Ordering number:ENN2254
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1480/2SC3790
High-Definiton CRT Display
Video Output Applications
Features
· High breakdown voltage (V
CEO
≥300V).
· Small reverse transfer capacitance and excellent high
frequency characteristic
: C
re
=1.8pF (NPN), 2.3pF (PNP).
· Adoption of MBIT process.
Package Dimensions
unit:mm
2042B
[2SA1480/2SC3790]
8.0
1.0
4.0
1.0
1.4
3.3
3.0
1.6
0.8
1.5
3.0
0.8
0.75
7.5
15.5
11.0
0.7
1
2
3
( ) : 2SA1480
4.8
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Peak Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
1.7
2.4
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
Ratings
(–)300
(–)300
(–)5
(–)100
(–)200
1.5
Unit
V
V
V
mA
mA
W
W
Tc=25˚C
7
150
–55 to +150
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE
fT
VCB=(–)200V, IE=0
VEB=(–)4V, IC=0
VCE=(–)10V, IC=(–)10mA
VCE=(–)30V, IC=(–)10mA
40*
150
Conditions
Ratings
min
typ
max
(–)0.1
(–)0.1
320*
MHz
Unit
µA
µA
* : The 2SA1480/2SC3790 are classified by 10mA h
FE
as follows :
Rank
hFE
C
40 to 80
D
60 to 120
E
100 to 200
F
160 to 320
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O3103TN (KT)/71598HA (KT)/4087TA, TS No.2254-1/5
2SA1480/2SC3790
Continued from preceding page.
Parameter
Output Capacitance
Reverse Transfer Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Votage
Symbol
Cob
Cre
VCE(sat)
VBE(sat)
Conditions
VCB=(–)30V, f=1MHz
VCB=(–)30V, f=1MHz
IC=(–)20mA, IB=(–)2mA
IC=(–)20mA, IB=(–)2mA
(–)300
(–)300
(–)5
Ratings
min
typ
2.6
(3.1)
1.8
(2.3)
(–)0.6
(–)1.0
max
Unit
pF
pF
pF
pF
V
V
V
V
V
V(BR)CBO IC=(–)10µA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
V(BR)EBO
IE=(–)10µA, IC=0
--
20
--
18
IC -- VCE
2SA1480
--140
µA
--120
µA
20
18
IC -- VCE
2SC3790
120µA
100µA
Collector Current, IC – mA
Collector Current, IC – mA
--
16
16
14
--100µA
--80µA
--60
µA
--40
µA
--
14
--
12
--
10
--
8
--
6
--
4
--
2
0
0
80µA
12
10
8
6
4
2
60µA
40µA
20µA
--20µA
IB=0
--
1
--
2
--
3
--
4
--
5
--
6
--
7
--
8
--
9
--
10
Collector-to-Emitter Voltage, VCE – V
ITR03783
0
IB=0
0
1
2
3
4
5
6
7
8
9
10
Collector-to-Emitter Voltage, VCE – V
10
9
ITR03784
--
10
--
9
IC -- VCE
2SA1480
--60µA
IC -- VCE
2SC3790
60
µA
50
µA
40
µA
30
µ
A
20
µA
Collector Current, IC – mA
--
7
--
6
--
5
--
4
--
3
--
2
--
1
0
0
Collector Current, IC – mA
--
8
--50
µ
A
--40
µ
A
8
7
6
5
4
3
2
1
--30µA
--20µA
--10µA
10µA
IB=0
0
10
20
30
40
50
60
70
80
90
100
IB=0
--
10
--
20
--
30
--
40
--
50
--
60
--
70
--
80
--
90
--
100
Collector-to-Emitter Voltage, VCE – V
ITR03785
0
Collector-to-Emitter Voltage, VCE – V
120
ITR03786
--
120
--
100
IC -- VBE
2SA1480
VCE=--10V
IC -- VBE
2SC3790
VCE=10V
100
Collector Current, IC – mA
Collector Current, IC – mA
Ta=75
°
C
Ta=75
°
C
25
°
C
25
°C
--
80
--
60
--
40
--
20
0
--25
°
C
80
60
40
20
0
--
0.2
--
0.4
--
0.6
--
0.8
Base-to-Emitter Voltage, VBE – V
--
1.0
ITR03787
0
0
0.2
0.4
0.6
--25
°
C
0.8
1.0
ITR03788
Base-to-Emitter Voltage, VBE – V
No.2254-2/5
2SA1480/2SC3790
1000
7
5
hFE -- IC
2SA1480
VCE=--10V
