INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SD1707
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 80V(Min)
·Good
Linearity of h
FE
·Low
Collector Saturation Voltage-
: V
CE(
sat
)
= 0.5V(Max.)@ I
C
= 8A
·Complement
to Type 2SB1156
APPLICATIONS
·Designed
for power switching applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
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VALUE
UNIT
130
V
80
V
7
V
20
A
30
A
100
W
I
C
Collector Current-Continuous
I
CP
Collector Current-Pulse
Collector Power Dissipation
@ T
C
=25℃
P
C
Collector Power Dissipation
@ T
a
=25℃
T
J
Junction Temperature
3
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CE
(sat)-1
V
CE
(sat)-2
V
BE
(sat)-1
V
BE
(sat)-2
I
CBO
I
EBO
h
FE-1
h
FE-2
h
FE-3
f
T
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base -Emitter Saturation Voltage
Base -Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
DC Current Gain
CONDITIONS
I
C
= 10mA; I
B
= 0
I
C
= 8A; I
B
= 0.4A
B
2SD1707
MIN
80
TYP.
MAX
UNIT
V
0.5
1.5
1.5
2.5
10
50
V
V
V
V
μA
μA
I
C
= 20A; I
B
= 2A
I
C
= 8A; I
B
= 0.4A
B
I
C
= 20A; I
B
= 2A
V
CB
= 100V; I
E
= 0
V
EB
= 5V; I
C
= 0
Current-Gain—Bandwidth Product
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w
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I
C
= 0.1A; V
CE
= 2V
I
C
= 3A; V
CE
= 2V
45
60
I
C
= 10A; V
CE
= 2V
30
I
C
= 0.5A; V
CE
= 10V
I
C
=
8A, I
B1
= -I
B2
= 0.8A
260
20
MHz
Switching Times
t
on
t
stg
t
f
Turn-on Time
Storage Time
Fall Time
0.5
2.0
0.2
μs
μs
μs
h
FE-2
Classifications
R
60-120
Q
90-180
P
130-260
isc Website：www.iscsemi.cn
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