2SK210
TOSHIBA Field Effect Transistor
Silicon N Channel Junction Type
2SK210
FM Tuner Applications
VHF Band Amplifier Applications
•
•
•
High power gain: G
PS
= 24dB (typ.) (f = 100 MHz)
Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz)
High forward transfer admittance: |Y
fs
| = 7 mS (typ.) (f = 1 kHz)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Symbol
V
GDO
I
G
P
D
T
j
T
stg
Rating
−18
10
100
125
−55~125
Unit
V
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
―
temperature/current/voltage and the significant change in
JEITA
SC-59
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-3F1C
operating temperature/current/voltage, etc.) are within the
Weight: 0.012 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate leakage current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Power gain
Noise figure
Symbol
I
GSS
V
(BR) GDO
I
DSS
(Note)
V
GS (OFF)
⎪Y
fs
⎪
C
iss
C
rss
G
PS
NF
Test Condition
V
GS
= −1.0
V, V
DS
=
0 V
I
G
= −100 μA
V
GS
=
0 V, V
DS
=
10 V
V
DS
=
10 V, I
D
=
1
μA
V
GS
=
0 V, V
DS
=
10 V, f
=
1 kHz
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
V
GD
= −10
V, f
=
1 MHz
V
DD
=
10 V, f
=
100 MHz (Figure 1)
V
DD
=
10 V, f
=
100 MHz (Figure 1)
Min
⎯
−18
3
−1.2
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
−3
7
3.5
⎯
24
1.8
Max
−10
⎯
24
⎯
⎯
⎯
0.65
⎯
3.5
Unit
nA
V
mA
V
mS
pF
pF
dB
dB
Note: I
DSS
classificatopn Y: 3.0~7.0 mA, GR (R): 6.0~14.0 mA, BL (L): 12.0~24.0 mA
1
2007-11-01
2SK210
L
1
: 0.8 mmφ A
g
plated Cu wire 3 turns, 10 mm ID, 10 mm length
L
2
: 0.8 mmφ A
g
plated Cu wire 3.5 turns, 10 mm ID, 10 mm length
Figure 1 100 MHz G
ps
NF Test Circuit
Marking
2
2007-11-01
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