1000
7
5
3
hFE -- IC
2SC3790
VCE=10V
Ta=75
°C
25
°C
DC Current Gain, hFE
Ta=75
°C
DC Current Gain, hFE
3
2
2
25
°C
--25
°C
100
7
5
3
2
10
7
5
--25
°C
100
7
5
3
2
10
5
7
--
1.0
2
2
5
3
--
10
Collector Current, IC – mA
3
5
7
7
--
100
2
5
7 1.0
2
3
5
7
10
2
3
5
ITR03789
1000
Collector Current, IC – mA
7 100
2
ITR03790
1000
fT -- IC
2SA1480
VCE=--30V
fT -- IC
2SC3790
VCE=30V
Gain-Bandwidth Product, fT – MHz
Gain-Bandwidth Product, fT – MHz
7
5
3
2
7
5
3
2
100
7
5
3
2
100
7
5
3
2
10
5
7
--
1.0
2
2
3
5
--
10
Collector Current, IC – mA
3
5
7
7
--
100
2
10
5
7 1.0
2
3
5
7
10
2
3
5
ITR03791
3
Collector Current, IC – mA
7 100
2
ITR03792
3
2
Cob -- VCB
2SA1480
f=1MHz
Output Capacitance, Cob – pF
Cob -- VCB
2SC3790
f=1MHz
2
Output Capacitance, Cob – pF
10
7
5
3
2
10
7
5
3
2
1.0
7
5
5
7
1.0
7
--
1.0
2
3
5 7
--
100
2
--
10
Collector-to-Base Voltage, VCB -- V
ITR03793
2
3
5
7
5
5
7 1.0
2
3
5
7
Collector-to-Base Voltage, VCB -- V
10
2
3
5
7 100
2
ITR03794
3
Cre -- VCB
Reverse Transfer Capacitance, Cre – pF
3
Cre -- VCB
2SC3790
f=1MHz
Reverse Transfer Capacitance, Cre – pF
2
2SA1480
f=1MHz
2
10
7
5
3
2
10
7
5
3
2
1.0
7
5
5
7
1.0
7
5
5
7 1.0
2
3
5
7
10
2
3
5
7 100
2
--
1.0
2
3
5 7
--
100
2
--
10
Collector-to-Base Voltage, VCB -- V
ITR03795
2
3
5
7
Collector-to-Base Voltage, VCB -- V
ITR03796
No.2254-3/5
2SA1480/2SC3790
--
10
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
2SA1480
IC / IB=10
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
VCE(sat) -- IC
2SC3790
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
7
5
3
2
--
1.0
7
5
3
2
--
0.1
7
5
5
7
--
1.0
2
2
3
5
--
10
Collector Current, IC – mA
3
5
7
7
--
100
2
3
5
7 1.0
2
3
5
7
ITR03797
10
7
Collector Current, IC – mA
10
2
3
5
7 100
2
ITR03798
--
10
7
VBE(sat) -- IC
2SA1480
IC / IB=10
VBE(sat) -- IC
2SC3790
IC / IB=10
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
5
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
5
7
2
2
3
--
10
Collector Current, IC – mA
3
5
7
5
7
2
5
3
2
3
2
--
1.0
7
5
1.0
7
5
3
3
--
1.0
--
100
5
7 1.0
2
3
5
ITR03799
3
Collector Current, IC – mA
7 10
2
3
5
7 100
2
ITR03800
3
2
ASO
ICP=–200mA
s
0
µ
50
s
1m
0ms
1
ASO
ICP=200mA
s
0
µ
50
s
1m
0ms
1
2SA1480
Collector Current, IC – mA
2SC3790
2
Collector Current, IC – mA
--
100
7
5
3
2
IC=–100mA
100
7
5
3
2
IC=100mA
--
10
7
5
3
2
5
7
10
2
3
o
(T
pera
c=
tio
25
n
DC
°
C
op
)
(T
era
a=
ti
25
on
°
C
)
DC
10
7
5
3
(T
c=
25
DC
°
C
op
)
(T
era
a=
tio
25
n
°
C
)
D
C
op
at
er
io
n
5
7
Collector-to-Emitter Voltage, VCE – V
ITR03801
8
7
100
2
3
5
2
5
7
Collector-to-Emitter Voltage, VCE – V
ITR03802
10
2
3
5
7
100
2
3
5
PC -- Ta
2SA1480 / 2SC3790
Collector Dissipation, P
C
– W
6
5
4
3
2
1
0
No hea
t sink
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta – ˚C
ITR03803
No.2254-4/5
2SA1480/2SC3790
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of October, 2003. Specifications and information herein are subject
to change without notice.
PS No.2254-5/5
嵌入式系统
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