2SD1366
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Outline
UPAK
1
3
2
4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
2SD1366
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
i
C(peak)
*
1
P
C
*
2
Tj
Tstg
Ratings
25
20
5
1
1.5
1
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Notes: 1. PW
≤
10 ms, Duty cycle
≤
20%.
2. Value on the alumina ceramic board (12.5
×
20
×
0.7 mm)
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Symbol
V
(BR)CBO
Min
25
20
5
—
—
85
—
—
—
—
—
0.15
0.9
240
22
Typ
—
—
—
—
Max
—
—
—
0.1
0.1
240
0.3
1.0
—
—
V
V
MHz
pF
Unit
V
V
V
µA
µA
Test conditions
I
C
= 10
µA,
I
E
= 0
I
C
= 1 mA, R
BE
=
∞
I
E
= 10
µA,
I
C
= 0
V
CB
= 20 V, I
E
= 0
V
EB
= 4 V, I
C
= 0
V
CE
= 2 V, I
C
= 0.5 A, Pulse
I
C
= 0.8 A, I
B
= 0.08 A, Pulse
I
C
= 0.8 A, I
B
= 0.08 A, Pulse
V
CE
= 2 V, I
C
= 0.5 A, Pulse
V
CB
= 10 V, I
E
= 0, f = 1 MHz
Collector to emitter breakdown V
(BR)CEO
voltage
Emitter to base breakdown
voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Gain bandwidth product
Collector output capacitance
Note:
Mark
h
FE
AA
85 to 170
AB
120 to 240
V
(BR)EBO
I
CBO
I
EBO
h
FE
*
1
V
CE(sat)
V
BE(sat)
f
T
Cob
1. The 2SD1366 is grouped by h
FE
as follows.
2
2SD1366
Maximum Collector Dissipation Curve
1.2
Collector Power Dissipation P
C
(W)
(on the alumina ceramic board)
Typical Output Characteristics
1,000
Collector Current I
C
(mA)
7
6
5
600
4
3
2
200
1 mA
I
B
= 0
0
100
150
50
Ambient Temperature Ta (°C)
0
0.4
0.8
1.2
1.4
1.6
Collector to Emitter Voltage V
CE
(V)
800
0.8
400
0.4
Typical Transfer Characteristics
1,000
Collector Current I
C
(mA)
300
Ta = 75°C
100
30
10
3
1
0
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage V
BE
(V)
25°C
DC Current Transfer Ratio h
FE
V
CE
= 2 V
5,000
2,000
1,000
500
200
100
50
20
10
5
1
DC Current Transfer Ratio
vs. Collector Current
V
CE
= 2 V
Ta = 75°C
25°C
3
10
30
100 300 1,000
Collector Current I
C
(mA)
3
2SD1366
Collector to Emitter Saturation Voltage V
CE(sat)
(V)
Collector to Emitter Saturation
Voltage vs. Collector Current
0.25
Gain Bandwidth Product f
T
(MHz)
I
C
= 10 IB
0.20
300
V
CE
= 2 V
Gain Bandwidth Product
vs. Collector Current
200
0.15
0.10
100
0.05
Ta = 75°C
25
0
1
3
10
30
100 300 1,000
Collector Current I
C
(mA)
0
10
100
300
30
Collector Current I
C
(mA)
1,000
Collector Output Capacitance vs.
Collector to Base Voltage
Collector Output Capacitance C
ob
(pF)
200
100
50
f = 1 MHz
I
E
=0
20
10
5
1
2
5
10
20
50
Collector to Base Voltage V
CB
(V)
4
Unit: mm
4.5
±
0.1
0.4
1.8 Max
φ
1
1.5
±
0.1
0.44 Max
(2.5)
(1.5)
1.5 1.5
3.0
0.8 Min
0.44 Max
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
(0.4)
0.53 Max
0.48 Max
2.5
±
0.1
4.25 Max
UPAK
—
Conforms
0.050 g
(0.2)
FPGA/CPLD
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