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2SK2838(TO-220SM): 产品描述TRANSISTOR 5.5 A, 400 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-10S2B, TO-220SM, 3 PIN, FET General Purpose Power; 产品类别分立半导体晶体管; 文件大小422KB，共6页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/

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2SK2838(TO-220SM)概述

TRANSISTOR 5.5 A, 400 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-10S2B, TO-220SM, 3 PIN, FET General Purpose Power

2SK2838(TO-220SM)规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
零件包装代码	TO-220SM
包装说明	SMALL OUTLINE, R-PSSO-G2
针数	3
Reach Compliance Code	unknow
雪崩能效等级（Eas）	223 mJ
外壳连接	DRAIN
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	400 V
最大漏极电流 (ID)	5.5 A
最大漏源导通电阻	1.2 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-PSSO-G2
元件数量	1
端子数量	2
工作模式	ENHANCEMENT MODE
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	N-CHANNEL
最大脉冲漏极电流 (IDM)	22 A
认证状态	Not Qualified
表面贴装	YES
端子形式	GULL WING
端子位置	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	SWITCHING
晶体管元件材料	SILICON
Base Number Matches	1

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2SK2838

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

2SK2838

Chopper Regulator, DC−DC Converter and Motor Drive

Applications

Low drain−source ON resistance

High forward transfer admittance

Low leakage current

Enhancement mode

: R

DS (ON)

= 0.84

Ω

(typ.)

: |Y

| = 4.4 S (typ.)

Unit: mm

: I

DSS

= 100

μA

(max) (V

= 400 V)

: V

= 2.0 to 4.0 V (V

= 10 V, I

= 1 mA)

Absolute Maximum Ratings

(Ta = 25°C)

Characteristics

Drain−source voltage

Drain−gate voltage (R

= 20 kΩ)

Gate−source voltage

Drain current

(Note 1)

Symbol

DSS

DGR

GSS

stg

Rating

400

±30

5.5

223

5.5

4.0

150

−55

to 150

Unit

°C

Pulse (Note 1)

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

(Note 2)

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

JEDEC

JEITA

TOSHIBA

―

2-10S1B

Weight: 1.5 g (typ.)

Note:

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.)

may cause this product to decrease in the reliability significantly even if the

operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings. Please design the appropriate reliability

upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data

(i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Thermal resistance, channel to case

Thermal resistance, channel to ambient

Symbol

th (ch−c)

th (ch−a)

Max

3.125

83.3

Unit

°C / W

JEDEC

JEITA

TOSHIBA

―

2-10S2B

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: V

= 90 V, T

= 25°C (initial), L = 12.0 mH, R

= 25

Ω,

= 5.5 A

Note 3: Repetitive rating: pulse width limited by maximum channel

temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

Weight: 1.5 g (typ.)

2009-09-29

2SK2838(TO-220SM)相似产品对比

	2SK2838(TO-220SM)	2SK2838(2-10S2B)	2SK2838(2-10S1B)	2SK2838(TO-220FL)
描述	TRANSISTOR 5.5 A, 400 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-10S2B, TO-220SM, 3 PIN, FET General Purpose Power	TRANSISTOR 5.5 A, 400 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10S2B, 3 PIN, FET General Purpose Power	TRANSISTOR 5.5 A, 400 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10S1B, 3 PIN, FET General Purpose Power	TRANSISTOR 5.5 A, 400 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-10S1B, TO-220FL, 3 PIN, FET General Purpose Power
是否无铅	含铅	含铅	含铅	含铅
是否Rohs认证	不符合	不符合	不符合	不符合
包装说明	SMALL OUTLINE, R-PSSO-G2	2-10S2B, 3 PIN	2-10S1B, 3 PIN	IN-LINE, R-PSIP-T3
针数	3	3	3	3
Reach Compliance Code	unknow	unknow	unknow	unknow
雪崩能效等级（Eas）	223 mJ	223 mJ	223 mJ	223 mJ
外壳连接	DRAIN	DRAIN	DRAIN	DRAIN
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	400 V	400 V	400 V	400 V
最大漏极电流 (ID)	5.5 A	5.5 A	5.5 A	5.5 A
最大漏源导通电阻	1.2 Ω	1.2 Ω	1.2 Ω	1.2 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-PSSO-G2	R-PSSO-G2	R-PSIP-T3	R-PSIP-T3
元件数量	1	1	1	1
端子数量	2	2	3	3
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	IN-LINE	IN-LINE
峰值回流温度（摄氏度）	NOT SPECIFIED	240	240	NOT SPECIFIED
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大脉冲漏极电流 (IDM)	22 A	22 A	22 A	22 A
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	NO	NO
端子形式	GULL WING	GULL WING	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE	SINGLE	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1

2SK2838(TO-220SM)

2SK2838(TO-220SM)概述

2SK2838(TO-220SM)规格参数

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