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2SK427U: 产品描述Small Signal Field-Effect Transistor, 0.02A I(D), 15V, 1-Element, N-Channel, Silicon, Junction FET, SPA, 3 PIN; 产品类别分立半导体晶体管; 文件大小224KB，共6页; 制造商SANYO; 官网地址http://www.semic.sanyo.co.jp/english/index-e.html

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2SK427U概述

Small Signal Field-Effect Transistor, 0.02A I(D), 15V, 1-Element, N-Channel, Silicon, Junction FET, SPA, 3 PIN

2SK427U规格参数

参数名称	属性值
包装说明	IN-LINE, R-PSIP-T3
针数	3
Reach Compliance Code	unknow
ECCN代码	EAR99
其他特性	LOW NOISE
配置	SINGLE
最小漏源击穿电压	15 V
最大漏极电流 (ID)	0.02 A
FET 技术	JUNCTION
JESD-30 代码	R-PSIP-T3
元件数量	1
端子数量	3
工作模式	DEPLETION MODE
最高工作温度	125 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	IN-LINE
极性/信道类型	N-CHANNEL
最大功率耗散 (Abs)	0.2 W
认证状态	Not Qualified
表面贴装	NO
端子形式	THROUGH-HOLE
端子位置	SINGLE
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON
Base Number Matches	1

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Ordering number:EN1404B

N-Channel Junction Silicon FET

2SK427

AM Tuner RF Amplifier Applications

Applications

· AM tuner RF amplifiers and low-noise amplifiers.

Package Dimensions

unit:mm

2034A

[2SK427]

4.0

2.2

Features

· Largey

.

· Ultralow noise figure.

· Small Crss.

0.4

0.5

0.6

0.4

1.8

15.0

3.0

0.4

1 2

1.3

1 : Source

2 : Gate

3 : Drain

SANYO : SPA

0.7

Specifications

Absolute Maximum Ratings

at Ta = 25˚C

Parameter

Drain-to-Source Voltage

Gate-to-Drain Voltage

Gate Current

Drain Current

Allowable Power Dissipation

Junction Temperature

Storage Temperature

Symbol

VDSS

VGDS

Tstg

Conditions

3.0

3.8nom

0.7

Ratings

–15

200

125

–55 to +125

Unit

˚C

Electrical Characteristics

at Ta = 25˚C

Parameter

Gate-to-Drain Breakdown Voltage

Gate-to-Source Leakage Current

Zero-Gate Voltage Drain Current

Cutoff Voltage

Forward Transfer Admittance

Input Capacitance

Reverse Transfer Capacitance

Noise Figure

Symbol

V(BR)GDS IG=–10µA, VDS=0

IGSS

VGS=–10V, VDS=0

IDSS*

VGS(off)

| yfs |

Ciss

Crss

VDS=5V, VGS=0

VDS=5V, ID=100µA

VDS=5V, VGS=0, f=1kHz

VDS=5V, VGS=0, f=1MHz

VDS=5V, ID=1mA, Rg=1k

Ω

, f=1kHz

Conditions

Ratings

min

–15

–1.0

1.2*

–0.5

8.0

7.0

2.0

1.5

12.0*

–1.5

typ

max

Unit

* : The 2SK427 is classified by I

DSS

as follows : (unit : mA)

1.2

3.5

2.1

6.0

1.7

5.0

3.0

8.5

2.5

7.3

4.2

12.0

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

42099TH (KT)/90895MO (KOTO)/6017KI/N283KI, TS (KOTO) 8-5644 No.1404–1/6

2SK427U相似产品对比

	2SK427U	2SK427T	2SK427P	2SK427Q	2SK427R	2SK427S
描述	Small Signal Field-Effect Transistor, 0.02A I(D), 15V, 1-Element, N-Channel, Silicon, Junction FET, SPA, 3 PIN	Small Signal Field-Effect Transistor, 0.02A I(D), 15V, 1-Element, N-Channel, Silicon, Junction FET, SPA, 3 PIN	Small Signal Field-Effect Transistor, 0.02A I(D), 15V, 1-Element, N-Channel, Silicon, Junction FET, SPA, 3 PIN	Small Signal Field-Effect Transistor, 0.02A I(D), 15V, 1-Element, N-Channel, Silicon, Junction FET, SPA, 3 PIN	Small Signal Field-Effect Transistor, 0.02A I(D), 15V, 1-Element, N-Channel, Silicon, Junction FET, SPA, 3 PIN	Small Signal Field-Effect Transistor, 0.02A I(D), 15V, 1-Element, N-Channel, Silicon, Junction FET, SPA, 3 PIN
包装说明	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3
针数	3	3	3	3	3	3
Reach Compliance Code	unknow	unknown	unknow	unknown	unknow	unknow
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
其他特性	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最小漏源击穿电压	15 V	15 V	15 V	15 V	15 V	15 V
最大漏极电流 (ID)	0.02 A	0.02 A	0.02 A	0.02 A	0.02 A	0.02 A
FET 技术	JUNCTION	JUNCTION	JUNCTION	JUNCTION	JUNCTION	JUNCTION
JESD-30 代码	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3
元件数量	1	1	1	1	1	1
端子数量	3	3	3	3	3	3
工作模式	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
最高工作温度	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大功率耗散 (Abs)	0.2 W	0.2 W	0.2 W	0.2 W	0.2 W	0.2 W
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO	NO	NO	NO
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
晶体管应用	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	-	1	-	1	1

2SK427U

2SK427U概述

2SK427U规格参数

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