INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SD1378
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 80V(Min)
·Low
Saturation Voltage -
: V
CE(sat)
= 0.4V(Max)@ I
C
=
0.5A
·Complement
to Type 2SB1007
APPLICATIONS
·Designed
for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current-Continuous
Collector Power Dissipation
@ T
a
=25℃
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VALUE
UNIT
80
V
80
V
5
V
0.7
A
1.2
W
10
150
℃
P
C
Collector Power Dissipation
@ T
C
=25℃
T
J
Junction Temperature
T
stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SD1378
TYP.
MAX
UNIT
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 50μA; I
E
= 0
80
V
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 2mA; I
B
= 0
B
80
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 50μA; I
C
= 0
5
V
V
CE(
sat
)
I
CBO
Collector-Emitter Saturation Voltage
I
C
= 0.5A; I
B
= 50mA
0.4
V
μA
Collector Cutoff Current
V
CB
= 50V; I
E
= 0
0.5
I
EBO
Emitter Cutoff Current
h
FE
DC Current Gain
f
T
Current-Gain—Bandwidth Product
C
OB
Output Capacitance
h
FE
Classifications
P
82-180
Q
120-270
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V
EB
= 4V; I
C
= 0
I
C
= 0.1A; V
CE
= 3V
82
I
E
= 50mA; V
CE
= 10V
I
E
= 0; V
CB
= 10V, f
test
= 1MHz
0.5
μA
390
120
MHz
10
pF
180-390
isc Website：www.iscsemi.cn
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