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2SD2215P

产品描述Power Bipolar Transistor, 0.75A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3
产品类别分立半导体    晶体管   
文件大小168KB,共3页
制造商Panasonic(松下)
官网地址http://www.panasonic.co.jp/semicon/e-index.html
下载文档 详细参数 选型对比 全文预览

2SD2215P概述

Power Bipolar Transistor, 0.75A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3

2SD2215P规格参数

参数名称属性值
包装说明IN-LINE, R-PSIP-T3
针数3
Reach Compliance Codeunknow
ECCN代码EAR99
最大集电极电流 (IC)0.75 A
集电极-发射极最大电压250 V
配置SINGLE
最小直流电流增益 (hFE)120
JESD-30 代码R-PSIP-T3
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式IN-LINE
极性/信道类型NPN
最大功率耗散 (Abs)15 W
认证状态Not Qualified
表面贴装NO
端子形式THROUGH-HOLE
端子位置SINGLE
晶体管应用AMPLIFIER
晶体管元件材料SILICON
标称过渡频率 (fT)30 MHz
Base Number Matches1

文档预览

下载PDF文档
Power Transistors
2SD2215, 2SD2215A
Silicon NPN triple diffusion planar type
Unit: mm
For power amplification
7.0±0.3
3.0±0.2
3.5±0.2
s
Features
q
q
M
Di ain
sc te
on na
tin nc
ue e/
d
s
Absolute Maximum Ratings
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
Collector to
2SD2215
10.0
–0.
High collector to base voltage V
CBO
I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
(T
C
=25˚C)
7.2±0.3
0.8±0.2
1.1±0.1
1.0±0.2
+0.3
0.85±0.1
0.4±0.1
0.75±0.1
2.3±0.2
4.6±0.4
2
Ratings
350
400
250
300
5
Unit
V
1
3
base voltage
Collector to
2SD2215A
2SD2215
1:Base
2:Collector
3:Emitter
I Type Package
Unit: mm
0 to 0.15
emitter voltage 2SD2215A
Emitter to base voltage
Peak collector current
Collector current
ea
s
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tp is
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/s bo
em u
ic t la
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/e st
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de for
x. ma
ht t
m ion
l
.
V
V
A
A
2.0±0.2
3.0±0.2
7.0±0.3
3.5±0.2
10.2±0.3
7.2±0.3
1.5
1.0 max.
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
P
C
T
j
15
2.5
1.3
W
0.75±0.1
0.5 max.
0.9±0.1
1.1±0.1
0 to 0.15
150
˚C
˚C
1
2
3
T
stg
–55 to +150
2.3±0.2
s
Electrical Characteristics
Parameter
Collector cutoff
current
2SD2215
4.6±0.4
(T
C
=25˚C)
Symbol
1:Base
2:Collector
3:Emitter
I Type Package (Y)
Conditions
min
typ
max
1
1.0
0.75
Unit
mA
2SD2215A
2SD2215
I
CES
V
CE
= 350V, V
BE
= 0
V
CE
= 400V, V
BE
= 0
V
CE
= 150V, I
B
= 0
1
1
1
1
Collector cutoff
current
2SD2215A
I
CEO
I
EBO
V
CE
= 200V, I
B
= 0
V
EB
= 5V, I
C
= 0
mA
mA
V
Emitter cutoff current
Collector to emitter
voltage
2SD2215
2SD2215A
V
CEO
h
FE1*
h
FE2
V
BE
I
C
= 30mA, I
B
= 0
250
300
70
10
Pl
Forward current transfer ratio
Base to emitter voltage
V
CE
= 10V, I
C
= 0.3A
V
CE
= 10V, I
C
= 1A
V
CE
= 10V, I
C
= 1A
I
C
= 1A, I
B
= 0.2A
250
1.5
1
30
0.5
2
0.5
V
V
MHz
µs
µs
µs
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
FE1
V
CE(sat)
f
T
t
on
t
stg
t
f
V
CE
= 5V, I
C
= 0.5A, f = 10MHz
I
C
= 1A, I
B1
= 0.1A, I
B2
= – 0.1A,
V
CC
= 50V
Rank classification
Q
70 to 150
P
120 to 250
Rank
h
FE1
2.5±0.2
2.5±0.2
1.0
1

2SD2215P相似产品对比

2SD2215P 2SD2215AP 2SD2215AQ 2SD2215AQ(Y) 2SD2215P(Y) 2SD2215Q 2SD2215Q(Y) 2SD2215AP(Y)
描述 Power Bipolar Transistor, 0.75A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3 Power Bipolar Transistor, 0.75A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3 Power Bipolar Transistor, 0.75A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3 Transistor Transistor Power Bipolar Transistor, 0.75A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3 Transistor Transistor
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow unknow
Base Number Matches 1 1 1 1 1 1 1 1

 
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