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2SK970

产品描述Power Field-Effect Transistor, 10A I(D), 60V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
产品类别分立半导体    晶体管   
文件大小6MB,共1147页
制造商Hitachi (Renesas )
官网地址http://www.renesas.com/eng/
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2SK970概述

Power Field-Effect Transistor, 10A I(D), 60V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

2SK970规格参数

参数名称属性值
是否Rohs认证不符合
包装说明FLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
ECCN代码EAR99
配置SINGLE
最小漏源击穿电压60 V
最大漏极电流 (Abs) (ID)10 A
最大漏极电流 (ID)10 A
最大漏源导通电阻0.22 Ω
FET 技术METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码TO-220AB
JESD-30 代码R-PSFM-T3
湿度敏感等级1
元件数量1
端子数量3
工作模式ENHANCEMENT MODE
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)225
极性/信道类型N-CHANNEL
最大功率耗散 (Abs)30 W
认证状态Not Qualified
表面贴装NO
端子形式THROUGH-HOLE
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用SWITCHING
晶体管元件材料SILICON
Base Number Matches1

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CONTENTS
s
Index...................................................................................................................................................
s
General Information..........................................................................................................................
Section 1 Lineup by Application........................................................................................................
1.1
1.2
1.3
1.4
1.5
1.6
Power Supply Use ..................................................................................................................
Motor Drive Use......................................................................................................................
Servo Motor/Inverter Application ............................................................................................
Automotive Use ......................................................................................................................
Lamp Inverter Application.......................................................................................................
CRT Display Use ....................................................................................................................
4
11
13
13
26
31
33
36
37
39
39
41
43
44
50
53
54
57
58
Section 2 Series Lineup ....................................................................................................................
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
D Series Lineup......................................................................................................................
S Series Lineup ......................................................................................................................
Power MOS FET DII Series....................................................................................................
Power MOS FET DIII Series...................................................................................................
Power MOS FET DIV Series ..................................................................................................
Power MOS FET DV Series....................................................................................................
Power MOS FET Array Series................................................................................................
Power MOS FET Modules ......................................................................................................
Line-up of Each Package Outline for Same Die .....................................................................
Section 6 Standard Lead Forming Specification............................................................................... 144
Section 7 Package Information ......................................................................................................... 149
1

 
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