Ordering number : EN1942B
2SA1391 / 2SC3382
SANYO Semiconductors
DATA SHEET
2SA1391 / 2SC3382
Features
•
•
•
PNP / NPN Epitaxial Planar Silicon Transistors
Low Noise AF Amp Applications
Adoption of FBET process.
AF amp.
Low-noise use.
Specifications
( ) : 2SA1391
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Ratings
(--)60
(--)50
(--)6
(--)200
(--)400
400
150
--55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE1
hFE2
Conditions
VCB=(--)40V, IE=0A
VEB=(-
-)5V, IC=0A
VCE=(--)6V, IC=(-
-)1mA
VCE=(--)6V, IC=(-
-)0.1mA
100*
70
Ratings
min
typ
max
(--)0.1
(--)0.1
560*
Unit
µA
µA
Continued on next page.
*
: The 2SA1391 / 2SC3382 are classified by 1mA hFE as follws:
Rank
R
S
T
hFE
100 to 200
140 to 280
200 to 400
U
280 to 560
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D0507GA TI IM TC-00001043 / O3103TN (KT) / 71598HA (KT) / 4277TA, TS No.1942-1/6
2SA1391 / 2SC3382
Continued from preceding page.
Parameter
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Noise Level
Noise Peak Level
Symbol
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VNO(ave)
VNO(peak)
Conditions
VCE=(-
-)6V, IC=(--)10mA
VCB=(-
-)6V, f=1MHz
IC=(--)100mA, IB=(--)10mA
IC=(--)100mA, IB=(--)10mA
IC=(--)10µA, IE=0A
IC=(--)1mA, RBE=∞
IE=(-
-)10µA, IC=0A
VCC=(--)30V, IC=(--)1mA, Rg=56kΩ, VG=77dB/1kHz
VCC=(--)30V, IC=(--)1mA, Rg=56kΩ, VG=77dB/1kHz
(--)60
(--)50
(--)6
(35)40
(200)280
Ratings
min
typ
(200)250
(3.7)2.7
(-
-)0.3
(-
-)1.0
max
Unit
MHz
pF
V
V
V
V
V
mV
mV
Package Dimensions
unit : mm (typ)
7522-002
5.0
4.0
Noise Test Circuit
T.U.T amp
Filter circuit
V.V
4.0
Rg
56kΩ
VG=36.5dB
VG=40.5dB
(at 1kHz)
C.R.O
0.45
0.5
0.6
2.0
0.45
14.0
5.0
0.44
1 2 3
1 : Emitter
2 : Collector
3 : Base
1.3
1.3
SANYO : NP
--20
IC -- VCE
A
0
0
µ
--6
--7
µ
A
2SA1391
20
IC -- VCE
60
µ
A
2SC3382
µ
A
--50
--
40
µ
A
--30
µ
A
--20
µ
A
Collector Current, IC -- mA
Collector Current, IC -- mA
--16
16
50
µ
A
40
µ
A
12
--12
30
µ
A
8
--8
20
µ
A
--4
--10
µ
A
4
10
µ
A
0
0
IB=0
µ
A
--10
--20
--30
--40
--50
0
IB=0
µ
A
0
10
20
30
40
50
Collector-to-Emitter Voltage, VCE -- V
ITR03367
Collector-to-Emitter Voltage, VCE -- V
ITR03368
No.1942-2/6
2SA1391 / 2SC3382
--50
IC -- VCE
--400µA
--350µA
--300µA
50
µ
--2
A
A
--200
µ
2SA1391
50
IC -- VCE
A
0
µ
30
µ
A
250
µ
A
200
2SC3382
Collector Current, IC -- mA
--150
µA
--30
Collector Current, IC -- mA
--40
40
150
µ
30
A
--100µA
--20
100
µ
A
20
--50µA
--10
50
µ
A
10
0
IB=0
µA
0
--0.2
--0.4
--0.6
--0.8
--1.0
0
IB=0
µA
0
0.2
