Ordering number : EN1245D
2SB986 / 2SD1348
SANYO Semiconductors
DATA SHEET
2SB986 / 2SD1348
Applications
•
PNP / NPN Epitaxial Planar Silicon Darlington Transistors
50V / 4A Switching Applications
Power supplies, relay drivers, lamp drivers, electrical equipment.
Features
•
•
•
Adoption of FBET and MBIT processes.
Low saturation voltage.
Large current capacity and wide ASO.
Specifications
( ) : 2SB986
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
(--)60
(--)50
(-
-)6
(-
-)4
(-
-)6
1.2
10
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Cob
Conditions
VCB=(--)40V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)2V, IC=(-
-)100mA
VCE=(--)2V, IC=(--)3A
VCE=(--)10V, IC=(--)50mA
VCB=(--)10V
100*
40
150
(39)25
MHz
pF
Ratings
min
typ
max
(--)1.0
(--)1.0
560*
Unit
mA
mA
Continued on next page.
* : The 2SB986 / 2SD1348 are classified by 100mA hFE as follows :
Rank
R
S
T
U
hFE
100 to 200
140 to 280
200 to 400
280 to 560
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
80906EA MS IM / 11504TN (KT) / 92098HA (KT) / 10966TS (KOTO) X-6510 / 4107KI / D12MW, TS No.1245-1/4
2SB986 / 2SD1348
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitterr Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Symbol
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
Conditions
IC=(--)2A, IB=(-
-)100mA, Pulse
IC=(--)2A, IB=(-
-)100mA, Pulse
IC=(--)10µA, IE=0A
IC=(--)1mA, RBE=∞
IE=(-
-)10µA, IC=0A
(--)60
(--)50
(--)6
Ratings
min
typ
(--0.35)0.19
(--)0.94
max
(--0.7)0.5
(--)1.2
Unit
V
V
V
V
V
Package Dimensions
unit : mm (typ)
7515-002
8.0
3.0
4.0
2.7
1.6
0.8
0.8
0.6
1.5
3.0
7.0
11.0
0.5
15.5
1
2
3
1.2
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126
2.4
4.8
--5.0
--4.5
IC -- VCE
2SB986
Pulse
Collector Current, IC -- A
5.0
4.5
IC -- VCE
2SD1348
Pulse
Collector Current, IC -- A
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
--0.2
--0.4
--0.6
--0.8
--
mA
200
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
--10
mA
A
100m
80mA
60mA
--
50mA
40mA
20mA
--20mA
--10mA
--5mA
10mA
5mA
IB=0mA
--1.0
--1.2
--1.4
--1.6
--1.8
--2.0
0
0
0.4
0.8
ITR08810
IB=0mA
1.2
1.6
2.0
ITR08811
Collector-to-Emitter Voltage, VCE -- V
Collector-to-Emitter Voltage, VCE -- V
No.1245-2/4
2SB986 / 2SD1348
--2.0
--1.8
IC -- VCE
m
--14
A
Collector Current, IC -- A
Collector Current, IC -- A
--1.6
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
0
--2
--4
A
--12m
A
--10m
--8mA
2SB986
Pulse
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
IC -- VCE
8mA
7mA
6mA
5mA
4mA
2SD1348
Pulse
--6mA
--4mA
3mA
2mA
1mA
--2mA
0.2
IB=0mA
--6
--8
--10
--12
--14
--16
--18
--20
0
0
2
4
6
8
ITR08812
1.6
1.4
IB=0mA
10
12
14
16
18
20
Collector-to-Emitter Voltage, VCE -- V
--1.6
--1.4
IC -- VBE
Collector-to-Emitter Voltage, VCE -- V
ITR08813
IC -- VBE
2SB986
VCE= --2V
Collector Current, IC -- A
2SD1348
VCE=2V
Collector Current, IC -- A
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
ITR08815
Base-to-Emitter Voltage, VBE -- V
1000
7
5
ITR08814
1000
Base-to-Emitter Voltage, VBE -- V
hFE -- IC
VCE=2V
Gain-Bandwidth Product, f T -- MHz
f T -- IC
7
5
3
2
VCE=10V
DC Current Gain, hFE
3
2
2SB986
2SD1
348
2SD1348
100
7
5
3
2
10
0.01
100
7
5
3
2
2SB9
86
For PNP minus sign is omitted.
2
3
5
7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC -- A
5
3
5 7 10
ITR08816
10
0.01
For PNP minus sign is omitted.
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Cob -- VCB
Collector Current, IC -- A
10000
5 7 10
ITR08817
VCE(sat) -- IC
f=1MHz
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
7
5
3
2
1000
7
5
3
2
100
7
5
3
2
10
0.01
2
3
5
7 0.1
2
IC / IB=20
Output Capacitance, Cob -- pF
2
100
7
5
3
2
986
2SD
1348
2SB
2SB
986
134
2SD
8
10
1.0
For PNP minus sign is omitted.
2
3
5
7
10
2
3
5
For PNP minus sign is omitted.
3
5
7 1.0
2
3
5
Collector to Base Voltage, VCB -- V
100
ITR08818
7
Collector Current, IC -- A
ITR08819
No.1245-3/4
2SB986 / 2SD1348
3
2
VBE(sat) -- IC
IC / IB=20
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
ASO
ICP=6A
IC=4A
DC
1
10
ms
ms
10
0m
s
Single pulse
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
7
5
3
2
Collector Current, IC -- A
10
(T
a=
op
era
tio
25
n
°
C
)
1.0
7
5
3
2
0.01
2
3
5
7 0.1
2SB986 /
2SD13
48
For PNP minus sign is omitted.
2
3
5
7 1.0
2
3
5
0.01
0.1
2SB986 / 2SD1348
For PNP minus sign is omitted.
2
3
5 7 1.0
2
3
5 7 10
2
3
Collector Current, IC -- A
1.4
ITR08820
12
PC -- Ta
Collector-to-Emitter Voltage, VCE -- V
5 7 100
ITR08821
PC -- Tc
2SB986 /
2SD1348
Collector Dissipation, PC -- W
2SB986 /
2SD1348
1.2
Collector Dissipation, PC -- W
10
1.0
8
0.8
No
he
at
s
6
0.6
in
k
4
0.4
0.2
0
0
20
40
60
80
100
120
140
160
2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
ITR08822
Case Temperature, Tc --
°C
ITR08823
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of August, 2006. Specifications and information herein are subject
to change without notice.
PS No.1245-4/4
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