Ordering number:ENN2046A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1165/2SD1722
50V/5A Switching Applications
Applications
· Relay drivers, high-speed inverters, converters.
Package Dimensions
unit:mm
2043B
[2SB1165/2SD1722]
8.0
4.0
2.0
2.7
Features
· Low collector-to-emitter saturation voltage.
· High f
T
.
· Excellent linearity of h
FE
.
· Fast switching time.
1.6
0.8
1.5
0.8
0.6
3.0
15.5
9.0
11.0
0.5
( ) : 2SB1165
1
2.4
2
3
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
4.8
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126LP
1.2
Ratings
(–)60
(–)50
(–)6
(–)5
(–)8
1.2
Unit
V
V
V
A
A
W
W
Tc=25˚C
20
150
–55 to +150
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE1
hFE2
fT
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)0.5A
VCE=(–)2V, IC=(–)4A
VCE=(–)5V, IC=(–)1A
70*
35
180
(130)
Q
70 to 140
R
100 to 200
S
140 to 280
T
200 to 400
Conditions
Ratings
min
typ
max
(–)1
(–)1
400*
Unit
µA
µA
MHz
MHz
* : The 2SB1165/2SD1722 are classified by 0.5A h
FE
as follows :
Rank
hFE
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1503TN (KT)/92098HA (KT)/4137KI/D176TA, TS No.2046–1/5
2SB1165/2SD1722
Continued from preceding page.
Parameter
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Cob
VCE(sat)
VBE(sat)
Conditions
VCB=(–)10V, f=1MHz
IC=(–)3A, IB=(–)0.15A
IC=(–)3A, IB=(–)0.15A
(–)60
(–)50
(–)6
(50)50
500
(450)
20(20)
Ratings
min
typ
40(60)
220
(–280)
(–)0.95
400
(–550)
(–)1.3
max
Unit
pF
mV
mV
V
V
V
V
ns
ns
ns
ns
V(BR)CBO IC=(–)10µA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
V(BR)EBO IE=(–)10µA, IC=0
ton
tstg
tf
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
Switching Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
IB1
OUTPUT
IB2
VR
50Ω
+
100ΩF
VBE= --5V
+
470µF
VCC=25V
RB
RL
IC=10IB1= --10IB2=2A
(For PNP, the polarity is reversed.)
--5
IC -- VCE
2SB1165
From top
--100mA
--90mA
--80mA
--70mA
--60mA
5
IC -- VCE
2SD1722
From top
50mA
45mA
40mA
35mA
30mA
Collector Current, IC – A
--30mA
Collector Current, IC – A
--4
A
--50m
--40mA
4
--3
--20mA
3
25mA
20mA
15mA
2
--2
--10mA
10mA
5mA
--1
1
0
0
--0.4
--0.8
--1.2
--1.6
IB=0
--2.0
ITR09079
0
0
0.4
0.8
1.2
IB=0
1.6
2.0
ITR09080
Collector-to-Emitter Voltage, VCE – V
--5
Collector-to-Emitter Voltage, VCE – V
5
IC -- VCE
2SB1165
IC -- VCE
2SD1722
Collector Current, IC – A
Collector Current, IC – A
--4
A
--30m
--25mA
30mA
4
25mA
--20mA
--3
20mA
3
--15mA
--2
15mA
2
--10mA
--5mA
10mA
5mA
--1
1
0
0
--2
--4
IB=0
--6
--8
--10
ITR09081
0
0
2
4
IB=0
6
8
10
ITR09082
Collector-to-Emitter Voltage, VCE – V
Collector-to-Emitter Voltage, VCE – V
No.2046–2/5
2SB1165/2SD1722
--6
IC -- VBE
2SB1165
VCE= --2V
6
IC -- VBE
2SD1722
VCE=2V
--5
5
Collector Current, IC – A
--4
Collector Current, IC – A
4
--3
3
--2
2
--1
Ta=
75
°
25
