Transistor
2SD1512
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
4.0±0.2
M
Di ain
sc te
on na
tin nc
ue e/
d
s
Features
q
q
0.7±0.1
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
Ratings
100
100
15
50
20
Unit
V
V
V
1
2
3
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
1.27 1.27
2.54±0.15
mA
mA
Collector power dissipation
Junction temperature
Storage temperature
300
150
mW
˚C
˚C
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
T
stg
–55 ~ +150
s
Electrical Characteristics
Parameter
Collector cutoff current
(Ta=25˚C)
Symbol
Conditions
min
typ
max
0.1
1.0
2.0±0.2
(Ta=25˚C)
marking
+0.2
0.45–0.1
s
Absolute Maximum Ratings
15.6±0.5
Allowing supply with the radial taping.
High foward current transfer ratio h
FE
.
nt
in
I
CBO
I
CEO
Collector to emitter voltage
Emitter to base voltage
is
co
Collector to base voltage
V
CBO
V
CEO
V
EBO
h
FE*
f
T
NV
Collector to emitter saturation voltage
an
Forward current transfer ratio
en
V
CE(sat)
Transition frequency
M
Noise voltage
*
h
FE
Rank classification
R
400 ~ 800
S
600 ~ 1200
h
FE
Rank
Pl
e
pl d in
as
an c
e
ed lud
pl
vi
an m m es
si
tf
ed ain ai fo
ol
lo dis dis ten nte llow
ht w c
tp in o co an nan in
:// g nt n ce c g
pa U in tin t e fo
na RL ue ue ype typ ur
so a d t d
e Pr
od
ni bo yp typ
c. u e e
uc
ne t l
d
tl
at
ife
t/s e
cy
c/ st
en in
cl
e
fo
st
rm
ag
at
e.
io
n.
Unit
µA
µA
V
V
V
V
CB
= 100V, I
E
= 0
V
CE
= 60V, I
B
= 0
I
C
= 10µA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10µA, I
C
= 0
100
100
15
V
CE
= 10V, I
C
= 2mA
400
1200
0.2
I
C
= 10mA, I
B
= 1mA
0.05
200
80
V
V
CB
= 10V, I
E
= –2mA, f = 200MHz
V
CE
= 10V, I
C
= 1mA, G
V
= 80dB
R
g
= 100kΩ, Function = FLAT
MHz
mV
ai
nt
ce
/D
ue
3.0±0.2
1
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semiconductors described in this book
(1)
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Consult our sales staff in advance for information on the following applications:
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