Ordering number : EN2060B
2SB1142 / 2SD1682
SANYO Semiconductors
DATA SHEET
PNP / NPN Epitaxial Planar Silicon Transistors
2SB1142 / 2SD1682
Applications
•
50V / 2.5A High-Speed
Switching Applications
Power supplies, relay drivers, lamp drivers.
Features
•
•
•
Adoption of FBET and MBIT processes.
Low saturation voltage.
Large current capacity and wide ASO.
Specifications
( ) : 2SB1142
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
(--)60
(--)50
(-
-)6
(--)2.5
(--)5.0
1.5
10
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE1
hFE2
Conditions
VCB=(--)50V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)2V, IC=(-
-)100mA
VCE=(--)2V, IC=(--)2A
(100)*
100*
35
Ratings
min
typ
max
(--)100
(--)100
(400)*
560*
Unit
nA
nA
Continued on next page.
*
: The 2SB1142 / 2SD1682 are classified by 100mA hFE as follows :
2SB1142
2SD1682
Rank
hFE
hFE
R
100 to 200
100 to 200
S
140 to 280
140 to 280
T
200 to 400
200 to 400
U
280 to 560
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1806EA IM TC-00000203 / O2303TN(KOTO) / 92098HA(KT) / D151MH,(KOTO) No.2060-1/5
2SB1142 / 2SD1682
Continued from preceding page.
Parameter
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitterr Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
VCE=(--)10V, IC=(--)50mA
VCB=(--)10V, f=1MHz
IC=(--)1A, IB=(--)50mA
IC=(--)1A, IB=(--)50mA
IC=(--)10µA, IE=0A
IC=(--)1mA, RBE=∞
IE=(-
-)10µA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
(--)60
(--)50
(--)6
(35)35
(350)550
(30)30
Ratings
min
typ
140
(25)16
(--250)110
(--)0.85
(--500)300
(--)1.2
max
Unit
MHz
pF
mV
V
V
V
V
ns
ns
ns
Package Dimensions
unit : mm (typ)
7516-002
Switching Time Test Circuit
IB1
OUTPUT
IB2
VR
50Ω
+
100µF
+
470µF
VCC=25V
RB
PW=20µs
D.C.≤1%
8.0
4.0
1.0
3.0
3. 6
1.0
3.3
INPUT
1.4
11.0
1.5
7.5
VBE= --5V
1.6
0.8
0.8
0.75
IC=10IB1= --10IB2=1A
For PNP, the polarity is reversed.
0.7
3.0
1
2
3
1.7
15.5
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
2.4
4.8
--2.0
IC -- VCE
2SB1142
mA
30
--
--25
mA
2.0
IC -- VCE
2SD1682
18m
A
--20m
A
1.6
Collector Current, IC -- A
Collector Current, IC -- A
--1.6
--15mA
14mA
mA
16
12mA
10mA
8mA
--10mA
--1.2
20
1.2
mA
6mA
--5mA
--0.8
0.8
4mA
--3mA
--2mA
--0.4
2mA
0.4
--1mA
0
0
--0.4
--0.8
--1.2
IB=0mA
--1.6
--2.0
ITR09031
0
0
0.4
0.8
1.2
IB=0mA
1.6
2.0
ITR09032
Collector-to-Emitter Voltage, VCE -- V
Collector-to-Emitter Voltage, VCE -- V
No.2060-2/5
2SB1142 / 2SD1682
--2.0
IC -- VCE
2SB1142
mA
--12
A
--10m
--8mA
2.0
IC -- VCE
2SD1682
10mA
9mA
8mA
7mA
6mA
--1.6
Collector Current, IC -- A
--1.2
--6mA
--4mA
Collector Current, IC -- A
1.6
1.2
5mA
4mA
0.8
--0.8
3mA
--2mA
--0.4
2mA
0.4
1mA
0
0
--4
--8
--12
IB=0mA
--16
--20
ITR09033
0
0
4
8
12
IB=0mA
16
20
ITR09034
Collector-to-Emitter Voltage, VCE -- V
--2.8
IC -- VBE
Collector-to-Emitter Voltage, VCE -- V
2.8
IC -- VBE
--2.4
2SB1142
VCE= --2V
Collector Current, IC -- A
2.4
2SD1682
VCE=2V
