Supertex inc.
High Voltage, Dimmable
EL Lamp Driver
►
360V
PP
output voltage for high brightness
►
Large output load capability of up to 150nF
►
2.7 to 5.5V operating supply voltage
►
Single lithium ion cell compatible
►
Adjustable output regulation for dimming
►
External switching MOSFET
►
Low audible noise
►
Output discharge slew rate control
►
1.5V logic
►
Dedicated Enable pin
►
Two EL frequency controls
►
Independent lamp and converter frequency setting
►
Split supply capability
►
Available in 4x4 QFN and 16-Lead SOW packages
HV816
Features
The operating input supply voltage is 2.7 to 5.5V, but the En-
able (EN) and Select (SEL) interface to the device will accept
logic high levels down to 1.5V. The EN input is for turning the
device ON and OFF. The SEL input is for external logic control
of the H-bridge switching frequency, if required.
The HV816 boost converter stage uses a single inductor and
a minimum number of external components. The input voltage
to the inductor can be different from the input voltage to the
HV816 (split supply). The external inductor is connected either
between the LX and VDD pins or, for split supply applications,
between the LX pin and a higher voltage supply (shown as V
IN
in the Block Diagram). An external MOSFET has to be driven
by the switch oscillator to generate a high voltage. The switch-
ing frequency for this MOSFET is set by an external resistor
connected between the RSW-Osc pin and the supply pin VDD.
During operation, the external switching MOSFET turns on and
allows energy to be stored in the inductor; this energy is trans-
ferred into the capacitor C
S
when the MOSFET turns off. The
voltage at the CS pin will increase with every switching cycle.
Once the voltage at the CS pin reaches the desired regulation
limit, nominally 180V, the external switching MOSFET is turned
OFF to conserve power.
The C
S
capacitor is connected between the CS pin and ground;
the CS pin is internally connected to the H-bridge. Energy from
the boost converter stage is stored in the capacitor before being
transferred to the EL lamp. Depending on the EL lamp sizes, a
1.0nF to 15nF capacitor should be used for C
S
.
The EL lamp switching frequency can be in the range of 100Hz
to 1.0kHz. This frequency can be set by either an external
logic signal at the SEL pin, with a frequency that is 4 times the
desired EL lamp switching frequency, or by an external resis-
tor connected between the REL-Osc and VDD pins. If external
frequency is input to the device at the SEL pin, the REL-Osc
pin should be connected to ground.
The HV816 has the provision to control the discharge rate of
the output to minimize audible noise emitted by the EL lamp,
which is connected between the VA and VB pins. An external
resistor from the RSLEW-OUT pin to ground controls the VA,
VB output discharge rate.
EL lamp dimming can be accomplished by changing the input
voltage to the VREG pin. The VREG pin allows an external
voltage source to control the V
CS
amplitude. The V
CS
voltage is
approximately 143 times the voltage at the VREG pin.
►
Laptop keyboards
►
Netbook keyboards
►
Display signs
►
Portable instrumentation equipment
►
Electronic organizers
Applications
General Description
The Supertex HV816 is a high voltage Electroluminescent
(EL) lamp driver designed for driving a lamp capacitance of
up to 150nF, or an area of approximately 42 square inches.
It is comprised of a boost converter followed by an H-bridge.
The boost converter produces a regulated output voltage,
which is set at a nominal value of 180V using an internal refer-
ence voltage. The H-bridge is used to produce a differential
output drive and the EL lamp will therefore see ±180V (360V
peak-to-peak). The HV816 has two internal oscillators, one
for controlling the boost converter switching frequency and
the other for controlling the H-bridge switching frequency.
Having separate control of each switching frequency allows
flexibility in the circuit design.
