INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
2SD1416
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 80V(Min)
·Collector-Emitter
Saturation Voltage-
: V
CE(sat)
= 1.5V(Max) @I
C
= 3A
·High
DC Current Gain
: h
FE
= 2000(Min) @ I
C
= 3A, V
CE
= 3V
·Complement
to Type 2SB1021
APPLICATIONS
·Hammer
driver,pulse motor drive applications.
·High
power switching applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
w
.cn
i
em
cs
.is
w
w
VALUE
UNIT
80
V
80
V
5
V
7
A
0.2
A
30
W
I
C
Collector Current-Continuous
I
B
B
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
P
C
T
J
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SD1416
TYP.
MAX
UNIT
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 50mA; I
B
= 0
80
V
V
CE(
sat
)-1
Collector-Emitter Saturation Voltage
I
C
= 3A; I
B
= 6mA
B
1.5
V
V
CE(
sat
)-2
Collector-Emitter Saturation Voltage
I
C
= 7A; I
B
= 14mA
B
2.0
V
V
BE(
sat
)
I
CBO
Base-Emitter Saturation Voltage
I
C
= 3A; I
B
= 6mA
B
2.5
V
μA
Collector Cutoff Current
V
CB
= 80V; I
E
= 0
100
I
EBO
Emitter Cutoff Current
h
FE -1
DC Current Gain
h
FE -2
DC Current Gain
Switching times
t
on
Turn-on Time
t
stg
Storage Time
w
.cn
i
em
cs
.is
w
w
V
EB
= 5V; I
C
= 0
I
C
= 3A; V
CE
= 3V
2000
I
C
= 7A; V
CE
= 3V
1000
I
B1
= -I
B2
= 6mA
R
L
= 15Ω; V
CC
= 45V
P
W
=20μs; Duty Cycle≤1%
3.0
mA
15000
0.8
μs
3.0
μs
t
f
Fall Time
2.5
μs
isc Website：www.iscsemi.cn
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