Ordering number:ENN2021A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1166/2SD1723
50V/8A Switching Applications
Applications
· Relay drivers, high-speed inverters, converters.
Package Dimensions
unit:mm
2043B
[2SB1166/2SD1723]
8.0
4.0
2.0
2.7
Features
· Low collector-to-emitter saturation voltage.
· High f
T
.
· Excellent linearity of h
FE
.
· Fast switchint time.
1.6
0.8
1.5
0.8
0.6
3.0
15.5
9.0
11.0
0.5
1
2
3
( ) : 2SB1166
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
4.8
1.2
2.4
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126LP
Ratings
(–)60
(–)50
(–)6
(–)8
(–)12
1.2
Unit
V
V
V
A
A
W
W
˚C
Tc=25˚C
20
150
–55 to +150
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE1
hFE2
fT
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)0.5A
VCE=(–)2V, IC=(–)6A
VCE=(–)5V, IC=(–)1A
70*
35
180
(130)
MHz
MHz
Conditions
Ratings
min
typ
max
(–)1
(–)1
400*
Unit
µA
µA
* : The 2SB1166/2SD1723 are classified by 0.5A h
FE
as follows :
Rank
hFE
Q
70 to 140
R
100 to 200
S
140 to 280
Continued on next page.
T
200 to 400
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1503TN (KT)/92098HA (KT)/4137KI/D176TA, TS No.2021–1/4
2SB1166/2SD1723
Continued from preceding page.
Parameter
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Cob
VCE(sat)
VBE(sat)
Conditions
VCB=(–)10V, f=1MHz
IC=(–)4A, IB=(–)0.2A
IC=(–)4A, IB=(–)0.2A
(–)60
(–)50
(–)6
(50)50
500
(450)
20(20)
Ratings
min
typ
65(95)
200
(–250)
(–)0.95
400
(–500)
(–)1.3
max
Unit
pF
mV
mV
V
V
V
V
ns
ns
ns
ns
V(BR)CBO IC=(–)10µA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
V(BR)EBO IE=(–)10µA, IC=0
ton
tstg
tf
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
Switching Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
IB1
OUTPUT
IB2
VR
50Ω
+
100µF
VBE= --5V
+
470µF
VCC=25V
RB
RL
IC=10IB1= --10IB2=4A
(For PNP, the polarity is reversed.)
--10
IC -- VCE
2SB1166
From top
--160mA
--140mA
--120mA
--100mA
--80mA
10
IC -- VCE
2SD1723
From top
100mA
90mA
80mA
70mA
60mA
Collector Current, IC – A
Collector Current, IC – A
--8
8
--6
--60mA
--40mA
6
50mA
40mA
30mA
--4
4
20mA
--20mA
--2
--10mA
IB=0
0
--0.4
--0.8
--1.2
--1.6
--2.0
2
10mA
0
0
0
0.4
0.8
1.2
IB=0
1.6
2.0
Collector-to-Emitter Voltage, VCE – V
ITR09096
--5
Collector-to-Emitter Voltage, VCE – V
ITR09097
5
IC -- VCE
2SB1166
--30mA
--25mA
IC -- VCE
30mA
25mA
2SD1723
Collector Current, IC – A
Collector Current, IC – A
--4
4
20mA
3
--20mA
--3
--15mA
--2
15mA
10mA
--10mA
--5mA
2
--1
1
5mA
0
0
--2
--4
--6
IB=0
--8
--10
0
0
2
4
IB=0
6
8
10
Collector-to-Emitter Voltage, VCE – V
ITR09098
Collector-to-Emitter Voltage, VCE – V
ITR09099
No.2021–2/4
2SB1166/2SD1723
--9
--8
IC -- VBE
2SB1166
VCE=--2V
Collector Current, IC – A
