2SK2113
GaAs HEMT
Application
UHF low noise amplifier
CMPAK–4
4
3
2
1
1. Source
2. Drain
3. Source
4. Gate
Features
• HEMT structure
• Excellent low noise characteristics
NF=0.8dB typ (f=900MHz)
• High gain
Ga=18dB typ (f=900MHz)
• Small package (CMPAK-4)
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Gate to drain voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
GSO
V
GDO
I
D
Pch
Tch
Tstg
Ratings
3.5
–3
–3
60
100
125
–55 to +125
Unit
V
V
V
mA
mW
°C
°C
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2SK2113
Table 2 Electrical Characteristics
(Ta = 25°C)
Item
Gate to source leakage
current
Drain current
Symbol
I
GSS
I
DSS
V
GS(off)
|y
fs
|
NF
PG
Min
—
Typ
—
Max
-10
Unit
µA
Test conditions
V
DS
= 0V, V
GS
= -3V
V
DS
= 2V, V
GS
= 0
(Pulse Test)
V
DS
= 2 V, I
D
= 100µA
V
DS
= 2 V, I
D
= 10mA
f=1kHz
V
DS
= 2 V, I
D
= 10mA
f=900MHz
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12
—
60
mA
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Gate to source cutoff voltage
Forward transfer admittance
-0.3
30
—
50
-2.5
—
V
mS
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Noise figure
Power gain
—
15.5
0.8
18
1.2
—
dB
dB
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