°
C
--25
C
°
C
1
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
ITR09083
0
0
0.2
0.4
0.6
0.8
1.0
1.2
ITR09084
Base-to-Emitter Voltage, VBE – V
1000
Base-to-Emitter Voltage, VBE – V
1000
hFE -- IC
2SB1165
VCE= --2V
Ta=75°C
25
°C
hFE -- IC
2SD1722
VCE=2V
Ta=75°C
5
3
5
3
25°C
DC Current Gain, hFE
2
DC Current Gain, hFE
2
100
--25°C
100
--25
°C
5
3
2
10
5
5
--0.01
2
3
5
--0.1
2
3
5
--1.0
2
3
5
3
2
10
5
Collector Current, IC – A
5
--10
ITR09085
3
2
5
5
0.01
2
3
5
0.1
2
3
Ta=
75
°
C
25
°
C
--25
°
C
5
2
3
1.0
Collector Current, IC – A
5
10
ITR09086
f T -- IC
2SB1165 /
2SD1722
VCE=5V
Cob -- VCB
2SB1165 /
2SD1722
f=1MHz
Gain-Bandwidth Product, fT – MHz
2
Output Capacitance, Cob -- pF
3
2S
100
7
5
3
2
22
D17
1165
100
7
5
3
2
2SB
116
5
2SD
172
2
2SB
10
7
10
2
3
5
7 0.1
2
(For PNP, minus sign is omitted.)
3
5
7 1.0
2
3
5
5
7
1.0
2
3
(For PNP, minus sign is omitted.)
5
7
10
2
3
5
Collector Current, IC – A
5
3
10
ITR09087
5
3
5
7
Collector-to-Base Voltage, VCB -- V
7 100
ITR09088
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE (sat) – mV
2SB1165
IC / IB=20
VCE(sat) -- IC
2SD1722
IC / IB=20
Collector-to-Emitter
Saturation Voltage, VCE (sat) – mV
2
--1000
5
3
2
--100
5
3
2
--10
5
--0.01
2
3
5
--0.1
2
3
5
--1.0
2
1000
5
3
2
100
5
3
2
10
°
C
25
7
Ta=
5
°
C
--2
5
°
C
25
°
C
5
°
Ta=7
C
5
°
C
--2
2
3
Collector Current, IC – A
--10
ITR09089
5
5
0.01
2
3
5
0.1
2
3
5
1.0
2
3
Collector Current, IC – A
5
10
ITR09090
No.2046–3/5
2SB1165/2SD1722
--10
7
VBE(sat) -- IC
2SB1165
IC / IB=20
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
10
7
5
3
2
VBE(sat) -- IC
2SD1722
IC / IB=20
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
5
3
2
--1.0
7
5
3
2
5
--0.01
25
°C
Ta=
--25°C
75
°C
1.0
7
5
3
2
5
2
Ta=
--25
°C
75
°C
25
°C
2
3
5
--0.1
2
3
5
--1.0
2
3
Collector Current, IC – A
2
10
5
--10
ITR09091
1.4
5
0.01
3
5
0.1
2
3
5
1.0
2
3
Collector Current, IC – A
5
10
ITR09092
ASO
ICP=8A
IC=5A
PC -- Ta
2SB1165 / 2SD1722
3
2
1.0
5
3
2
0.1
5
3
2
Collector Dissipation, P
C
– W
Collector Current, IC – A
2SB1165 /
2SD1722
1
10
ms
ms
DC
op
era
10
1.2
1.0
DC
0.8
No
op
he
era
at
s
0m
tio
nT
tio
nT
a=
0.6
sin
k
c=
°
C
25
25
°
C
0.4
0.01
2
Tc=25°C
Single pulse
For PNP, minus sign is omitted.
3
5
0.2
0
Collector-to-Emitter Voltage, VCE – V
24
1.0
2
3
5
10
2
3
100
ITR09093
5
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta – ˚C
ITR09094
PC -- Ta
2SB1165 / 2SD1722
Collector Dissipation, P
C
– W
20
16
12
8
4
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta – ˚C
ITR09095
No.2046–4/5
2SB1165/2SD1722
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of December, 2003. Specifications and information herein are subject
to change without notice.
PS No.2046–5/5
实时操作系统RTOS
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
