This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SD1511
Silicon NPN epitaxial planar type darlington
For low-frequency output amplification
■
Features
Unit: mm
4.5
±0.1
1.6
±0.2
1.5
±0.1
M
Di ain
sc te
on na
tin nc
ue e/
d
•
Forward current transfer ratio h
FE
is designed high, which is appro-
priate to the driver circuit of motors and printer hammer: h
FE
=
4 000
to 20 000.
•
A shunt resistor is omitted from the driver.
•
Mini power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
1
0.4
±0.08
3
2
0.5
±0.08
1.5
±0.1
3˚
4.0
+0.25
–0.20
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
*
Junction temperature
Storage temperature
T
stg
Note) *: Printed circuit board: Copper foil area of 1 cm
2
or more, and the
board thickness of 1.7 mm for the collector portion
nt
in
Parameter
ue
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE
Collector-base voltage (Emitter open)
is
Collector-emitter voltage (Base open)
/D
Emitter-base voltage (Collector open)
ce
Collector-base cutoff current (Emitter open)
an
Emitter-base cutoff current (Collector open)
en
Forward current transfer ratio
*1, 2
ai
nt
Collector-emitter saturation voltage
*1
Base-emitter saturation voltage
*1
V
CE(sat)
V
BE(sat)
f
T
M
Transition frequency
Pl
e
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
h
FE
Q
R
S
4 000 to 10 000 8 000 to 20 000 16 000 to 40 000
Publication date: November 2002
pl d in
as
an c
e
ed lud
pl
vi
an m m es
si
tf
ed ain ai fo
ol
lo dis dis ten nte llow
ht w c
tp in o co an nan in
:// g nt n ce c g
pa U in tin t e fo
na RL ue ue ype typ ur
so a d t d
e Pr
od
ni bo yp typ
c. u e e
uc
ne t l
d
tl
at
ife
t/s e
cy
c/ st
en in
cl
e
fo
st
rm
ag
at
e.
io
n.
1.0
+0.1
–0.2
3˚
2.5
±0.1
0.4
±0.04
45˚
Rating
100
80
5
1
Unit
V
3.0
±0.15
V
V
A
1: Base
2: Collector
3: Emitter
MiniP3-F1 Package
1.5
1
A
Marking Symbol: P
W
150
°C
Internal Connection
−55
to
+150
°C
C
B
≈
200
Ω
E
Conditions
Min
100
80
5
Typ
Max
Unit
V
co
I
C
=
100
µA,
I
E
=
0
I
C
=
1 mA, I
B
=
0
I
E
=
100
µA,
I
C
=
0
V
CB
=
25 V, I
E
=
0
V
EB
=
4 V, I
C
=
0
V
V
100
nA
V
V
100
nA
V
CE
=
10 V, I
C
=
1 A
I
C
=
1 A, I
B
=
1 mA
I
C
=
1 A, I
B
=
1 mA
4 000
40 000
1.8
2.2
V
CB
=
10 V, I
E
= −50
mA, f
=
200 MHz
150
MHz
0.4 max.
2.6
±0.1
SJC00225CED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1511
P
C
T
a
1.2
Copper plate at the collector
is more than 1 cm
2
in area,
1.7 mm in thickness
2.4
I
C
V
CE
T
a
=
25°C
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
100
I
C
/ I
B
=
1 000
Collector power dissipation P
C
(W)
1.0
2.0
Collector current I
C
(A)
10
0.8
1.6
0.6
1.2
180
µA
160
µA
I
B
=
200
µA
140
µA
120
µA
100
µA
25°C
1
T
a
= −25°C
75°C
0.4
0.8
80
µA
60
µA
40
µA
0.1
0.2
0.4
0
0
40
80
120
160
200
0
0
2
4
6
8
10
0.01
0.01
0.1
1
10
Ambient temperature T
a
(
°C
)
Collector-emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
I
C
100
h
FE
I
C
T
a
=
75°C
25°C
10000
−25°C
1 000
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
V
CE
=
10 V
30
I
E
=
0
f
=
1 MHz
T
a
=
25°C
Base-emitter saturation voltage V
BE(sat)
(V)
I
C
/ I
B
=
1 000
100000
Forward current transfer ratio h
FE
25
10
25°C
T
a
= −25°C
1
75°C
20
15
10
0.1
100
5
0.01
0.01
0.1
1
10
10
0.01
0.1
1
10
0
1
10
100
Collector current I
C
(A)
Collector current I
C
(A)
Collector-base voltage V
CB
(V)
2
SJC00225CED
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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