Collector Current, IC -- A
--2.0
2.0
--1.6
25
°
C
1.6
Ta=7
5
°
C
--1.2
--25
°
C
1.2
--0.8
0.8
--0.4
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
0.4
0
0
0.2
0.4
0.6
Ta=7
5
°
C
25
°
C
--25
°
C
0.8
1.0
1.2
ITR09036
Base-to-Emitter Voltage, VBE -- V
1000
7
5
ITR09035
1000
Base-to-Emitter Voltage, VBE -- V
hFE -- IC
hFE -- IC
2SD1682
VCE=2V
Ta=75°C
--25
°C
2SB1142
VCE= --2V
7
5
Ta=75°C
DC Current Gain, hFE
DC Current Gain, hFE
3
2
25°C
--25°C
3
2
25°C
100
7
5
3
2
100
7
5
3
2
10
7 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
5
10
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
Collector Current, IC -- A
5
ITR09037
100
7
f T -- IC
Collector Current, IC -- A
ITR09038
Cob -- VCB
Gain-Bandwidth Product, f T -- MHz
3
2
2SB1142 / 2SD1682
VCE=10V
Output Capacitance, Cob -- pF
2S
D1
2SB1142 / 2SD1682
f=1MHz
5
100
7
5
3
2
2S
B
68
2
3
2
2SB
11
42
114
2
2SD
168
2
10
7
5
10
For PNP, minus sign is omitted.
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
3
7
ITR09039
For PNP, minus sign is omitted.
1.0
2
3
5
7
10
2
3
5
7
Collector Current, IC -- A
Collector-to-Base Voltage, VCB -- V
ITR09040
No.2060-3/5
2SB1142 / 2SD1682
5
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
2SB1142
IC / IB=20
5
3
2
1000
7
5
3
2
100
7
5
3
2
10
VCE(sat) -- IC
2SD1682
IC / IB=20
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
3
2
--1000
7
5
3
2
--100
7
5
3
2
--10
7 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
5
°
C
75
°
C
25
Ta=
°
C
25
5
--2
°
C
7
Ta=
5
°
C
5
--2
°
C
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
Collector Current, IC -- A
--10
7
ITR09041
10
VBE(sat) -- IC
Collector Current, IC -- A
ITR09042
VBE(sat) -- IC
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
2SB1142
IC / IB=20
7
5
3
2
2SD1682
IC / IB=20
5
3
2
--1.0
7
5
3
2
7 --0.01
2
Ta= --25
°C
25
°
C
1.0
7
5
3
2
Ta= --25°C
25
°
C
75
°
C
75
°
C
3
5
7 --0.1
2
3
5
7 --1.0
2
3
5
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
Collector Current, IC -- A
10
7
5
3
ITR09043
2.0
ASO
Collector Current, IC -- A
ITR09044
PC -- Ta
ICP=5A
IC=2.5A
2SB1142 / 2SD1682
Collector Dissipation, PC -- W
10
1ms
ms
10
0m
s
DC
2SB1142 / 2SD1682
Collector Current, IC -- A
2
1.0
7
5
3
2
0.1
7
5
3
2
1.5
DC
op
op
era
tio
No
1.0
nT
a=
Ta=25°C
Single pulse
For PNP, minus sign is omitted.
5
7 1.0
2
3
5
7
10
2
3
Collector-to-Emitter Voltage, VCE --
12
PC -- Tc
er
he
25
ati
on
at
sin
k
°
C
=
Tc
2SB1142 / 2SD1682
°
C
25
7 100
V
ITR09045
5
0.5
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT11602
Collector Dissipation, PC -- W
10
8
Id
e
6
al
ra
di
ati
on
4
2
0
0
20
40
60
80
100
120
140
160
Case Temperature, Tc --
°C
IT11603
No.2060-4/5
2SB1142 / 2SD1682
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of October, 2006. Specifications and information herein are subject
to change without notice.
PS No.2060-5/5
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