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GM72V28841ALT-8: 产品描述Synchronous DRAM, 16MX8, 6ns, CMOS, PDSO54, 0.400 INCH, TSOP2-54; 产品类别存储存储; 文件大小219KB，共21页; 制造商SK Hynix(海力士); 官网地址http://www.hynix.com/eng/

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GM72V28841ALT-8概述

Synchronous DRAM, 16MX8, 6ns, CMOS, PDSO54, 0.400 INCH, TSOP2-54

GM72V28841ALT-8规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	SK Hynix(海力士)
零件包装代码	TSOP2
包装说明	TSOP2, TSOP54,.46,32
针数	54
Reach Compliance Code	compliant
ECCN代码	EAR99
访问模式	FOUR BANK PAGE BURST
最长访问时间	6 ns
其他特性	AUTO/SELF REFRESH
最大时钟频率 (fCLK)	125 MHz
I/O 类型	COMMON
交错的突发长度	1,2,4,8
JESD-30 代码	R-PDSO-G54
JESD-609代码	e0
长度	22.22 mm
内存密度	134217728 bit
内存集成电路类型	SYNCHRONOUS DRAM
内存宽度	8
功能数量	1
端口数量	1
端子数量	54
字数	16777216 words
字数代码	16000000
工作模式	SYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	16MX8
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	TSOP2
封装等效代码	TSOP54,.46,32
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE
峰值回流温度（摄氏度）	NOT SPECIFIED
电源	3.3 V
认证状态	Not Qualified
刷新周期	4096
座面最大高度	1.2 mm
自我刷新	YES
连续突发长度	1,2,4,8,FP
最大待机电流	0.0004 A
最大压摆率	0.23 mA
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	3 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子面层	Tin/Lead (Sn/Pb)
端子形式	GULL WING
端子节距	0.8 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
宽度	10.16 mm

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GM72V28841AT/ALT

4Banks x 4M x 8Bit Synchronous DRAM

Description

The GM72V28841AT/ALT is a synchronous

dynamic random access memory comprised of

134,217,728 memory cells and logic including

input and output circuits operating synchronously

by referring to the positive edge of the externally

provided Clock.

The GM72V28841AT/ALT provides four

banks of 4,194,304 word by 8 bit to realize high

bandwidth with the Clock frequency up to 125

Mhz.

Pin Configuration

VCC

DQ0

VCCQ

DQ1

VSSQ

DQ2

VCCQ

DQ3

VSSQ

VCC

/WE

/CAS

/RAS

/CS

BA0/A13

BA1/A12

A10,AP

VCC

Features

* PC100/PC66 Compatible

-8(125MHz)

-7K(PC100,2-2-2)/-7J(PC100,3-2-2)

-10K(PC66)

* 3.3V single Power supply

* LVTTL interface

* Max Clock frequency

100/125 MHz

* 4,096 refresh cycle per 64 ms

* Two kinds of refresh operation

Auto refresh/ Self refresh

* Programmable burst access capability ;

- Sequence:Sequential / Interleave

- Length :1/2/4/8/FP

* Programmable CAS latency : 2/3

* 4 Banks can operate independently or

simultaneously

* Burst read/burst write or burst read/single

write operation capability

* Input and output masking by DQM input

* One Clock of back to back read or write

command interval

* Synchronous Power down and Clock

suspend capability with one Clock latency

for both entry and exit

* JEDEC Standard 54Pin 400mil TSOP II

Package

JEDEC STANDARD

400 mil 54 PIN TSOP II

(TOP VIEW)

VSS

DQ7

VSSQ

DQ6

VCCQ

DQ5

VSSQ

DQ4

VCCQ

VSS

DQM

CLK

CKE

A11

VSS

Pin Name

CLK

CKE

RAS

CAS

A0~A9,A11

A10 / AP

BA0/A13

~BA1/A12

DQ0~DQ7

DQM

VCCQ

VSSQ

VCC

VSS

Clock

Clock Enable

Chip Select

Row Address Strobe

Column Address Strobe

Write Enable

Address input

Address input or Auto Precharge

Bank select

Data input / Data output

Data input / output Mask

for DQ

Power for internal circuit

Ground for internal circuit

No Connection

This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev. 1.0/Dec.99

GM72V28841ALT-8相似产品对比

	GM72V28841ALT-8	GM72V28841AT-7J	GM72V28841ALT-7J	GM72V28841AT-10K	GM72V28841ALT-10K	GM72V28841ALT-7K
描述	Synchronous DRAM, 16MX8, 6ns, CMOS, PDSO54, 0.400 INCH, TSOP2-54	Synchronous DRAM, 16MX8, 6ns, CMOS, PDSO54, 0.400 INCH, TSOP2-54	Synchronous DRAM, 16MX8, 6ns, CMOS, PDSO54, 0.400 INCH, TSOP2-54	Synchronous DRAM, 16MX8, 8ns, CMOS, PDSO54, 0.400 INCH, TSOP2-54	Synchronous DRAM, 16MX8, 8ns, CMOS, PDSO54, 0.400 INCH, TSOP2-54	Synchronous DRAM, 16MX8, 6ns, CMOS, PDSO54, 0.400 INCH, TSOP2-54
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合
厂商名称	SK Hynix(海力士)	SK Hynix(海力士)	SK Hynix(海力士)	SK Hynix(海力士)	SK Hynix(海力士)	SK Hynix(海力士)
零件包装代码	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2
包装说明	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32
针数	54	54	54	54	54	54
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compli
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
访问模式	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
最长访问时间	6 ns	6 ns	6 ns	8 ns	8 ns	6 ns
其他特性	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
最大时钟频率 (fCLK)	125 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
交错的突发长度	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8
JESD-30 代码	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54
JESD-609代码	e0	e0	e0	e0	e0	e0
长度	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm
内存密度	134217728 bit	134217728 bit	134217728 bit	134217728 bit	134217728 bit	134217728 bi
内存集成电路类型	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
内存宽度	8	8	8	8	8	8
功能数量	1	1	1	1	1	1
端口数量	1	1	1	1	1	1
端子数量	54	54	54	54	54	54
字数	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words
字数代码	16000000	16000000	16000000	16000000	16000000	16000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
组织	16MX8	16MX8	16MX8	16MX8	16MX8	16MX8
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2
封装等效代码	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
电源	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
刷新周期	4096	4096	4096	4096	4096	4096
座面最大高度	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
自我刷新	YES	YES	YES	YES	YES	YES
连续突发长度	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP
最大待机电流	0.0004 A	0.001 A	0.0004 A	0.001 A	0.0004 A	0.0004 A
最大压摆率	0.23 mA	0.22 mA	0.22 mA	0.19 mA	0.19 mA	0.22 mA
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子节距	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
宽度	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm

GM72V28841ALT-8

GM72V28841ALT-8概述

GM72V28841ALT-8规格参数

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GM72V28841ALT-8相似产品对比

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