UNISONIC TECHNOLOGIES CO., LTD
2SD882S
MEDIUM POWER LOW
VOLTAGE TRANSISTOR
FEATURES
* High current output up to 3A
* Low saturation voltage
* Complement to 2SB772S
NPN SILICON TRANSISTOR
APPLICATIONS
* Audio power amplifier
* DC-DC convertor
* Voltage regulator
ORDERING INFORMATION
Order Number
Lead Free
2SD882SL-x-AA3-R
2SD882SL-x-AB3-R
2SD882SL-x-T92-B
2SD882SL-x-T92-K
2SD882SL-x-T92-R
Halogen Free
2SD882SG-x-AA3-R
2SD882SG-x-AB3-R
2SD882SG-x-T92-B
2SD882SG-x-T92-K
2SD882SG-x-T92-R
Package
SOT-223
SOT-89
TO-92
TO-92
TO-92
Pin Assignment
1
2
3
B
C
E
B
C
E
E
C
B
E
C
B
E
C
B
Packing
Tape Reel
Tape Reel
Tape Box
Bulk
Tape Reel
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
1 of 4
QW-R208-007,F
2SD882S
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
SOT-223
SOT-89
TO-92
DC
Pulse
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(T
A
=25°C, unless otherwise specified )
RATINGS
40
30
5
3
7
0.6
UNIT
V
V
V
A
A
A
1
W
Power Dissipation
P
D
0.5
W
0.75
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
DC Current Gain (Note 1)
h
FE2
Collector-Emitter Saturation Voltage
V
CE(SAT)
Base-Emitter Saturation Voltage
V
BE(SAT)
Current Gain Bandwidth Product
f
T
Output Capacitance
C
OB
Note 1: Pulse test: P
W
<300μs,
Duty Cycle<2%
TEST CONDITIONS
I
C
=100μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=100μA, I
C
=0
V
CB
=30V, I
E
=0
V
EB
=3V, I
C
=0
V
CE
=2V, I
C
=20mA
V
CE
=2V, I
C
=1A
I
C
=2A, I
B
=0.2A
I
C
=2A, I
B
=0.2A
V
CE
=5V, I
C
=0.1A
V
CB
=10V, I
E
=0, f=1MHz
MIN
40
30
5
TYP MAX UNIT
V
V
V
1000 nA
1000 nA
200
150 400
0.3
0.5
V
1.0
2.0
V
80
MHz
45
pF
30
100
CLASSIFICATION OF h
FE2
RANK
RANGE
Q
100-200
P
160-320
E
200-400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R208-007,F
2SD882S
TYPICAL CHARACTERISTICS
Static Characteristics
150
1.6
Collector Current, Ic (A)
I
B
=9mA
I
B
=8mA
Derating, I
C
(%)
1.2
I
B
=7mA
I
B
=6mA
I
B
=5mA
0.8
I
B
=4mA
I
B
=3mA
0.4
0
0
4
8
12
I
B
=2mA
I
B
=1mA
16
20
0
-50
100
NPN SILICON TRANSISTOR
Derating Curve of Safe Operating Areas
S/
b
lim
ite
d
n
io
at
ip
ss
Di
50
lim
ite
d
0
50
100
150
200
Collector-Emitter Voltage (V)
Current Gain-Bandwidth Product
Case Temperature, T
C
(°C)
Safe Operating Area
10
3
Current Gain-
Bandwidth Product, F
T
(MHz)
10
1
1m
0.
10
mS
1m
S
S
10
2
V
CE
=5V
Collector Current, I
C
(A)
10
0
I
C
(max), DC
I
B
=8mA
10
1
10
-1
I
C
(max), Pulse
10
0
10
-2
10
-1
10
0
10
1
10
-2
10
0
10
1
Collector-Emitter Voltage
Saturation Voltage
10
2
Collector Current, Ic (A)
DC Current Gain
10
4
10
3
V
BE(SAT)
Saturation Voltage (mV)
DC Current Gain, h
FE
10
2
10
3
V
CE
=2V
10
2
V
CE(SAT)
10
1
10
1
10
0
10
0
10
1
10
3
10
4
10
0
10
0
10
1
10
2
10
3
10
4
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R208-007,F
2SD882S
TYPICAL CHARACTERISTICS(Cont.)
10
3
Collector Output Capacitance
NPN SILICON TRANSISTOR
Output Capacitance (pF)
10
2
I
E
=0
f=1MHz
10
1
10
0
10
0
10
-1
10
-2
Collector-Base Voltage (V)
10
-3
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 4
QW-R208-007,F
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
