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2SK880YTE85R

产品描述TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal
产品类别分立半导体    晶体管   
文件大小290KB,共4页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
下载文档 详细参数 全文预览

2SK880YTE85R概述

TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal

2SK880YTE85R规格参数

参数名称属性值
包装说明SMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
其他特性LOW NOISE
配置SINGLE
FET 技术JUNCTION
JESD-30 代码R-PDSO-G3
元件数量1
端子数量3
工作模式DEPLETION MODE
最高工作温度125 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型N-CHANNEL
认证状态Not Qualified
表面贴装YES
端子形式GULL WING
端子位置DUAL
晶体管应用AMPLIFIER
晶体管元件材料SILICON
Base Number Matches1

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2SK880
TOSHIBA Field Effect Transistor
Silicon N Channel Junction Type
2SK880
Audio Frequency Low Noise Amplifier Applications
High |Y
fs
|: |Y
fs
| = 15 mS (typ.) at V
DS
= 10 V, V
GS
= 0
High breakdown voltage: V
GDS
=
−50
V
Low noise: NF = 1.0dB (typ.)
at V
DS
= 10 V, I
D
= 0.5 mA, f = 1 kHz, R
G
= 1 kΩ
High input impedance: I
GSS
=
−1
nA (max) at V
GS
=
−30
V
Small package
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Symbol
V
GDS
I
G
P
D
T
j
T
stg
Rating
−50
10
100
125
−55~125
Unit
V
mA
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
JEDEC
JEITA
TOSHIBA
SC-70
2-2E1B
Weight: 0.006 g (typ.)
Marking
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Symbol
I
GSS
V
(BR) GDS
I
DSS
(Note)
V
GS (OFF)
⎪Y
fs
C
iss
C
rss
NF (1)
Noise figure
NF (2)
Test Condition
V
GS
= −30
V, V
DS
=
0
V
DS
=
0, I
G
= −100 μA
V
DS
=
10 V, V
GS
=
0
V
DS
=
10 V, I
D
=
0.1
μA
V
DS
=
10 V, V
GS
=
0, f
=
1 kHz
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
V
DG
=
10 V, I
D
=
0, f
=
1 MHz
V
DS
=
10 V, R
G
=
1 kΩ
I
D
=
0.5 mA, f
=
10 Hz
V
DS
=
10 V, R
G
=
1 kΩ
I
D
=
0.5 mA, f
=
1 kHz
Min
−50
1.2
−0.2
4.0
Typ.
15
13
3
5
1
Max
−1.0
14.0
−1.5
dB
Unit
nA
V
mA
V
mS
pF
pF
Note: I
DSS
classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6.0~14 mA
1
2007-11-01

 
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