Ordering number:ENN2060A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1142/2SD1682
50V/2.5A High-Speed Switching Applications
Applications
· Power supplies, relay drivers, lamp drivers.
Package Dimensions
unit:mm
2042B
[2SB1142/2SD1682]
8.0
1.0
1.4
Features
· Adoption of FBET, MBIT processes.
· Low saturation voltage.
· Large current capacity and wide ASO.
1.6
0.8
4.0
1.0
3.3
3.0
1.5
7.5
3.0
0.8
0.75
15.5
11.0
0.7
1
2
3
4.8
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25˚C
Conditions
1.7
( ) : 2SB1142
2.4
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
Ratings
(–)60
(–)50
(–)6
(–)2.5
(–)5.0
1.5
10
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
IEBO
VCB=(–)50V, IE=0
VEB=(–)4V, IC=0
Conditions
Ratings
min
typ
max
(–)100
(–)100
Unit
nA
nA
* : The 2SB1142/2SD1682 are classified by 100mA h
FE
as follows :
2SB1142
Rank
hFE
Q
100 to 200
R
100 to 200
S
140 to 280
S
140 to 280
Continued on next page.
T
200 to 400
T
200 to 400
U
280 to 560
2SD1682
Rank
hFE
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O2003TN (KOTO)/92098HA (KT)/D151MH, (KOTO) No.2060–1/4
2SB1142/2SD1682
Continued from preceding page.
Parameter
Symbol
hFE1
hFE2
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Output Capacitance
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
fT
VCE(sat)
VBE(sat)
Cob
Conditions
VCE=(–)2V, IC=(–)100mA
VCE=(–)2V, IC=(–)2A
VCE=(–)10V, IC=(–)50mA
IC=(–)1A, IB=(–)50mA
IC=(–)1A, IB=(–)50mA
VCB=(–)10V, f=1MHz
(–)60
(–)50
(–)6
(35)35
(350)
550
(30)30
Ratings
min
(100)*
100*
35
140
(–250)
110
(–)0.85
(25)16
(–500)
300
(–)1.2
MHz
mV
mV
V
pF
V
V
V
ns
ns
ns
ns
typ
max
(400)*
560
Unit
DC Current Gain
V(BR)CBO IC=(–)10µA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
V(BR)EBO IE=(–)10µA, IC=0
ton
tstg
tf
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
Switching Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
IB1
OUTPUT
IB2
VR
50Ω
+
100µF
VBE= --5V
+
470µF
VCC=25V
RB
IC=10IB1= --10IB2=1A
(For PNP, the porarity is reversed.)
--2.0
IC -- VCE
2SB1142
A
0m
--3
--25
mA
--20m
A
2.0
IC -- VCE
2SD1682
A
18m
Collector Current, IC – A
Collector Current, IC – A
--1.6
--15mA
16m
mA
A
14
12mA
1.6
--10mA
--1.2
20
1.2
mA
10mA
8mA
6mA
--5mA
--0.8
0.8
4mA
--3mA
--2mA
--0.4
2mA
0.4
--1mA
0
0
--0.4
--0.8
--1.2
IB=0
--1.6
--2.0
ITR09031
0
0
0.4
0.8
1.2
IB=0
1.6
2.0
ITR09032
Collector-to-Emitter Voltage, VCE – V
--2.0
Collector-to-Emitter Voltage, VCE – V
2.0
IC -- VCE
2SB1142
mA
--12
A
--10m
IC -- VCE
2SD1682
10mA
9mA
8mA
7mA
6mA
Collector Current, IC – A
--8mA
--1.2
--6mA
--4mA
Collector Current, IC – A
--1.6
1.6
1.2
5mA
4mA
0.8
--0.8
3mA
--2mA
--0.4
2mA
0.4
1mA
0
0
--4
--8
--12
IB=0
--16
--20
ITR09033
0
0
4
8
12
IB=0
16
20
ITR09034
Collector-to-Emitter Voltage, VCE – V
Collector-to-Emitter Voltage, VCE – V
No.2060–2/4
2SB1142/2SD1682
--2.8
