Ordering number : EN2970A
2SC4272
SANYO Semiconductors
DATA SHEET
2SC4272
Features
•
NPN Epitaxial Planar Silicon Transistor
27MHz CB Transceiver Driver Applications
Small size making it easy to provide high-density, small-sized hybrid ICs.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCER
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Mounted on a ceramic board (250mm
✕0.8mm)
2
Conditions
RBE=150Ω
Ratings
75
75
45
5
1.0
1.5
1.3
150
--55 to +150
Unit
V
V
V
V
A
A
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE
Conditions
VCB=40V, IE=0A
VEB=4V, IC=0A
VCE=5V, IC=500mA
60*
Ratings
min
typ
max
1.0
1.0
320*
Unit
μA
μA
Marking : CH
*:
The 2SC4272 is classified by 500mA hFE as follows:
Rank
D
E
hFE
60 to 120
100 to 200
Continued on next page.
F
160 to 320
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
www.semiconductor-sanyo.com/network
31710AA TK IM / 80504TN (PC)/D2598HA (KT)/2219MO, TS No.2970-1/4
2SC4272
Continued from preceding page.
Parameter
Gain-Bandwidth Product
Output Capacitance
Output Power
Collector Efficiency
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Symbol
fT
Cob
PO
ηc
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CER
V(BR)CEO
V(BR)EBO
Conditions
VCE=10V, IC=50mA
VCB=10V, f=1MHz
VCC=12V, f=27MHz, Pin=35mW
See specified Test Circuit.
IC=500mA, IB=50mA
IC=500mA, IB=50mA
IC=10μA, IE=0A
IC=1mA, RBE=150Ω
IC=1mA, RBE=∞
IE=10μA, IC=0A
75
75
45
5
Ratings
min
180
1.0
60
0.2
0.9
0.6
1.2
typ
250
15
1.8
max
Unit
MHz
pF
W
%
V
V
V
V
V
V
Package Dimensions
unit : mm (typ)
7007B-004
Collector Effieiency Test Circuit
~100pF
INPUT 100pF
L2
OUTPUT
L1
2.2μF
0.005
~100Φ
51
0.02
2.2μF 10μF
~100pF
VCC
12V
L1
: 10Φ0.6Φ EC 6T
L2 : 10Φ0.6Φ EC 12T
600
IC -- VCE
mA
1200
IC -- VBE
VCE=5V
500
Collector Current, IC -- mA
400
2.5mA
2.0mA
Collector Current, IC -- mA
3.5
3.0mA
1000
800
300
600
1.5mA
200
1.0mA
0.5mA
400
100
200
0
0
1
2
3
4
IB=0mA
5
ITR06606
0
0
0.2
0.4
0.6
0.8
1.0
1.2
ITR06607
Collector-to-Emitter Voltage, VCE -- V
Base-to-Emitter Voltage, VBE -- V
Ta=75
°
C
25
°
C
--25
°
C
No.2970-2/4
2SC4272
1000
5
3
2
hFE -- IC
VCE=5V
1000
f T -- IC
VCE=10V
Gain-Brandwidth Product, f T -- MHz
2 3
5
2 3
5
2 3
5
7
5
3
2
Ta=75
°C
25
°
C
--25
°
C
DC Current Gain, hFE
100
5
3
2
10
5
3
2
1.0
0.001 2 3
100
7
5
3
2
5
7
2
3
5
7
2
3
5
7 1000
ITR06611
5
0.01
0.1
1.0
Collector Current, IC -- A
100
7
10
ITR06608
1000
10
100
Cob -- VCB
Collector Current, IC -- mA
VCE(sat) -- IC
f=1MHz
IC / IB=10
Output Capacitance, Cob -- pF
5
3
2
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
5
3
2
100
5
3
2
10
5
3
2
°
C
25
5
Ta=7
10
7
5
3
2
°
C
°
C
--25
1.0
5
7
1.0
2
3
5
7
10
2
3
5
Collector-to-Base Voltage, VCB -- V
10
5
7 100
ITR06612
1.0
0.001 2 3
5
0.01
2 3
5
0.1
2 3
5
1.0
2 3
Collector Current, IC -- A
3
2
1.0
5 10
ITR06609
VBE(sat) -- IC
IC / IB=10
ASO
ICP=1.5A
IC=1A
1m
10
DC
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Collector Current, IC -- A
3
2
1.0
5
3
2
0.1
5
3
2
0.01
0.001 2 3
5
2 3
5
2 3
5
2 3
5
s
Ta=
--25
°C
25
°
C
7
5
3
2
0.1
7
5
3
2
0.01
m
s
75
°
C
op
era
tio
n
Ta=25
°
C
Single pulse
Mounted on a ceramic board (250mm
2
✕0.8mm)
5
7
1.0
2
3
5
7
10
2
3
5
0.01
0.1
1.0
Collector Current, IC -- A
1.4
10
ITR06610
PC -- Ta
Collector-to-Emitter Voltage, VCE -- V
7 100
ITR06613
1.2
Collector Dissipation, PC -- W
M
ou
1.0
nt
ed
on
ac
0.8
er
am
ic
b
0.6
oa
rd
(2
5
0m
0.4
m
2
✕
0.
8m
0.2
0
0
20
40
60
80
100
120
m
)
140
160
Ambient Temperature, Ta --
°C
ITR06614
No.2970-3/4
2SC4272
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
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without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of March, 2010. Specifications and information herein are subject
to change without notice.
PS No.2970-4/4
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