Power Field-Effect Transistor, 2A I(D), 900V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F15, 3 PIN
| 参数名称 | 属性值 |
| 零件包装代码 | TO-220F15 |
| 包装说明 | FLANGE MOUNT, R-PSFM-T3 |
| 针数 | 3 |
| Reach Compliance Code | unknow |
| 外壳连接 | ISOLATED |
| 配置 | SINGLE |
| 最小漏源击穿电压 | 900 V |
| 最大漏极电流 (ID) | 2 A |
| 最大漏源导通电阻 | 8.5 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-220AB |
| JESD-30 代码 | R-PSFM-T3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 极性/信道类型 | N-CHANNEL |
| 功耗环境最大值 | 40 W |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | SINGLE |
| 晶体管元件材料 | SILICON |
| 最大关闭时间(toff) | 170 ns |
| 最大开启时间(吨) | 90 ns |
| Base Number Matches | 1 |
| 2SK957MR | 2SK951MR | 2SK2051S | |
|---|---|---|---|
| 描述 | Power Field-Effect Transistor, 2A I(D), 900V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F15, 3 PIN | Power Field-Effect Transistor, 2.5A I(D), 800V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F15, 3 PIN | Power Field-Effect Transistor, 10A I(D), 250V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TPACK-3 |
| 包装说明 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | SMALL OUTLINE, R-PSSO-G2 |
| 针数 | 3 | 3 | 3 |
| Reach Compliance Code | unknow | unknow | unknow |
| 外壳连接 | ISOLATED | ISOLATED | DRAIN |
| 配置 | SINGLE | SINGLE | SINGLE |
| 最小漏源击穿电压 | 900 V | 800 V | 250 V |
| 最大漏极电流 (ID) | 2 A | 2.5 A | 10 A |
| 最大漏源导通电阻 | 8.5 Ω | 7 Ω | 0.4 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 | R-PSSO-G2 |
| 元件数量 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 2 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | SMALL OUTLINE |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 功耗环境最大值 | 40 W | 40 W | 80 W |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | YES |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | GULL WING |
| 端子位置 | SINGLE | SINGLE | SINGLE |
| 晶体管元件材料 | SILICON | SILICON | SILICON |
| 最大关闭时间(toff) | 170 ns | 280 ns | 225 ns |
| 最大开启时间(吨) | 90 ns | 120 ns | 90 ns |
| Base Number Matches | 1 | 1 | 1 |
| 零件包装代码 | TO-220F15 | TO-220F15 | - |
| JEDEC-95代码 | TO-220AB | TO-220AB | - |
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