0.4
0.6
0.8
1.0
Collector-to-Emitter Voltage, VCE -- V
ITR03369
--240
IC -- VBE
Collector-to-Emitter Voltage, VCE -- V
ITR03370
120
IC -- VBE
2SA1391
VCE=
--6V
2SC3382
VCE=6V
Ta=120
°
C
--40
°
C
25
°
C
--200
100
Collector Current, IC -- mA
Collector Current, IC -- mA
Ta=120
°
C
--160
80
--120
60
--80
40
--40
20
0
0
0.2
0.4
0.6
0.8
1.0
1.2
ITR03371
0
0
0.2
0.4
0.6
0.8
--40
°
C
25
°
C
1.0
ITR03372
Base-to-Emitter Voltage, VBE -- V
5
f T -- IC
Base-to-Emitter Voltage, VBE -- V
1000
7
f T -- IC
Gain-Bandwidth Product, f T -- MHz
3
2
Gain-Bandwidth Product, f T -- MHz
2SA1391
VCE= --6V
2SC3382
VCE=6V
5
3
2
100
7
5
3
2
100
7
5
3
2
10
5
7 --1.0
2
3
5
7 --10
2
3
Collector Current, IC --
1000
7
5
7 --100
2 3
ITR03373
mA
5
10 5
7 1.0
2
3
5
7
10
2
3
5
hFE -- IC
Collector Current, IC -- mA
3
7 100
2
ITR03374
hFE -- IC
Ta=120
°
C
2SA1391
VCE= --6V
2
1000
2SC3382
VCE=6V
DC Current Gain, hFE
DC Current Gain, hFE
3
2
25
°
C
--40
°
C
7
5
3
2
100
7
5
3
2
Ta=120
°
C
25
°
C
100
7
5
3
2
--40
°
C
10
--0.1
2
3
5
--1.0
2 3
5
--10
2 3
5
Collector Current, IC -- mA
--100 2 3 5
ITR03375
10
0.1
2 3
5
1.0
2 3
5
10 2 3
5
100 2
3
Collector Current, IC -- mA
5 1000
ITR03376
No.1942-3/6
2SA1391 / 2SC3382
2
Cob -- VCB
2SA1391
f=1MHz
100
7
5
Cob -- VCB
2SC3382
f=1MHz
Output Capacitance, Cob -- pF
Output Capacitance, Cob -- pF
5
2
3
5
2
3
5
2
3
5
10
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
3
2
1.0
7
5
--0.1
--1.0
--10
--100
ITR03377
5
0.1
2
3
5
1.0
2
3
5
10
2
3
Collector-to-Base Voltage, VCB -- V
--10
5
VCE(sat) -- IC
Collector-to-Base Voltage, VCB -- V
1000
7
5
100
ITR03378
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2SA1391
hFE=10
2SC3382
hFE=10
3
2
--1.0
5
3
2
--0.1
5
3
2
2
3
5
2
3
5
2
3
5
--100 2 3
ITR03379
5
3
2
100
7
5
3
2
10
0.1
--0.01
--0.1
--1.0
--10
2 3
5
1.0
2 3
5
10
2 3
5
100
2 3
5
Collector Current, IC -- mA
10
7
VBE(sat) -- IC
Collector Current, IC -- mA
600
ITR03380
PC -- Ta
2SA1391 / 2SC3382
hFE=10
2SA1391 / 2SC3382
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Collector Dissipation, PC -- mW
(For PNP, minus sign is omitted)
2 3
5
1.0
2 3
5
10
2
3
5
100 2 3
ITR03381
5
500
3
2
400
300
1.0
7
5
200
100
3
0.1
0
0
20
40
60
80
100
120
140
160
Collector Current, IC -- mA
7
5
3
Ambient Temperature, Ta --
°
C
1000
5
3
ITR03382
ASO
ASO
2SC3382
ICP=400mA
IC=200mA
DC
ope
r
ICP=
--400mA
IC=
--200mA
2SA1391
Collector Current, IC -- A
Collector Current, IC -- A
2
--100
7
5
3
2
--10
7
5
3
1
1m
10
0ms
s
0m
s
2
100
5
