电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

2SC3361-6

产品描述Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CP, 3 PIN
产品类别分立半导体    晶体管   
文件大小44KB,共4页
制造商SANYO
官网地址http://www.semic.sanyo.co.jp/english/index-e.html
下载文档 详细参数 选型对比 全文预览

2SC3361-6概述

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CP, 3 PIN

2SC3361-6规格参数

参数名称属性值
包装说明SMALL OUTLINE, R-PDSO-G3
针数3
Reach Compliance Codeunknow
ECCN代码EAR99
最大集电极电流 (IC)0.15 A
集电极-发射极最大电压50 V
配置SINGLE
最小直流电流增益 (hFE)200
JESD-30 代码R-PDSO-G3
元件数量1
端子数量3
最高工作温度125 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型NPN
最大功率耗散 (Abs)0.15 W
认证状态Not Qualified
表面贴装YES
端子形式GULL WING
端子位置DUAL
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)100 MHz
VCEsat-Max0.4 V
Base Number Matches1

文档预览

下载PDF文档
Ordering number:ENN3217A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1331/2SC3361
High-Speed Switching Applications
Features
· Fast switching speed.
· High breakdown voltage.
· Small-sized package permitting the 2SA1331/
2SC3361-applied sets to be made small and slim.
Package Dimensions
unit:mm
2018B
[2SA1331/2SC3361]
0.5
0.4
3
0.16
0 to 0.1
1
0.95 0.95
2
1.9
2.9
0.8
1.1
0.5
1.5
2.5
( ) : 2SA1331
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
1 : Base
2 : Emitter
3 : Collector
SANYO : CP
Ratings
(–)60
(–)50
(–)5
(–)150
(–)400
(–)40
150
125
–55 to +125
Unit
V
V
V
mA
mA
mA
mW
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Common Base Output Capacitance
Symbol
ICBO
IEBO
hFE
fT
Cob
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
VCE=(–)6V, IC=(–)1mA
VCE=(–)6V, IC=(–)1mA
VCB=(–)6V, f=1MHz
90*
100
(3.5)
2.7
6
200 to 400
Conditions
Ratings
min
typ
max
(–)0.1
(–)0.1
400*
MHz
pF
Unit
µA
µA
* : The 2SA1331/2SC3361 are classified by 1mA h
FE
as follows :
Marking 2SA1331 : O, 2SC3361 : S
h
FE
rank : 4, 5, 6
Rank
hFE
4
90 to 180
5
135 to 270
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
83002TN (KT)/71598HA (KT)/7139MO, TS No.3217-1/4

2SC3361-6相似产品对比

2SC3361-6 2SC3361-4 2SC3361-5 2SA1331-4 2SA1331-6 2SA1331-5
描述 Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CP, 3 PIN Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CP, 3 PIN Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CP, 3 PIN Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, CP, 3 PIN Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, CP, 3 PIN Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, CP, 3 PIN
包装说明 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
针数 3 3 3 3 3 3
Reach Compliance Code unknow unknow unknow unknow unknow unknow
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
最大集电极电流 (IC) 0.15 A 0.15 A 0.15 A 0.15 A 0.15 A 0.15 A
集电极-发射极最大电压 50 V 50 V 50 V 50 V 50 V 50 V
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
最小直流电流增益 (hFE) 200 90 135 90 200 135
JESD-30 代码 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
元件数量 1 1 1 1 1 1
端子数量 3 3 3 3 3 3
最高工作温度 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 NPN NPN NPN PNP PNP PNP
最大功率耗散 (Abs) 0.15 W 0.15 W 0.15 W 0.15 W 0.15 W 0.15 W
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES YES YES
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz
VCEsat-Max 0.4 V 0.4 V 0.4 V 0.4 V 0.4 V 0.4 V
Base Number Matches 1 1 1 1 1 1

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2774  2228  1884  2694  1076  47  6  44  32  30 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved