2SK2022-01MR
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breakdown
Low driving power
High voltage
V
GS
=±30V Guarantee
Avalanche-proof
FUJI POWER MOSFET
FAP-IIA SERIES
Outline Drawings
TO-220F15
Applications
Switching regulators
UPS
DC-DC converters
General purpose power amplifier
2.54
3. Source
JEDEC
EIAJ
SC-67
Maximum ratings and characteristics
Absolute maximum ratings ( Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Continuous reverse drain current
Gate-source peak voltage
Max. power dissipation
Operating and storage
temperature range
Symbol
V
DS
I
D
I
D(puls]
I
DR
V
GS
P
D
T
ch
T
stg
Rating
500
5
20
5
±30
40
+150
-55 to +150
Unit
V
A
A
A
V
W
°C
°C
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (T
c
=25°C unless otherwise specified)
Item
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
(t
on
=t
d(on)
+t
r
)
Turn-off time t
off
(t
off
=t
d(off)
+t
f
)
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
I
AV
V
SD
t
rr
Q
rr
Test Conditions
I
D
=1mA
V
GS
=0V
I
D
=1mA
V
DS
=V
GS
V
DS
=500V V
GS
=0V
V
GS
=±30V V
DS
=0V
I
D
=2.5A V
GS
=10V
I
D
=2.5A V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=300V R
G
=10
Ω
I
D
=5A
V
GS
=10V
L=100µH T
ch
=25°C
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C
I
F
=I
DR
V
GS
=0V
-di/dt=100A/µs T
ch
=25°C
Min.
500
2.5
T
ch
=25°C
T
ch
=125°C
Typ.
Max.
3.5
500
1.0
100
1.6
1500
130
30
30
25
70
30
1.65
Units
V
V
µA
mA
nA
Ω
S
pF
3.0
10
0.2
10
1.2
2.0
4.0
1000
85
20
20
15
45
20
5
1.1
400
2
ns
A
V
ns
µC
Thermal characteristics
Item
Thermal resistance
Symbol
R
th(ch-a)
R
th(ch-c)
Test Conditions
channel to ambient
channel to case
Min.
Typ.
Max.
62.5
3.125
Units
°C/W
°C/W
1
FUJI POWER MOSFET
Characteristics
Typical output characteristics
15
2SK2022-01MR
On state resistance vs. T
ch
4
10
I
D
[A]
R
DS(on)
[
Ω
]
2
5
0
0
10
V
DS
[ V ]
20
30
0
-50
0
50
T
ch
[ °C ]
100
150
Typical transfer characteristics
12
8
Typical Drain-Source on state resistance vs. I
D
10
6
8
R
DS(on)
[
Ω
]
I
D
6
[A]
4
2
2
4
0
0
2
4
6
V
GS
[ V ]
8
10
12
0
0
5
I
D
[ A ]
10
15
Typical forward transconductance vs. I
D
10
Gate threshold voltage vs. T
ch
8
4.0
6
gfs
[S]
4
V
GS(th)
[V]
2.0
2
0
0
2
4
I
D
[ A ]
6
8
10
0
-50
0
50
T
ch
[ °C ]
100
150
2
FUJI POWER MOSFET
Typical capacitance vs. V
DS
10
1
2SK2022-01MR
Typical input charge
400
10
0
C
[nF]
10
-1
20
300
V
DS
[V]
200
V
GS
[V]
10
10
-2
100
10
-3
0
10
20
V
DS
[ V ]
30
40
0
0
20
Qg [ nC ]
40
0
Forward characteristics of reverse diode
10
1
60
Allowable power dissipation vs. T
c
10
0
I
F
[A]
10
-1
40
P
D
[W]
20
10
-2
0
0.5
V
SD
[ V ]
1.0
1.5
0
0
50
T
c
[ °C ]
100
150
Safe operating area
10
2
Transient thermal impedance
10
1
10
0
R
th
[°C/W]
10
-1
10
-1
I
D
[A]
10
0
10
-2
10
-5
10
-4
10
-3
10
-2
t [ sec. ]
10
-1
10
0
10
1
10
-2 0
10
10
1
V
DS
10
2
[V]
10
3
3
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