Transistors
2SC3930
Silicon NPN epitaxial planar type
(0.425)
For high-frequency amplification
Complementary to 2SA1532
■
Features
•
Optimum for RF amplification of FM/AM radios
•
High transition frequency f
T
•
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
Unit: mm
0.15
+0.10
–0.05
0.3
+0.1
–0.0
3
1.25
±0.10
2.1
±0.1
5˚
1
2
0.2
±0.1
0 to 0.1
0.9
±0.1
0.9
+0.2
–0.1
(0.65) (0.65)
1.3
±0.1
2.0
±0.2
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
30
20
5
30
150
150
−55
to
+150
Unit
V
V
V
mA
mW
°C
°C
10˚
1: Base
2: Emitter
3:Collector
EIAJ: SC-70
SMini3-G1 Package
Marking Symbol: V
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*
Transition frequency
Noise figure
Reverse transfer impedance
Reverse transfer capacitance
(Common emitter)
2. *: Rank classification
Rank
h
FE
B
70 to 140
C
110 to 220
Symbol
I
CBO
h
FE
f
T
NF
Z
rb
C
re
Conditions
V
CB
=
10 V, I
E
=
0
V
CB
=
10 V, I
E
= −1
mA
V
CB
=
10 V, I
E
= −1
mA, f
=
200 MHz
V
CB
=
10 V, I
E
= −1
mA, f
=
5 MHz
V
CB
=
10 V, I
E
= −1
mA, f
=
2 MHz
V
CB
=
10 V, I
E
= −1
mA, f
=
10.7 MHz
70
150
250
2.8
22
0.9
4.0
50
1.5
Min
Typ
Max
0.1
220
Unit
µA
MHz
dB
Ω
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2003
SJC00141BED
1
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•
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