INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC4294
DESCRIPTION
·High
Breakdown Voltage-
: V
(BR)CBO
= 1500V(Min)
·High
Switching Speed
·High
Reliability
·Built-in
Damper Diode
APPLICATIONS
·Ultrahigh-definition
color display horizontal deflection
output applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
w
.cn
i
em
cs
.is
w
w
VALUE
UNIT
1500
V
800
V
7
V
6
A
16
A
3.0
W
I
C
Collector Current-Continuous
I
CP
Collector Current-Peak
Collector Power Dissipation
@ T
a
=25℃
P
C
Collector Power Dissipation
@ T
C
=25℃
T
J
Junction Temperature
50
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SC4294
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 0.1A; I
B
= 0
800
V
V
CE(
sat
)
V
BE(
sat
)
I
CBO
I
CES
Collector-Emitter Saturation Voltage
I
C
= 5A; I
B
= 1.2A
B
5.0
V
Base-Emitter Saturation Voltage
I
C
= 5A; I
B
= 1.2A
B
1.5
V
μA
Collector Cutoff Current
V
CB
= 800V; I
E
= 0
V
CE
= 1500V; R
BE
= 0
10
Collector Cutoff Current
1.0
mA
I
EBO
Emitter Cutoff Current
h
FE-1
DC current gain
h
FE-2
DC current gain
V
ECF
C-E Diode Forward Voltage
Switching times
t
stg
t
f
Storage Time
w
.cn
i
em
cs
.is
w
w
V
EB
= 4V; I
C
= 0
40
I
C
= 1A; V
CE
= 5V
8
I
C
= 5A; V
CE
= 5V
4
I
F
= 6A
I
C
= 5A, I
B1
= 1A; I
B2
= -2A;
V
CC
= 200V
130
mA
6
2.0
V
3.0
μs
μs
Fall Time
0.3
isc Website：www.iscsemi.cn
2
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