9
8
7
6
5
4
3
2
1
0
IC -- VBE
2SD1723
VCE=2V
Collector Current, IC – A
--7
--6
--5
--4
--3
--2
--1
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
ITR09100
Ta=
75
°
25
°
C
--25
C
°
C
0
0.2
0.4
0.6
Ta=
75
°
C
25
°
C
--25
°
C
0.8
1.0
1.2
ITR09101
Base-to-Emitter Voltage, VBE – V
1000
7
5
3
Base-to-Emitter Voltage, VBE – V
1000
hFE -- IC
2SB1166
VCE=--2V
hFE -- IC
2SD1723
VCE=2V
Ta=75°C
25°C
5
3
DC Current Gain, hFE
2
DC Current Gain, hFE
Ta=75°C
25
°C
2
100
7
5
3
2
10
7
5
--0.01
--25°C
100
--25
°C
5
3
2
10
5
0.01
2
3
5
--0.1
2
3
5
--1.0
2
3
5
Collector Current, IC – A
5
2
--10
ITR09102
2
3
5
0.1
2
3
5
1.0
2
3
5
Collector Current, IC – A
5
3
2
2
10
ITR09103
f T -- IC
2SB1166 /
2SD1723
VCE=5V
Output Capacitance, Cob -- pF
Cob -- VCB
2SB1166 /
2SD1723
f=1MHz
Gain-Bandwidth Product, fT – MHz
3
2
2SD17
2SB1
166
23
100
7
5
3
2
100
7
5
3
2
2SB
116
6
2SD
172
3
10
2
3
5
7 0.1
2
(For PNP, minus sign is omitted.)
3
5
7 1.0
2
3
10
(For PNP, minus sign is omitted.)
5
7
1.0
2
3
5
7
10
2
3
5
Collector Current, IC – A
5
3
10
ITR09104
5
3
5
7
Collector-to-Base Voltage, VCB -- V
100
ITR09105
7
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE (sat) – mV
VCE(sat) -- IC
2SD1723
IC / IB=20
Collector-to-Emitter
Saturation Voltage, VCE (sat) – mV
2
2SB1166
IC / IB=20
2
--1000
5
3
2
--100
5
3
2
--10
5
--0.01
2
3
5
--0.1
2
3
5
--1.0
2
3
5
1000
5
3
2
100
5
3
2
10
2
5
°
C
°
C
75
a=
T
5
°
C
--2
°
C
25
Ta=75
°C
5
2
3
5
2
3
--25
0.1
°
C
1.0
2
3
10
ITR09107
5
Collector Current, IC – A
--10
ITR09106
0.01
5
Collector Current, IC – A
No.2021–3/4
2SB1166/2SD1723
--10
7
VBE(sat) -- IC
2SB1166
IC / IB=20
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
10
7
5
3
2
VBE(sat) -- IC
2SD1723
IC / IB=20
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
5
3
2
--1.0
7
5
3
2
5
--0.01
2
3
5
Ta=
--25°C
75
°C
25
°C
1.0
7
5
3
2
5
2
3
5
25
°C
Ta=
--25°C
75
°C
--0.1
2
3
5
--1.0
2
3
Collector Current, IC – A
2
10
5
--10
ITR09108
24
5
0.01
0.1
2
3
5
1.0
2
3
Collector Current, IC – A
10
ITR09109
5
ASO
ICP=12A
IC=8A
PC -- Ta
2SB1166 / 2SD1723
3
2
1.0
5
3
2
0.1
5
3
2
Collector Dissipation, P
C
– W
Collector Current, IC – A
1
10
10m
ms
0m
s
s
T
on
20
DC
ati
er
op
DC
16
op
25
c=
era
tio
°
C
nT
a=
12
25
°
C
8
0.01
0.1
2SB1166 /
2SD1723
Tc=25°C
Single pulse
(For PNP, minus sign is omitted.)
2
3
5
4
1.2
0
No heat sink
0
20
40
60
80
100
120
140
160
Collector-to-Emitter Voltage, VCE – V
1.0
2
3
5
10
2
3
100
ITR09110
5
Ambient Temperature, Ta – ˚C
ITR09111
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of December, 2003. Specifications and information herein are subject
to change without notice.
PS No.2021–4/4
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