AP80T10GR-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Low On-resistance
▼
Fast Switching Characteristic
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
100V
9.5mΩ
85A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-262 package is widely preferred for commercial-industrial
through-hole applications and suited for low voltage applications such
as DC/DC converters.
G
D
S
TO-262(R)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Chip)
.
Rating
100
+20
85
3
Units
V
V
A
A
A
A
W
℃
℃
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
80
60
300
166
-55 to 175
-55 to 175
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
0.9
62
Units
℃/W
℃/W
1
201008171
Data and specifications subject to change without notice
AP80T10GR-HF
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=40A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=40A
V
DS
=80V, V
GS
=0V
V
GS
= +20V, V
DS
=0V
I
D
=40A
V
DS
=80V
V
GS
=10V
V
DS
=50V
I
D
=30A
R
G
=1Ω,V
GS
=10V
R
D
=1.66Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Min.
100
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
75
-
-
115
30
48
21
58
41
15
550
300
Max. Units
-
9.5
5
-
25
+100
180
-
-
-
-
-
-
-
-
V
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
o
6000 9600
.
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
2
Test Conditions
I
S
=40A, V
GS
=0V
I
S
=10A, V
GS
=0V
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
75
230
Max. Units
1.3
-
-
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 80A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP80T10GR-HF
250
160
T
C
= 25 C
200
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10V
9.0V
8.0V
7.0V
o
T
C
= 1 75 C
120
10V
9.0V
8.0V
7.0V
V
G
= 6.0V
150
V
G
= 6.0V
100
80
40
50
0
0
4
8
12
16
20
0
0
2
4
6
8
10
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
2.8
2.4
I
D
=40A
V
G
=10V
Normalized BV
DSS
(V)
Normalized R
DS(ON)
1.1
2.0
1
1.6
.
1.2
0.9
0.8
0.8
-50
0
50
100
150
200
0.4
-50
0
50
100
150
200
T
j
, Junction Temperature ( C)
o
T
j
, Junction Temperature ( C)
o
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
40
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
1.2
30
Normalized V
GS(th)
(V)
1.2
1.4
1
I
S
(A)
20
0.8
T
j
=175
o
C
T
j
=25
o
C
0.6
10
0.4
0
0
0.2
0.4
0.6
0.8
1
0.2
-50
0
50
100
150
200
V
SD
, Source-to-Drain Voltage (V)
T
j
,Junction Temperature (
o
C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP80T10GR-HF
f=1.0MHz
12
10000
I
D
= 40 A
10
V
GS
, Gate to Source Voltage (V)
8000
8
V
DS
= 50 V
V
DS
= 60 V
V
DS
= 80 V
C (pF)
6000
C
iss
6
4000
4
2000
2
0
0
40
80
120
160
0
1
5
9
13
17
21
25
C
oss
C
rss
29
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
Operation in this
area limited by
R
DS(ON)
100
0.2
I
D
(A)
0.1
100us
1ms
10
.
0.1
0.05
0.02
0.01
P
DM
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
10ms
T
c
=25 C
Single Pulse
1
0.1
1
10
100
o
Single Pulse
100ms
DC
1000
0.01
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