3
2
10
5
3
2
DC
100
ms
ms
atio
n
10
1m
s
op
era
t
ion
2
--1.0
Ta=25°C
Single pulse
2
3
5
7
--10
2
3
5
Ta=25°C
Single pulse
2
3
5
7
10
2
3
5
Collector-to-Emitter Voltage, VCE -- V
--100
ITR03383
7
1.0
1.0
Collector-to-Emitter Voltage, VCE -- V
7 100
ITR03384
No.1942-4/6
2SA1391 / 2SC3382
100k
5
3
2
2SA1391
NF -- Rg, IC
Signal Source Registance, Rg --
Ω
f=10Hz
∆f=1
Hz
VCE=
--6V
100k
5
NF -- Rg, IC
2SC3382
VCE=6V
f=10Hz
14
Signal Source Registance, Rg --
Ω
B
8d
dB
B
12
6d
B
4d
3
2
dB
15
B
8d
dB
NF
10k
10k
5
3
2
1.0k
5
3
2
dB
=1
B
4d
B
3d
B
2d
B
2d
5
3
2
1.0k
5
3
2
0.1k
3
=1
.5d
2d
B
B
3d
4d
B
B
8d
15
dB
5
--0.01
2
3
5
NF
2d
4d
6d
8d
B
B
B
B
dB
12
B
14
dB
--0.1
2
3
5
Collector Current, IC -- mA
100k
5
3
2
10k
2 3
--1.0
ITR03385
0.1k
0.001 2 3 5
0.01
2 3
5
0.1
2 3
5
1.0
2 3
Signal Source Registance, Rg --
Ω
Signal Source Registance, Rg --
Ω
2SA1391
f=100Hz
∆f=1
Hz
VCE=
--6V
NF -- Rg, IC
Collector Current, IC -- mA
100k
5 10
ITR03386
NF -- Rg, IC
5
3
2
2SC3382
VCE=6V
f=100Hz
dB
15
B
8d
B
6d
B
4d
dB
10
B
8d
B
6d
B
4d
dB
=1
NF
10k
5
3
2
1.0k
5
3
2
2d
NF
B
5
3
2
1.0k
5
3
2
0.1k
3
2d
B
6d
B
8d
B
NF
=1
dB
2d
B
2d
B
=1
dB
4d
B
12
14
dB
4d
6d
B
8d
B
B
dB
15d
5
B
--0.01
2
3
5
--0.1
2
3
5
Collector Current, IC -- mA
100k
5
2 3
--1.0
ITR03387
0.1k
0.001 2 3
5
0.01 2 3
5
0.1 2 3
5
1.0
2 3
Collector Current, IC -- mA
100k
5
3
2
10k
5
3
2
1.0k
5
3
2
5 10
ITR03388
Signal Source Registance, Rg --
Ω
3
2
10k
5
3
2
1.0k
5
3
2
0.1k
3
B
Signal Source Registance, Rg --
Ω
2SA1391
f=
∆
f
1kH
V =1H
z
CE
z
=
--6
V
NF -- Rg, IC
15
NF -- Rg, IC
2SC3382
VCE=6V
f=1kHz
dB
8d
2d
B
1d
B
4d
B
8d
B
6d
dB
4
NF
B
B
2d
dB
=1
NF
NF
1d
2d
=1
=0
B
.7d
2d
dB
B
B
B
4d
B
6d
8d
B
B
4d
B
15
dB
--0.01
8d
2
B
3
5
--0.1
2
3
5
2 3
--1.0
ITR03389
14
dB
12
dB
5
0.1k
0.001 2 3 5
0.01 2 3
5
0.1 2 3
5
1.0
2 3
5
10
Collector Current, IC -- mA
100k
5
3
2
10k
5
3
2
1.0k
5
3
2
0.1k
3
2SA1391
NF -- Rg, IC
Collector Current, IC -- mA
100k
ITR03390
15
8d
dB
Signal Source Registance, Rg --
Ω
Signal Source Registance, Rg --
Ω
5
3
2
10k
5
3
2
1.0k
5
3
2
2SC3382
VCE=6V
f=1kHz
NF
=
NF -- Rg, IC
B
8d
B
6d
B
4d
NF
=0
.5d
B
0.7
1d
dB
B
B
NF
B
.5d
=0
B
2d
4d
B
1d
B
2d
1d
B
0.
7d
B
B
0.5
dB
2d
B
4d
B
15
1d
2d
B
B
4d
B
6d
B
8d
B
dB
--0.01
8d
B
2
3
5
--0.1
2
f=10kHz,
∆f=1
Hz
VCE=
--6V
3
5
2 3
--1.0
ITR03391
5
0.1k
0.001 2 3 5
0.01 2 3
5
0.1 2
3 5
1.0
2 3
Collector Current, IC -- mA
Collector Current, IC -- mA
5 10
ITR03392
No.1942-5/6
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
