Ordering number : EN3150A
2SB1450 / 2SD2199
SANYO Semiconductors
DATA SHEET
2SB1450 / 2SD2199
Features
•
PNP / NPN Epitaxial Planar Silicon Transistors
50V/7A Switching Applications
•
•
Surface mount type device making the following possible.
- Reduction in the number of manufacturing processes for 2SB1450/2SD2199-applied equipment.
- High density surface mount applications.
- Small size of 2SB1450/2SD2199-applied equipment.
Low collector-to-emitter saturation voltage.
Highly resistant to breakdown because of wide ASO.
Specifications
( ) : 2SB1450
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
(--)60
(--)50
(--)6
(--)7
(--)12
1.65
40
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
IEBO
Conditions
VCB=(--)40V, IE=0A
VEB=(-
-)4V, IC=0A
Ratings
min
typ
max
(--)0.1
(--)0.1
Unit
mA
mA
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O2407FA TI IM TC-00000977 / 41504TN (PC) / O1598HA (KT) / 7039MO, TS No.3150-1/4
2SB1450 / 2SD2199
Continued from preceding page.
Parameter
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
hFE1
hFE2
fT
VCE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
VCE=(-
-)2V, IC=(--)1A
VCE=(-
-)2V, IC=(--)5A
VCE=(-
-)5V, IC=(--)1A
IC=(--)4A, IB=(--)0.4A
IC=(--)1mA, IE=0A
IC=(--)1mA, RBE=∞
IE=(-
-)1mA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
(--)60
(--)50
(--)6
0.2
(0.7)0.9
(0.1)0.3
Ratings
min
70*
30
10
(-
-)0.4
MHz
V
V
V
V
µs
µs
µs
typ
max
280*
Unit
* : The 2SBB1450 / 2SD2199 are classified by 1A hFE as follows :
Rank
Q
R
S
hFE
70 to 140
100 to 200
140 to 280
Package Dimensions
unit : mm (typ)
7001-002
10.2
0.2
4.5
1.3
Switching Time Test Circuit
IB1
IB2
RB
1Ω
VR
100Ω
+
+
1µF
1µF
OUTPUT
PW=20µs
tr, tf
≤15ns
INPUT
RL
50Ω
9.9
1.5MAX
8.8
3.0
1.35
1.4
1
0.8
2
3
1.2
0 to 0.3
0.4
2.7
VBE=
--5V
VCC=20V
2.55
2.55
IC=10IB1= --10IB2=2A
For PNP, the polarity is reversed.
1 : Base
2 : Collector
3 : Emitter
SANYO : SMP-FD
2.55
2.55
--12
IC -- VCE
2SB1450
12
IC -- VCE
4
60
--10
Collector Current, IC -- A
Collector Current, IC -- A
A
--1
A
A
0m
0m
80
--60
400mA
--
--
mA
00
200mA
10
--8
--200
mA
8
1A
0m
2SD2199
A
100mA
6
--6
--100mA
--4
80mA
60mA
--80mA
--60mA
4
40mA
20mA
--2
--40mA
--20mA
--10mA
IB=0mA
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
2
0
0
IB=0mA
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Collector-to-Emitter Voltage, VCE -- V
ITR09695
Collector-to-Emitter Voltage, VCE -- V
ITR09696
No.3150-2/4
2SB1450 / 2SD2199
--12
IC -- VBE
2SB1450
VCE=--2V
12
IC -- VBE
2SD2199
VCE=2V
--10
10
Collector Current, IC -- A
Collector Current, IC -- A
--8
8
--6
6
--4
4
--2
2
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Base-to-Emitter Voltage, VBE -- V
5
3
2
ITR09697
5
3
2
Base-to-Emitter Voltage, VBE -- V
ITR09698
hFE -- IC
2SB1450
VCE=--2V
hFE -- IC
2SD2199
VCE=2V
DC Current Gain, hFE
DC Current Gain, hFE
100
7
5
3
2
10
7
5
3
2
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
2
5 7 --10
ITR09701
100
7
5
3
2
10
7
5
3
2
2
3
5 7 0.1
2
3
5 7 1.0
2
3
2
5 7 10
ITR09702
Collector Current, IC -- A
5
3
VCE(sat) -- IC
Collector Current, IC -- A
5
3
VCE(sat) -- IC
2SB1450
2SD2199
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2
--1.0
7
5
3
2
--0.1
7
5
3
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
5 7 --10
2
ITR09703
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.01
0
=2
/IB
0
IC
=1
IB
/
IC
IC
=2
/ IB
IC
0
0
=1
/ IB
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC -- A
ASO
10
Collector Current, IC -- A
2
5 7 10
2
ITR09704
ASO
2
ICP=--12A
--10
2SB1450
10
ICP=12A
100ms
2SD2199
Collector Current, IC -- A
5
Collector Current, IC -- A
7
I
I
C=--7A
C
7
5
3
2
1.0
7
5
3
2
0.1
IC=7A
0m
s
10
1m
s
s
1m
s
m
3
2
ms
DC
era
op
10
DC
ti
era
op
--1.0
7
5
3
2
tio
n
on
--0.1
Tc=25°C
1ms to 100ms: Single pulse
5
7 --1.0
2
3
5
7
--10
2
3
5
Tc=25°C
1ms to 100ms: Single pulse
5
7
1.0
2
3
5
7
10
2
3
5
Collector-to-Emitter Voltage, VCE -- V
7 --100
IT13047
Collector-to-Emitter Voltage, VCE -- V
7 100
IT13048
No.3150-3/4
2SB1450 / 2SD2199
2.0
PC -- Ta
50
PC -- Tc
Collector Dissipation, PC -- W
Collector Dissipation, PC -- W
120
140
160
1.65
1.6
40
1.2
No
30
he
at
s
0.8
in
k
20
0.4
10
0
0
20
40
60
80
100
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT13049
Case Temperature, Tc --
°C
IT13050
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
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safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
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above.
This catalog provides information as of October, 2007. Specifications and information herein are subject
to change without notice.
PS No.3150-4/4
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