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FMS6G10US60 Compact & Complex Module
August 2005
FMS6G10US60
Compact & Complex Module
Features
• Short Circuit Rated 10µs @ T
C
= 100°C, V
GE
= 15V
• High Speed Switching
• Low Saturation Voltage : V
CE
(sat) = 2.1 V @ I
C
= 10A
• High Input Impedance
• Built-in 3 Phase Rectifier Circuit
• Fast & Soft Anti-Parallel FWD
• Built-in NTC Thermistor
Description
Fairchild IGBT Power Module provides low conduction and
switching losses as well as short circuit ruggedness. It’s
designed for the applications such as motor control and general
inverters where short-circuit ruggedness is required.
Applications
• AC & DC Motor Controls
• General Purpose Inverters
• Robotics
• Servo Controls
• UPS
4
5
19
17
21
22
23
24
20
18
13
16
14
15
8
9
3
6
7
NTC
11
10
12
Package Code : 25PM-AA
Internal Circuit Diagram
©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FMS6G10US60 Rev. B1
FMS6G10US60 Compact & Complex Module
Absolute Maximum Ratings
Symbol
Inverter
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
P
D
T
SC
Converter
V
RRM
I
O
I
FSM
I
2
t
Common
T
J
T
STG
V
ISO
Mounting Torque
Notes :
T
C
= 25°C unless otherwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Short Circuit Withstand Time
Repetitive Peak Reverse Voltage
Average Output Rectified Current
Surge Forward Current
@ 1Cycle at 60Hz, Peak value Non-Repetitive
Energy pulse @ 1Cycle at 60Hz
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Mounting part Screw
@ AC 1minute
@ M4
@ T
C
= 25°C
@ T
C
= 100°C
@ T
C
= 80°C
@ T
C
= 80°C
FMS6G10US60
600
± 20
10
20
10
20
66
10
1600
10
100
42
-40 to +150
-40 to +125
2500
2.0
Units
V
V
A
A
A
A
W
µs
V
A
A
A
2
s
°C
°C
V
N·m
(1) Repetitive rating : Pulse width limited by max. junction temperature
Package Marking and Ordering Information
Device Marking
FMS6G10US60
Device
FMS6G10US60
Package
25PM-AA
Reel Size
--
Tape Width
--
Quantity
--
(2) TMC2 Relibility test was done under -45°C ~ 125°C
FMS6G10US60 Rev. B1
2
www.fairchildsemi.com
FMS6G10US60 Compact & Complex Module
Electrical Characteristics of IGBT
@ Inverter
Symbol
Off Characteristics
BV
CES
∆B
VCES
/
∆T
J
I
CES
I
GES
Collector-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown
Voltage
Collector Cut-Off Current
Gate - Emitter Leakage Current
T
C
= 25°C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
GE
= 0V, I
C
= 250µA
V
GE
= 0V, I
C
= 1mA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
600
--
--
--
--
0.6
--
--
--
--
250
± 100
V
V/°C
µA
nA
On Characteristics
V
GE(th)
V
CE(sat)
Gate - Emitter Threshold Voltage
Collector to Emitter Saturation Voltage
I
C
= 10mA, V
CE
= V
GE
I
C
= 10A
,
V
GE
= 15V
5.0
--
6.5
2.1
8.5
2.7
V
V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
--
--
710
57
12
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
T
sc
Q
g
Q
ge
Q
gc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Short Circuit Withstand Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CC
= 300 V, V
GE
= 15V
@ T
C
= 100°C
V
CE
= 300 V, I
C
= 10A,
V
GE
= 15V
V
CC
= 300 V, I
C
= 10A,
R
G
= 20Ω, V
GE
= 15V,
Inductive Load, T
C
= 125°C
V
CC
= 300 V, I
C
= 10A,
R
G
= 20Ω, V
GE
= 15V,
Inductive Load, T
C
= 25°C
--
--
--
--
--
--
--
--
--
--
--
--
10
--
--
--
65
65
80
100
0.15
0.2
70
60
90
200
0.16
0.3
--
35
8
12
130
130
160
200
--
--
140
120
180
350
--
--
--
50
15
20
ns
ns
ns
ns
mJ
mJ
ns
ns
ns
ns
mJ
mJ
µs
nC
nC
nC
FMS6G10US60 Rev. B1
3
www.fairchildsemi.com
FMS6G10US60 Compact & Complex Module
Electrical Characteristics of DIODE
@ Inverter
Symbol
V
FM
t
rr
I
rr
Q
rr
T
C
= 25°C unless otherwise noted
Parameter
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Test Conditions
I
F
= 10A
I
F
= 10A
di / dt = 20 A/µs
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
Min.
--
--
--
--
--
--
--
--
Typ.
1.9
2.0
85
110
0.7
1.0
30
55
Max.
2.8
--
150
--
1.4
--
105
--
Units
V
ns
A
nC
Electrical Characteristics of DIODE
@ Converter
T
Symbol
V
FM
I
RRM
C
= 25°C unless otherwise noted
Parameter
Diode Forward Voltage
Repetitive Reverse Current
Test Conditions
I
F
= 10A
V
R
= V
RRM
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
Min.
--
--
--
--
Typ.
1.1
1.0
--
5
Max.
1.5
--
8
--
Units
V
mA
Thermal Characteristics
Symbol
Inverter
Converter
Weight
R
θJC
R
θJC
R
θJC
Parameter
Junction-to-Case (IGBT Part, per 1/6 Module)
Junction-to-Case (DIODE Part, per 1/6 Module)
Junction-to-Case (DIODE Part, per 1/6 Module)
Weight of Module
Typ.
--
--
--
60
Max.
1.9
2.9
2.5
--
Units
°C/W
°C/W
°C/W
g
NTC Thermistor Characteristics
Symbol
Thermistor
R25
B(25/100)
B - Value
Parameter
Rated Resistance @ T
C
= 25°C
Tol.
+/- 5 %
+/- 3 %
Typ.
4.7
3530
Units
KΩ
FMS6G10US60 Rev. B1
4
www.fairchildsemi.com
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