Power Transistors
2SD1894
Silicon NPN triple diffusion planar type darlington
Unit: mm
For power amplification
Complementary to 2SB1254
■
Features
•
Optimum for 60 W HiFi output
•
High forward current transfer ratio h
FE
•
Low collector-emitter saturation voltage V
CE(sat)
•
Full-pack package which can be installed to the heat sink with one
screw
21.0
±0.5
15.0
±0.3
(0.7)
5.0
±0.2
(3.2)
11.0
±0.2
φ
3.2
±0.1
15.0
±0.2
(3.5)
Solder Dip
2.0
±0.2
1.1
±0.1
2.0
±0.1
0.6
±0.2
16.2
±0.5
■
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
T
a
=
25°C
Junction temperature
Storage temperature
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Rating
160
140
5
7
12
70
3
150
−55
to
+150
°C
°C
Unit
V
V
V
A
A
W
1
5.45
±0.3
10.9
±0.5
2
3
1: Base
2: Collector
3: Emitter
EIAJ: SC-92
TOP-3F-A1 Package
Internal Connection
C
B
E
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Symbol
V
CEO
I
CBO
I
CEO
I
EBO
h
FE1
h
FE2 *
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
I
C
=
30 mA, I
B
=
0
V
CB
=
160 V, I
E
=
0
V
CE
=
140 V, I
B
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
5 V, I
C
=
1 A
V
CE
=
5 V, I
C
=
6 A
I
C
=
6 A, I
B
=
6 mA
I
C
=
6 A, I
B
=
6 mA
V
CE
=
10 V, I
C
=
0.5 A, f
=
1 MHz
I
C
=
6 A, I
B1
=
6 mA, I
B2
= −6
mA
V
CC
=
50 V
20
2.5
5.0
2.5
2 000
5 000
30 000
2.5
3.0
V
V
MHz
µs
µs
µs
Min
140
100
100
100
Typ
Max
Unit
V
µA
µA
µA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE2
Q
S
P
5 000 to 15 000 7 000 to 21 000 8 000 to 30 000
Publication date: September 2003
SJD00234BED
1
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•
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•
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