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
HV816
Fig. 1 : Typical Application Circuit
V
IN
C
IN
47µF
C
G
0.1µF
Vishay
Si7820DN
R
REG
= 3.3M
L
X
= 22µH
(Cooper DR1030-220-R)
ES1D
C
S
12nF
200V
VREG
V
DD
C
DD
47µF
C
SW
100nF
C
FEL
100nF
R
EL
= 1.0M
VOUT VDRIVE LX
GATE
VDD
REL-Osc
CS
VA
HV816
R
SW
= 1.0M
VB
EN
C
EL
80nF
ON = 1.5V to V
DD
RSW-Osc
OFF = 0V to 0.2V
R
SLEW
= 100k
RSLEW-OUT
GND
HVGND
SEL
Block Diagram
V
IN
V
DD
C
DD
Device
Enable
VDD
C
IN
L
X
D
C
S
C
G
LX VDRIVE
GATE
7V Linear
Regulator
V
CS
PWM Switch
Oscillator
0 to 88%
+
-
CS
Input Logic Control:
ON = 1.5V to V
DD
OFF = 0 to 0.2V
EN
R
SW
RSW-Osc
VA
V
SENSE
1.26V
V
REF
2x EL
Frequency
VB
EL
Frequency
Output
Drivers
VREG
R
REG
VOUT
External EL
Frequency Control
R
EL
REL-Osc
SEL
RSLEW-OUT
R
SLEW
GND
HVGND
60pF
EL
Lamp
V
CS
HV816
Tel: 408-222-8888
www.supertex.com
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
2
HV816
Ordering Information
Package Options
Device
4.00x4.00mm body
1.00mm height (max)
0.65mm pitch
16-Lead QFN
16-Lead SOW w/ Heat Slug
10.30x7.50mm body
2.64mm height (max)
1.27mm pitch
HV816
HV816K6-G
HV816SG-G
-G indicates package is RoHS compliant (‘Green’)
ESD Sensitive Device
Absolute Maximum Ratings
Parameter
Supply voltage, V
DD
Output voltage, V
CS
Junction temperature
Storage temperature
Power dissipation:
16-Lead QFN
16-Lead SOW w/ Heat Slug
Value
-0.5 to +7.0V
-0.5 to +215V
+125°C
-65°C to +150°C
1.6W
2.5W
Pin Configurations
LX
16
RSW-Osc
1
CS
GATE
VDRIVE HVGND
REL-Osc
VA
SEL
VB
VREG
EN
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
VOUT
VDD
GND RSLEW-OUT
Product Markings
Y = Last Digit of Year Sealed
W = Code for Week Sealed
L = Lot Number
= “Green” Packaging
Package may or may not include the following marks: Si or
(top view)
Center heat slug is at ground potential.
Pads are at the bottom of the package.
16-Lead QFN (K6)
H816
YWLL
1
GATE
LX
RSW-Osc
REL-Osc
SEL
VREG
VOUT
VDD
16
VDRIVE
HVGND
CS
VA
VB
EN
RSLEW-OUT
GND
16-Lead QFN (K6)
Top Marking
LLLLLLLLLL
HV 8 1 6S G
YYW W AA A
Bottom Marking
CCCCCCCCCCC
YY = Year Sealed
WW = Week Sealed
A = Assembler ID
L = Lot Number
C = Country of Origin*
= “Green” Packaging
*May be part of top marking
Package may or may not include the following marks: Si or
16-Lead SOW w/ Heat Slug (SG)
(top view)
Center heat slug is at ground potential.
16-Lead SOW w/ Heat Slug (SG)
Recommended Operating Conditions
Sym
V
DD
f
SW
f
EL
S
EL
R
SLEW
C
EL
T
j
Parameter
Supply voltage
Switching frequency
EL output frequency
Input for EL output frequency
Output discharge slew rate control resistor
EL lamp load capacitance
Operating temperature
Min
2.7
50
100
400
100
0
-40
Typ
-
-
-
-
-
-
-
Max
5.5
200
1000
4000
500
150
+85
Units
V
kHz
Hz
Hz
kΩ
nF
O
Conditions
---
---
---
SEL = 4* (f
EL
) and 50% duty cycle
---
---
---
www.supertex.com
C
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
3
Tel: 408-222-8888
HV816
Electrical Characteristics
Sym
V
CS
V
LAMP
I
DDQ
I
DD
I
IN-LOAD
I
IN-NOLOAD
I
INQ
V
REG
f
EL
f
SW
D
V
IH
V
IL
I
LOGIC
V
GATE
t
GATE-RISE
t
GATE-FALL
t
VA-FALL
t
VB-FALL
R
ON
or
Parameter
Output regulation voltage
Differential output voltage
Quiescent V
DD
supply current
Input current going into the VDD pin
Input current including inductor current
with load
Input current including inductor current
without load
Quiescent V
IN
(inductor input voltage)
supply current
External input voltage range
EL lamp frequency
External MOSFET switching frequency
External MOSFET duty cycle
EN, SEL logic pins input high level
EN, SEL logic pins input low level
EN, SEL logic pins high current
External MOSFET gate voltage
External MOSFET gate voltage rise
time
External MOSFET gate voltage fall time
DC Characteristics
(Over recommended operating conditions unless otherwise specified
Min
160
320
-
-
-
-
-
0
-
-
-
1.5
0
-1.0
-
-
-
Typ
180
360
-
-
-
-
-
-
200
90
-
-
-
-
7.0
100
-
Max
200
400
2.0
3.0
380
80
10
1.33
-
-
88
V
DD
0.2
1.0
-
200
20
- T
J
= 25°C)
Units Conditions
V
V
µA
mA
mA
mA
µA
V
Hz
kHz
%
V
V
µA
V
ns
ns
V
DD
= 2.7 to 5.5V
V
DD
= 2.7 to 5.5V
V
DD
= 5.5V, EN = Low
V
DD
= 2.7 to 5.5V, V
IN
= 5.0V,
C
EL
= 80nF, see Fig. 1
V
DD
= 5.5V, V
IN
= 5.0V,
R
EL
= 1.0MΩ, R
SW
= 1.0MΩ,
see Fig. 1
V
DD
= 2.7 to 5.5V, V
IN
= 5.0V
No Load, see Fig. 1
V
IN
= 10V, EN = Low,
see Fig. 1
V
DD
= 2.7 to 5.5V
R
EL
= 1.0MΩ
R
SW
= 1.0MΩ
---
V
DD
= 2.7 to 5.5V
V
DD
= 2.7 to 5.5V
V
DD
= 2.7 to 5.5V
V
DD
= 2.7 to 5.5V
V
DD
= 2.7 to 5.5V,
C
LOAD
= 500pF
V
DD
= 2.7 to 5.5V,
C
LOAD
= 500pF
C
EL
= 150nF, V
CS
= 180V,
R
SLEW
= 100kΩ
Guaranteed by design.
