Datasheet> 器件分类 > 分立半导体> 晶体管> 2SC5410A

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2SC5410A: 产品描述Power Bipolar Transistor, 25A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TOP3L, 3 PIN; 产品类别分立半导体晶体管; 文件大小36KB，共2页; 制造商Panasonic(松下); 官网地址http://www.panasonic.co.jp/semicon/e-index.html

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2SC5410A概述

Power Bipolar Transistor, 25A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TOP3L, 3 PIN

2SC5410A规格参数

参数名称	属性值
零件包装代码	TO-3L
包装说明	TOP3L, 3 PIN
针数	3
Reach Compliance Code	unknow
其他特性	HIGH RELIABILITY
最大集电极电流 (IC)	25 A
集电极-发射极最大电压	600 V
配置	SINGLE
最小直流电流增益 (hFE)	8
JESD-30 代码	R-PSFM-T3
元件数量	1
端子数量	3
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
极性/信道类型	NPN
认证状态	Not Qualified
表面贴装	NO
端子形式	THROUGH-HOLE
端子位置	SINGLE
晶体管应用	SWITCHING
晶体管元件材料	SILICON
标称过渡频率 (fT)	3 MHz
Base Number Matches	1

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Power Transistors

2SC5410, 2SC5410A

Silicon NPN triple diffusion mesa type

For horizontal deflection output

20.0±0.5

Unit: mm

3.3±0.2

5.0±0.3

3.0

6.0

Features

1.5

20.0±0.5

2.5

Solder Dip

Absolute Maximum Ratings

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Base current

Collector power T

=25°C

dissipation

Ta=25°C

Junction temperature

Storage temperature

Symbol

CBO

CES

CEO

EBO

stg

=25˚C)

Ratings

1500

600

200

3.5

150

–55 to +150

Unit

˚C

2.0±0.3

3.0±0.3

1.0±0.2

2.7±0.3

0.6±0.2

5.45±0.3

10.9±0.5

1:Base

2:Collector

3:Emitter

TOP–3L Package

Electrical Characteristics

Parameter

Collector cutoff

current

Emitter cutoff current

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Storage time

Fall time

2SC5410

2SC5410A

=25˚C)

Symbol

CBO

EBO

CE(sat)

BE(sat)

stg

Conditions

= 1000V, I

= 0

= 1500V, I

= 0

= 5V, I

= 0

= 5V, I

= 12A

= 12A, I

= 3A

= 12A, I

= 3A

= 10V, I

= 0.1A, f = 0.5MHz

= 12A, I

= 3A, I

= –6A

4.0

0.3

min

typ

max

1.5

MHz

µs

Unit

µA

2.0

1.5

High breakdown voltage, and high reliability through the use of a

glass passivation layer

High-speed switching

Wide area of safe operation (ASO)

26.0±0.5

10.0

2.0

4.0

3.0

2SC5410A相似产品对比

	2SC5410A	2SC5410
描述	Power Bipolar Transistor, 25A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TOP3L, 3 PIN	Power Bipolar Transistor, 25A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TOP3L, 3 PIN
零件包装代码	TO-3L	TO-3L
包装说明	TOP3L, 3 PIN	TOP3L, 3 PIN
针数	3	3
Reach Compliance Code	unknow	unknow
其他特性	HIGH RELIABILITY	HIGH RELIABILITY
最大集电极电流 (IC)	25 A	25 A
集电极-发射极最大电压	600 V	600 V
配置	SINGLE	SINGLE
最小直流电流增益 (hFE)	8	8
JESD-30 代码	R-PSFM-T3	R-PSFM-T3
元件数量	1	1
端子数量	3	3
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT
极性/信道类型	NPN	NPN
认证状态	Not Qualified	Not Qualified
表面贴装	NO	NO
端子形式	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE
晶体管应用	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON
标称过渡频率 (fT)	3 MHz	3 MHz
Base Number Matches	1	1

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