INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC3902
DESCRIPTION
·High
Collector-Emitter Breakdown Voltage-
: V
(BR)CEO
= 160V(Min)
·Large
Current Capacity
·Complement
to Type 2SA1507
APPLICATIONS
·Color
TV audio output, converters, inverters.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
180
V
V
CEO
Collector-Emitter Voltage
160
V
V
EBO
Emitter-Base Voltage
6
V
I
C
Collector Current-Continuous
1.5
A
I
CM
Collector Current-Peak
Collector Power Dissipation
@ T
C
=25℃
2.5
A
10
W
P
C
Collector Power Dissipation
@ T
a
=25℃
T
J
Junction Temperature
1.5
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SC3902
TYP.
MAX
UNIT
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 10μA; I
E
= 0
I
C
= 1mA; R
BE
= ∞
180
V
V
(BR)CEO
Collector-Emitter Breakdown Voltage
160
V
V
(BR)EBO
Emitter-Base Breakdown Vltage
I
E
= 10μA; I
C
= 0
6
V
V
CE(
sat
)
V
BE(
sat
)
I
CBO
Collector-Emitter Saturation Voltage
I
C
= 500mA; I
B
= 50mA
I
C
= 500mA; I
B
= 50mA
V
CB
= 120V; I
E
= 0
V
EB
= 4V; I
C
= 0
0.45
V
Base-Emitter Saturation Voltage
1.2
V
μA
μA
Collector Cutoff Current
0.1
I
EBO
Emitter Cutoff Current
0.1
h
FE
DC Current Gain
I
C
= 10mA; V
CE
= 5V
100
400
f
T
Current-Gain—Bandwidth Product
I
C
= 50mA; V
CE
= 10V
120
MHz
C
OB
Output Capacitance
I
E
= 0; V
CB
= 10V, f
test
= 1MHz
14
pF
Switching Times
μs
μs
μs
t
on
t
stg
t
f
Turn-on Time
I
C
= 0.7A, I
B1
= -I
B2
= 70mA
R
L
= 14.3Ω; V
CC
= 100V
0.04
Storage Time
1.2
Fall Time
0.08
h
FE
Classifications
R
100-200
S
140-280
T
200-400
isc Website：www.iscsemi.cn
2
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