2SC5376F
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5376F
Audio Frequency General Purpose Amplifier Applications
For Muting and Switching Applications
•
•
Low Collector Saturation Voltage: V
CE (sat) (1)
=
15 mV (typ.)
@I
C
=
10 mA/I
B
=
0.5 mA
High Collector Current: I
C
=
400 mA (max)
Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
15
12
5
400
50
100
125
−55
to 125
Unit
V
V
V
mA
mA
mW
°C
°C
Marking
Type Name
h
FE
Classification
Equivalent Circuit
(top view)
FA
961001EAA1
•
TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in
general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of
the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure
of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please
ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications.
Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook.
•
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
•
The information contained herein is subject to change without notice.
2000-03-23
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2SC5376F
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
I
CBO
I
EBO
h
FE
(Note)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Collector-emitter on resistance
V
CE (sat) (1)
V
CE (sat) (2)
V
BE (sat)
f
T
C
ob
R
on
t
on
0V
Switching time
Storage time
t
stg
INPUT 300
Ω
10
µs
600
Ω
50
Ω
Test Condition
V
CB
=
15 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
2 V, I
C
=
10 mA
I
C
=
10 mA, I
B
=
0.5 mA
I
C
=
200 mA, I
B
=
10 mA
I
C
=
200 mA, I
B
=
10 mA
V
CE
=
2 V, I
C
=
10 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
I
B
=
1 mA, V
in
=
1 V
rms
, f
=
1 kHz
Min
300
80
Typ.
15
110
0.87
130
4.2
0.9
Max
0.1
0.1
1000
30
250
1.2
mV
mV
V
MHz
pF
Ω
ns
Unit
µA
µA
Turn-on time
OUTPUT
60
Ω
85
V
CC
=
6 V
170
ns
V
BB
= −3
V
Falll time
t
f
Duty Cycle
<
2%
=
IB1
= −IB2 =
5 mA
40
ns
Note: h
FE
Classification
A: 300 to 600, B: 500 to 1000
2000-03-23
2/4
2SC5376F
I
C
– V
CE
1.0
Common emitter
Ta
=
25°C
0.8
10000
5000
3000
h
FE
– I
C
Common emitter
VCE
=
2 V
(A)
5
4
3
2
DC current gain h
FE
6
0.6
Collector current I
C
1000
500
300
Ta
=
100°C
25
−25
0.4
1
0.2
IB
=
0.5 mA
100
50
30
0
0
1
2
3
4
5
10
0.1
0.3
1
3
10
30
100
300
1000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
V
CE (sat)
– I
C
1000
Common emitter
500 IC/IB
=
20
300
50
30
Common emitter
IC/IB
=
20
Ta
=
25°C
10
5
3
V
BE (sat)
– I
C
Collector-emitter saturation voltage
V
CE (sat)
(mV)
100
50
30
Ta
=
100°C
10
5
3
−25
25
Base-emitter saturation voltage
V
BE (sat)
(V)
100
300
1000
1
0.5
0.3
1
0.1
0.3
1
3
10
30
0.1
0.1
0.3
1
3
10
30
100
300 500
Collector current I
C
(mA)
Collector current I
C
(mA)
I
C
– V
BE
1000
500
300
100
C
ob
– V
CB
Collector output capacitance C
ob
(pF)
Common emitter
VCE
=
2V
IE
=
0 A
50
30
f
=
1 MHz
Ta
=
25°C
(mA)
100
Collector current I
C
50
30
Ta
=
100°C
25
−25
10
10
5
3
5
3
1
0.0
0.4
0.8
1.2
1.6
1
0.1
0.3
1
3
10
30
100
Base-emitter voltage V
BE
(V)
Collector-base voltage V
CB
(V)
2000-03-23
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