Ordering number:ENN3151
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1451/2SD2200
80V/5A Switching Applications
Features
· Surface mount type device making the following
possible.
-Reduction in the number of manufacturing pro-
cesses for 2SB1451/2SD2200-applied equipment.
-High density surface mount applications.
-Small size of 2SB1451/2SD2200-applied equip-
ment.
· Low collector-to-emitter saturation voltage.
· Large current capacity.
Package Dimensions
unit:mm
2069C
[2SB1451/2SD2200]
0.8
10.2
4.5
1.3
9.9
1.5max
8.8
3.0
2.55
1.2
2.55
1.35
1
0.8
2
3
0 to 0.3
0.4
( ) : 2SB1451
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
2.55
2.55
1 : Base
2 : Collector
3 : Emitter
SANYO : SMP-FD
2.7
Ratings
(–)90
(–)80
(–)6
(–)5
(–)9
1.65
1.4
Unit
V
V
V
A
A
W
W
Tc=25˚C
30
150
–55 to +150
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE1
hFE2
fT
VCB=(–)80V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)1A
VCE=(–)2V, IC=(–)3A
VCE=(–)5V, IC=(–)1A
70*
30
20
MHz
Conditions
Ratings
min
typ
max
(–)0.1
(–)0.1
280*
Unit
mA
mA
* : The 2SB1451/2SD2200 are classified by 1A h
FE
as follows :
Rank
hFE
Q
70 to 140
R
100 to 200
S
140 to 280
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42804TN (PC)/N1098HA (KT)/7039MO, TS No.3151–1/4
2SB1451/2SD2200
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
VCE(sat)
Conditions
IC=(–)3A, IB=(–)0.3A
(–)90
(–)80
(–)6
(0.2)
0.1
(0.7)
1.2
(0.2)
0.4
Ratings
min
typ
max
0.4
(–0.5)
Unit
V
V
V
V
V
µs
µs
µs
µs
µs
µs
V(BR)CBO IC=(–)1mA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
V(BR)EBO IE=(–)1mA, IC=0
ton
tstg
tf
See specified test circuit.
See specified test circuit.
See specified test circuit.
Switching Time Test Circuit
PW=20μs
D.C.≤1%
INPUT
50Ω
IB1
IB2
RB
1Ω
VR
10Ω
+
100μF
+
470μF
OUTPUT
RL
VBE=--5V
VCC=50V
10IB1=--10IB2=IC=2A
For PNP, the polarity is reversed.
--5.0
--4.5
IC -- VCE
2SB1451
From top
--200mA
--180mA
--160mA
--140mA
--120mA
0
--10
A
--80m
mA
5.0
4.5
IC -- VCE
2SD2200 From top
200mA
180mA
160mA
A
100m
80mA
60mA
20mA
A
1
140m
40mA
Collector Current, IC – A
--3.5
--3.0
--2.5
Collector Current, IC – A
--4.0
--60mA
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
--40mA
--20mA
--2.0
--1.5
--1.0
--0.5
0
20mA
IB=0
0
--0.2
--0.4
--0.6
--0.8
--1.0 --1.2
--1.4
--1.6
--1.8
--2.0
0
IB=0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Collector-to-Emitter Voltage, VCE – V
--10
--9
ITR09707
10
9
Collector-to-Emitter Voltage, VCE – V
ITR09708
IC -- VCE
2SB1451 From top
--900mA
--800mA
--700mA
--600mA
--500mA
--400mA
--300mA
IC -- VCE
2SD2200
1A
mA
500
mA
900
800mA
700mA
600mA
400mA
300mA
200mA
100mA
Collector Current, IC – A
Collector Current, IC – A
--8
--7
--6
--5
--4
--3
--2
--1
0
8
7
6
5
4
3
2
1
mA
--200
A
--100m
IB=0
0
--0.2
--0.4
--0.6
--0.8
--1.0 --1.2
--1.4
--1.6
--1.8
--2.0
0
IB=0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Collector-to-Emitter Voltage, VCE – V
ITR09709
Collector-to-Emitter Voltage, VCE – V
ITR09710
No.3151–2/4
2SB1451/2SD2200
--12
IC -- VBE
2SB1451
VCE=--2V
Collector Current, IC – A
12
IC -- VBE
2SD2200
VCE=2V
--10
10
Collector Current, IC – A
--8
8
--6
6
Ta=
120
°
C
25
°
C
--40
°
C
Ta=
12
0
0.2
0.4
0.6
25
°
C
--2
2
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
0
0.8
--40
°
C
1.0
--4
4
0
°
C
1.2
1.4
Base-to-Emitter Voltage, VBE – V
1000
5
3
2
ITR09711
1000
Base-to-Emitter Voltage, VBE – V
ITR09712
hFE -- IC
Ta=120
°C
25
°C
hFE -- IC
Ta=120
°C
2SB1451
VCE=--2V
DC Current Gain, hFE
5
3
2
100
5
3
2
10
5
3
2
2SD2200
VCE=2V
25
°C
DC Current Gain, hFE
100
5
3
2
10
5
3
2
1.0
--0.01 2
3
5
--40
°C
--40
°C
--0.1
2
3
5
--1.0
2
3
5
Collector Current, IC – A
--100
5
2
--10
ITR09713
1.0
0.01
2
3
5
0.1
2
3
5
1.0
2
3
5
Collector Current, IC – A
100
2
10
ITR09714
VCE(sat) -- IC
2SB1451
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
VCE(sat) -- IC
2SD2200
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
3
2
--10
5
3
2
--1.0
5
3
2
--0.1
5
3
2
2
3
5
--0.1
2
3
5
3
2
10
5
3
2
1.0
5
3
2
0.1
5
3
2
2
3
5
0.1
25
°C
C
25
°
Ta=
°
C
120
°
C
--40
5
--1.0
2
3
5
2
--10
ITR09715
20
°
C
Ta=1
C
--40
°
2
3
5
1.0
2
3
5
2
10
ITR09716
--0.01
--0.01
0.01
0.01
Collector Current, IC – A
--100
5
Collector Current, IC – A
100
VBE(sat) -- IC
2SB1451
IC / IB=10
VBE(sat) -- IC
2SD2200
IC / IB=10
5
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
3
2
--10
5
3
2
--1.0
5
3
2
--0.1
--0.01
2
3
5
2
3
5
2
3
5
2
--10
ITR09717
3
2
10
5
3
2
1.0
5
3
2
0.1
0.01
2
3
5
2
3
5
2
3
5
2
10
ITR09718
25
°C
Ta=--40
°C
Ta=--40
°C
25
°C
120
°C
120
°C
--0.1
--1.0
0.1
1.0
Collector Current, IC – A
Collector Current, IC – A
No.3151–3/4
2SB1451/2SD2200
2
--10
7
5
3
2
ASO
ICP=–9A
IC=–5A
10
0
ms
s
1m
s
m
10
2
ASO
ICP=9A
IC=5A
10
0m
s
s
1m
2SB1451
10
7
5
3
2
2SD2200
Collector Current, IC – A
Collector Current, IC – A
10
DC
ms
--1.0
7
5
3
2
DC
op
1.0
7
5
3
2
0.1
7
5
op
era
er a
ti o
n
n
tio
--0.1
7
5
3
--1.0
1ms to 10ms : Single pulse
2
3
5
7
--10
2
3
5
Collector-to-Emitter Voltage, VCE – V
2.0
--100
ITR09719
7
3
1.0
1ms to 10ms : Single pulse
2
3
5
7
10
2
3
5
Collector-to-Emitter Voltage, VCE – V
32
7 100
ITR09736
PC -- Ta
2SB1451 / 2SD2200
PC -- Ta
2SB1451 / 2SD2200
30
28
Collector Dissipation, P
C
– W
Collector Dissipation, P
C
– W
100
120
140
160
1.65
1.6
24
20
16
12
8
4
1.2
No
he
at
sin
k
0.8
0.4
0
0
20
40
60
80
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta – ˚C
ITR09721
Ambient Temperature, Ta – ˚C
ITR09722
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of April, 2004. Specifications and information herein are subject to
change without notice.
PS No.3151–4/4
汽车电子
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