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2SD892Q

产品描述Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, SC-43A, 3 PIN
产品类别分立半导体    晶体管   
文件大小180KB,共3页
制造商Panasonic(松下)
官网地址http://www.panasonic.co.jp/semicon/e-index.html
下载文档 详细参数 选型对比 全文预览

2SD892Q概述

Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, SC-43A, 3 PIN

2SD892Q规格参数

参数名称属性值
零件包装代码TO-92
包装说明CYLINDRICAL, O-PBCY-W3
针数3
Reach Compliance Codeunknow
ECCN代码EAR99
最大集电极电流 (IC)0.5 A
集电极-发射极最大电压25 V
配置DARLINGTON WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)4000
JEDEC-95代码TO-92
JESD-30 代码O-PBCY-W3
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式CYLINDRICAL
极性/信道类型NPN
最大功率耗散 (Abs)0.4 W
认证状态Not Qualified
表面贴装NO
端子形式WIRE
端子位置BOTTOM
晶体管应用AMPLIFIER
晶体管元件材料SILICON
标称过渡频率 (fT)150 MHz
Base Number Matches1

文档预览

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Transistor
2SD892, 2SD892A
Silicon NPN epitaxial planer type darlington
For low-frequency amplification
Unit: mm
5.0±0.2
4.0±0.2
q
q
s
Absolute Maximum Ratings
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
Collector to
2SD892
(Ta=25˚C)
Ratings
30
60
25
50
5
Unit
V
13.5±0.5
Forward current transfer ratio h
FE
is designed high, which is ap-
propriate to the driver circuit of motors and printer hammer: h
FE
= 4000 to 20000.
A shunt resistor is omitted from the driver.
base voltage
Collector to
2SD892A
2SD892
emitter voltage 2SD892A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
stg
Parameter
nt
in
s
Electrical Characteristics
Collector cutoff current
Emitter cutoff current
Collector to base
voltage
(Ta=25˚C)
Symbol
I
CBO
I
EBO
ce
2SD892
2SD892A
2SD892
2SD892A
V
CBO
V
CEO
V
EBO
h
FE*1
en
Collector to emitter
Emitter to base voltage
ai
nt
voltage
M
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
*1
h
FE
Rank classification
V
CE(sat)
V
BE(sat)
f
T
Pl
e
Forward current transfer ratio
Rank
h
FE
Q
R
4000 ~ 10000 8000 ~ 20000
pl d in
as
an c
e
ed lud
pl
vi
an m m es
si
tf
ed ain ai fo
ol
lo dis dis ten nte llow
ht w c
tp in o co an nan in
:// g nt n ce c g
pa U in tin t e fo
na RL ue ue ype typ ur
so a d t d
e Pr
od
ni bo yp typ
c. u e e
uc
ne t l
d
tl
at
ife
t/s e
cy
c/ st
en in
cl
e
fo
st
rm
ag
at
e.
io
n.
0.45
–0.1
+0.2
M
Di ain
sc te
on na
tin nc
ue e/
d
5.1±0.2
s
Features
0.45
–0.1
+0.2
1.27
1.27
V
V
A
A
1 2 3
2.3±0.2
2.54±0.15
0.75
0.5
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
400
150
mW
˚C
˚C
Internal Connection
C
–55 ~ +150
B
ue
≈200Ω
E
Conditions
min
typ
max
100
100
Unit
nA
nA
V
co
V
CB
= 25V, I
E
= 0
V
EB
= 4V, I
C
= 0
/D
is
I
C
= 100µA, I
E
= 0
I
C
= 1mA, I
B
= 0
30
60
25
50
5
an
V
V
I
E
= 100µA, I
C
= 0
V
CE
= 10V, I
C
= 500mA
*2
4000
20000
2.5
3
I
C
= 500mA, I
B
= 0.5mA
*2
I
C
= 500mA, I
B
= 0.5mA
*2
V
CB
= 10V, I
E
= –50mA, f = 200MHz
150
*2
V
V
MHz
Pulse measurement
1

2SD892Q相似产品对比

2SD892Q 2SD892AQ 2SD892AR 2SD892R
描述 Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, SC-43A, 3 PIN Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, SC-43A, 3 PIN Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, SC-43A, 3 PIN Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, SC-43A, 3 PIN
零件包装代码 TO-92 TO-92 TO-92 TO-92
包装说明 CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3
针数 3 3 3 3
Reach Compliance Code unknow unknow unknow unknow
ECCN代码 EAR99 EAR99 EAR99 EAR99
最大集电极电流 (IC) 0.5 A 0.5 A 0.5 A 0.5 A
集电极-发射极最大电压 25 V 50 V 50 V 25 V
配置 DARLINGTON WITH BUILT-IN RESISTOR DARLINGTON WITH BUILT-IN RESISTOR DARLINGTON WITH BUILT-IN RESISTOR DARLINGTON WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE) 4000 4000 8000 8000
JEDEC-95代码 TO-92 TO-92 TO-92 TO-92
JESD-30 代码 O-PBCY-W3 O-PBCY-W3 O-PBCY-W3 O-PBCY-W3
元件数量 1 1 1 1
端子数量 3 3 3 3
最高工作温度 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 ROUND ROUND ROUND ROUND
封装形式 CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
极性/信道类型 NPN NPN NPN NPN
最大功率耗散 (Abs) 0.4 W 0.4 W 0.4 W 0.4 W
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO NO
端子形式 WIRE WIRE WIRE WIRE
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM
晶体管应用 AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 150 MHz 150 MHz 150 MHz 150 MHz
Base Number Matches 1 1 1 1

 
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