Load dump3
)
Values
63
80
self-limited
-40 ...+150
-55 ...+150
167
2.1
2.0
-0.5 ... +6
±
5.0
±
5.0
Unit
V
V
A
°C
W
J
kV
V
mA
I
L
T
j
T
stg
P
tot
E
AS
V
ESD
V
IN
I
IN
I
ST
Thermal resistance
chip - case:
junction - ambient (free air):
R
thJC
R
thJA
£
0.75 K/W
£
45
3)
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Semiconductor Group
Page 2
8.Jan.96
BTS 542 E2
Electrical Characteristics
Parameter and Conditions
at
T
j
= 25 °C,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
I
L
= 5 A
T
j
=25 °C:
R
ON
T
j
=150 °C:
Nominal load current (pin 3 to 5)
I
L(ISO)
ISO Proposal:
V
ON
= 0.5 V,
T
C
= 85 °C
Output current (pin
5
) while GND disconnected or
I
L(GNDhigh)
GND pulled up,
V
IN
= 0, see diagram page 7,
T
j
=-40...+150°C
Turn-on time
to 90%
V
OUT
:
t
on
Turn-off time
to 10%
V
OUT
:
t
off
R
L
= 12
W
,
T
j
=-40...+150°C
Slew rate on
dV /dt
on
10 to 30%
V
OUT
,
R
L
= 12
W
,
T
j
=-40...+150°C
Slew rate off
-dV/dt
off
70 to 40%
V
OUT
,
R
L
= 12
W
,
T
j
=-40...+150°C
Operating Parameters
Operating voltage
4
)
T
j
=-40...+150°C:
Undervoltage shutdown
T
j
=-40...+150°C:
Undervoltage restart
T
j
=-40...+150°C:
Undervoltage restart of charge pump
see diagram page 12
T
j
=-40...+150°C:
Undervoltage hysteresis
D
V
bb(under)
=
V
bb(u rst)
-
V
bb(under)
Overvoltage shutdown
T
j
=-40...+150°C:
Overvoltage restart
T
j
=-40...+150°C:
Overvoltage hysteresis
T
j
=-40...+150°C:
Overvoltage protection
5
)
T
j
=-40°C:
I
bb
=40 mA
T
j
=25...+150°C:
Standby current (pin 3)
T
j
=-40...+25°C
:
V
IN
=0
T
j
=150°C:
Leakage output current (included in
I
bb(off)
)
V
IN
=0
Operating current (Pin 1)
6)
,
V
IN
=5 V
--
17
--
15
28
21
--
18
35
--
1
m
W
A
mA
100
10
0.2
0.4
--
--
--
--
350
130
2
5
m
s
V/
m
s
V/
m
s
V
bb(on)
V
bb(under)
V
bb(u rst)
V
bb(ucp)
4.5
2.4
--
--
--
42
42
--
60
63
--
--
--
--
--
--
--
6.5
0.2
--
--
0.2
--
67
12
18
6
1.1
42
4.5
4.5
7.5
--
52
--
--
--
25
60
--
--
V
V
V
V
V
V
V
V
V
D
V
bb(under)
V
bb(over)
V
bb(o rst)
D
V
bb(over)
V
bb(AZ)
I
bb(off)
I
L(off)
I
GND
m
A
m
A
mA
4
)
5)
6
)
At supply voltage increase up to
V
bb
= 6.5 V typ without charge pump,
V
OUT
»
V
bb
- 2 V
see also
V
ON(CL)
in table of protection functions and circuit diagram page 7. Meassured without load
.
Add
I
ST
, if
I
ST
> 0, add
I
IN
, if
V
IN
>5.5 V
Semiconductor Group
Page 3
8.Jan.96
BTS 542 E2
Parameter and Conditions
at
T
j
= 25 °C,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Protection Functions
Initial peak short circuit current limit (pin 3 to 5)
7
)
,
I
L(SCp)
( max 400
m
s if
V
ON
>
V
ON(SC)
)
T
j
=-40°C:
T
j
=25°C:
T
j
=+150°C:
Repetitive short circuit current limit
I
L(SCr)
T
j
=
T
jt
(see timing diagrams, page 10)
Short circuit shutdown delay after input pos. slope
V
ON
>
V
ON(SC)
,
T
j
=-40..+150°C:
t
d(SC)
min value valid only, if input "low" time exceeds 30
m
s
--
--
45
30
80
--
--
150
--
--
--
95
--
70
--
58
8.3
--
10
--
140
--
--
--
400
--
--
--
--
2.1
1.7
1.2
32
--
A
A
m
s
V
V
°C
K
J
Output clamp (inductive load switch off)
at
V
OUT
=
V
bb
-
V
ON(CL),
I
L
= 30 mA
Short circuit shutdown detection voltage
(pin 3 to 5)
Thermal overload trip temperature
Thermal hysteresis
Inductive load switch-off energy dissipation
8)
,
T
j Start
= 150 °C, single pulse
V
bb
= 12 V:
V
bb
= 24 V:
Reverse battery (pin 3 to 1)
9
)
Integrated resistor in
V
bb
line
Diagnostic Characteristics
Open load detection current
(on-condition)
V
ON(CL)
V
ON(SC)
T
jt
,
T
jt
E
AS
E
Load12
E
Load24
-V
bb
R
bb
--
--
--
120
W
V
T
j
=-40 °C
:
I
L (OL)
T
j
=25..150°C:
2
2
--
--
1900
1500
mA
7
)
8)
Short circuit current limit for max. duration of t
d(SC) max
=400
m
s, prior to shutdown
While demagnetizing load inductance, dissipated energy in PROFET is
E
AS
=
ò
V
ON(CL)
*
i
L
(t) dt, approx.
V
ON(CL)
2
E
AS
=
1
/
2
*
L
*
I
L
* (
), see diagram page 8
V
ON(CL)
-
V
bb
Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.
Reverse current I
GND
of
»
0.3 A at V
bb
= -32 V through the logic heats up the device. Time allowed under
these condition is dependent on the size of the heatsink. Reverse I
GND
can be reduced by an additional
external GND-resistor (150
W
). Input and Status currents have to be limited (see max. ratings page 2 and
circuit page 7).
9
)
Semiconductor Group
Page 4
8.Jan.96
BTS 542 E2
Parameter and Conditions
at
T
j
= 25 °C,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Input and Status Feedback
10
)
Input turn-on threshold voltage
V
IN(T+)
T
j
=-40..+150°C:
V
IN(T-)
T
j
=-40..+150°C:
1.5
1.0
--
1
10
80
350
--
--
0.5
--
25
200
--
2.4
--
--
30
50
400
1600
V
V
V
m
A
Input turn-off threshold voltage
Input threshold hysteresis
Off state input current (pin 2),
V
IN
= 0.4 V
On state input current (pin 2),
V
IN
= 3.5 V
Status invalid after positive input slope
(short circuit)
Tj=-40
... +150°C:
Status invalid after positive input slope
(open load)
Tj=-40
... +150°C:
Status output (open drain)
Zener limit voltage
T
j
=-40...+150°C,
I
ST
= +1.6 mA:
ST low voltage
T
j
=-40...+150°C,
I
ST
= +1.6 mA:
D
V
IN(T)
I
IN(off)
I
IN(on)
t
d(ST SC)
t
d(ST)
m
A
m
s
m
s
V
V
ST(high)
V
ST(low)
5.4
--
6.1
--
--
0.4
10)
If a ground resistor R
GND
is used, add the voltage drop across this resistor.
Semiconductor Group
Page 5
8.Jan.96
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