Output fall time
On-resistance of internal n-channel
MOSFET at LX pin
-
180
-
µs
-
-
30
Ω
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
4
Tel: 408-222-8888
www.supertex.com
HV816
Pin Configuration and External Component Description
Pin #
K6-G SG-G
Pin Name
Description
External resistor, R
SW
, from the RSW-Osc to VDD pins sets the switch converter frequency. The switch
converter frequency is inversely proportional to the external R
SW
resistor value. Reducing the resistor
value by a factor of two will result in increasing the switch converter frequency by two. A C
SW
capacitor
is recommended from RSW-Osc to the VDD pin to shunt any switching noise that may couple into the
RSW-Osc pin. A C
SW
capacitor with a value of 100nF is typically recommended.
External resistor, R
EL
, from the REL-Osc to VDD pins sets the EL frequency. The EL frequency is
inversely proportional to the external R
EL
resistor value. Reducing the resistor value by a factor of two
will result in increasing the EL frequency by two. The SEL pin should be connected to ground if the
R
EL
resistor is used to set the EL frequency. A C
FEL
capacitor is recommended from the REL-Osc to
VDD pins to shunt any switching noise that may couple into the REL-Osc pin. A C
FEL
capacitor with a
value of 100nF is typically recommended.
External logic signal input to set the EL frequency. The REL-Osc pin should be connected to ground
to use this pin. The output EL frequency is ¼ of the frequency input at this pin. This pin if not used,
should be connected to ground. Input logic high is 1.5V to V
DD
. Input logic low is 0 to 0.2V.
Input voltage to set V
CS
regulation voltage. This pin allows an external voltage source to control the
V
CS
amplitude. The V
CS
voltage = (143 ± 5%) x V
REG
. An external resistor, R
REG
, connected between
the VREG and VOUT pins controls the V
CS
charging rate. The charging rate is inversely proportional
to the R
REG
resistor value.
Switched internal reference voltage.
Device low voltage input supply pin.
Device ground.
1
3
RSW-Osc
2
4
REL-Osc
3
5
SEL
4
5
6
7
6
7
8
9
VREG
VOUT
VDD
GND
8
10
An external resistor, R
SLEW
, from this pin to ground controls the slew rate of VA and VB output dis-
charge. The output discharge slew rate is inversely proportional to the R
SLEW
resistor value. The VA,
RSLEW-OUT VB output discharge time is given by the equation
(R
SLEW
x C
EL
) sec
t
VA-fall
or t
VB-fall
=
43.73
EN
VA, VB
CS
HVGND
VDRIVE
Enable logic pin to turn the device ON/OFF. Input logic high is 1.5V to V
DD
. Input logic low is 0 to
0.2V.
Lamp connections. The polarity is irrelevant. The EL load capacitance is up to 150nF.
High voltage regulated output. Connection for an external high voltage capacitor to ground. A 0.001µF
to 0.015µF 200V capacitor can be used to store the energy transferred from the inductor.
High Voltage Ground. Connect it to device ground
Drive voltage for the Gate voltage and also internal regulated voltage for the output drivers. An exter-
nal capacitor (C
G
) is required at this pin to ground.
Gate control pin for the switching MOSFET. Connection for an external MOSFET. The external
MOSFET is used to boost the low input voltage by inductive flyback. When the MOSFET is ON, the
inductor is being charged. When the MOSFET is OFF, the charge stored in the inductor will be trans-
ferred to the high voltage capacitor C
S
. The energy stored in the capacitor is transferred to the internal
H-bridge, and therefore to the EL lamp. In general, low R
ON
MOSFET’s, which can handle more cur-
rent, are more suitable to drive larger size lamps. Also, a small value inductor should be used. But
as the R
ON
value and the inductor value decrease, the switching frequency of the inductor (controlled
by R
SW
) should be increased to avoid inductor saturation. The inductor input voltage (V
IN
) is recom-
mended to be minimum 4.5V to get the 180V output regulation voltage with 150nF EL load.
Drain of the internal N-channel MOSFET. The internal MOSFET is used to generate the GATE pin
voltage at startup.
9
10,11
12
13
14
11
12, 13
14
15
16
15
1
GATE
16
2
LX
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
5
Tel: 408-222-8888
www.supertex.com
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