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2SK1875BLTE85R

产品描述TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal
产品类别分立半导体    晶体管   
文件大小268KB,共5页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
下载文档 详细参数 全文预览

2SK1875BLTE85R概述

TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal

2SK1875BLTE85R规格参数

参数名称属性值
包装说明SMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
配置SINGLE
FET 技术JUNCTION
最大反馈电容 (Crss)3 pF
JESD-30 代码R-PDSO-G3
元件数量1
端子数量3
工作模式DEPLETION MODE
最高工作温度125 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型N-CHANNEL
认证状态Not Qualified
表面贴装YES
端子形式GULL WING
端子位置DUAL
晶体管应用AMPLIFIER
晶体管元件材料SILICON
Base Number Matches1

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2SK1875
TOSHIBA Field Effect Transistor
Silicon N Channel Junction Type
2SK1875
High Frequency Amplifier Applications
AM High Frequency Amplifier Applications
Audio Frequency Amplifier Applications
High |Y
fs
|: |Y
fs
| = 25 mS (typ.)
Low C
iss
: C
iss
= 7.5 pF (typ.)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Symbol
V
GDS
I
G
P
D
T
j
T
stg
Rating
−20
10
100
125
−55~125
Unit
V
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
temperature/current/voltage and the significant change in
JEITA
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-2E1B
operating temperature/current/voltage, etc.) are within the
Weight: 0.006 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate leakage current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Symbol
I
GSS
V
(BR) GDS
I
DSS
(Note)
V
GS (OFF)
⎪Y
fs
C
iss
C
rss
Test Condition
V
GS
= −15
V, V
DS
=
0 V
V
DS
=
0 V, I
G
= −100 μA
V
DS
=
5 V, V
GS
=
0 V
V
DS
=
5 V, I
D
=
1
μA
V
DS
=
5 V, V
GS
=
0 V, f
=
1 kHz
V
DS
=
5 V, V
GS
=
0 V, f
=
1 MHz
V
DG
=
5 V, I
D
=
0 A, f
=
1 MHz
Min
−20
6
15
Typ.
25
7.5
2
Max
−1.0
32
−2.5
10
3
Unit
nA
V
mA
V
mS
pF
pF
Note: I
DSS
classification
GR: 6~12 mA, BL: 10~20 mA, V: 16~32 mA
(G)
(
(L)
(V)
) ...... I
DSS
rank marking
1
2007-11-01

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