IC -- VBE
2SB1142
VCE= --2V
2.8
IC -- VBE
2SD1682
VCE=2V
--2.4
2.4
Collector Current, IC – A
Collector Current, IC – A
--2.0
2.0
--1.6
25
°
C
1.6
Ta=7
5
°
C
--1.2
--25
°
C
1.2
--0.8
0.8
--0.4
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
0.4
0
0
0.2
0.4
0.6
Ta=7
5
°
C
25
°
C
--25
°
C
0.8
1.0
1.2
ITR09036
Base-to-Emitter Voltage, VBE – V
1000
7
5
ITR09035
1000
Base-to-Emitter Voltage, VBE – V
hFE -- IC
2SB1142
VCE= --2V
hFE -- IC
2SD1682
VCE=2V
Ta=75°C
--25
°C
7
5
Ta=75°C
DC Current Gain, hFE
DC Current Gain, hFE
3
2
25°C
3
2
25°C
--25°C
100
7
5
3
2
100
7
5
3
2
10
7 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
5
10
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
Collector Current, IC – A
5
ITR09037
100
Collector Current, IC – A
ITR09038
f T -- IC
2SB1142 / 2SD1682
VCE=10V
Cob -- VCB
2SB1142 / 2SD1682
f=1MHz
Gain-Bandwidth Product, fT – MHz
3
2
7
Output Capacitance, Cob -- pF
2S
2S
B1
14
5
D1
68
2
3
2
2SB
114
2
100
7
5
3
2
2
2SD
168
2
10
7
5
10
For PNP, minus sign is omitted.
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
3
7
ITR09039
5
3
For PNP, minus sign is omitted.
1.0
2
3
5
7
10
2
3
5
7
Collector Current, IC – A
5
3
Collector-to-Base Voltage, VCB -- V
ITR09040
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE (sat) – mV
2SB1142
IC / IB=20
VCE(sat) -- IC
2SD1682
IC / IB=20
Collector-to-Emitter
Saturation Voltage, VCE (sat) – mV
2
2
--1000
7
5
3
2
--100
7
5
3
2
--10
7 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
5
1000
7
5
3
2
100
7
5
3
2
10
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
25
°
C
75
Ta=
°
C
25
75
°
C
Ta=
°
C
5
--2
°
C
5
°
C
--2
Collector Current, IC – A
ITR09041
Collector Current, IC – A
ITR09042
No.2060–3/4
2SB1142/2SD1682
--10
7
VBE(sat) -- IC
2SB1142
IC / IB=20
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
10
7
5
3
2
VBE(sat) -- IC
2SD1667
2SD1682
IC / IB=20
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
5
3
2
--1.0
7
5
3
2
7 --0.01
2
Ta= --25
°C
75
°
C
25
°
C
1.0
7
5
3
2
7 0.01
Ta= --25°C
25
°
C
75
°
C
3
5
Collector Current, IC – A
7 --0.1
2
3
5
7 --1.0
2
3
5
2
3
5
ITR09043
12
Collector Current, IC – A
7 0.1
2
3
5
7 1.0
2
3
5
ITR09044
10
7
5
3
ASO
ICP=5A
IC=2.5A
2SB1142 / 2SD1682
Collector Dissipation, P
C
– W
PC -- Ta
2SB1142 / 2SD1682
Collector Current, IC – A
2
1.0
7
5
3
2
0.1
7
5
3
2
5
10
1ms
ms
10
0m
s
DC
op
10
8
DC
op
er
ati
T
on
era
tio
6
nT
a=
c=
°
C
25
25
°
C
4
2
1.5
0
Ta=25°C
Single pulse
7 1.0
2
3
5
7
No heat sin
k
0
20
40
60
80
100
120
140
160
Collector-to-Emitter Voltage, VCE – V
10
2
3
5
7 100
ITR09045
Ambient Temperature, Ta – ˚C
ITR09046
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of October, 2003. Specifications and information herein are subject
to change without notice.
PS No.2060–4/4
嵌入式系统
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