电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

2SK879RTE85L

产品描述TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal
产品类别分立半导体    晶体管   
文件大小286KB,共4页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
下载文档 详细参数 选型对比 全文预览

2SK879RTE85L概述

TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal

2SK879RTE85L规格参数

参数名称属性值
包装说明SMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
其他特性LOW NOISE
配置SINGLE
FET 技术JUNCTION
JESD-30 代码R-PDSO-G3
元件数量1
端子数量3
工作模式DEPLETION MODE
最高工作温度125 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型N-CHANNEL
认证状态Not Qualified
表面贴装YES
端子形式GULL WING
端子位置DUAL
晶体管应用AMPLIFIER
晶体管元件材料SILICON
Base Number Matches1

文档预览

下载PDF文档
2SK879
TOSHIBA Field Effect Transistor
Silicon N Channel Junction Type
2SK879
General Purpose and Impedance Converter and
Condenser Microphone Applications
High breakdown voltage: V
GDS
=
−50
V
High input impedance: I
GSS
=
−1.0
nA (max) (V
GS
=
−30
V)
Low noise: NF = 0.5dB (typ.) (R
G
= 100 kΩ, f = 120 Hz)
Small package
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Symbol
V
GDS
I
G
P
D
T
j
T
stg
Rating
−50
10
100
125
−55~125
Unit
V
mA
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
JEITA
TOSHIBA
SC-70
2-2E1B
Weight: 0.006 g (typ.)
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
Symbol
I
GSS
V
(BR) GDS
I
DSS
(Note)
V
GS (OFF)
⎪Y
fs
C
iss
C
rss
NF
Test Condition
V
GS
= −30
V, V
DS
=
0
V
DS
=
0, I
G
= −100 μA
V
DS
=
10 V, V
GS
=
0
V
DS
=
10 V, I
D
=
0.1
μA
V
DS
=
10 V, V
GS
=
0, f
=
1 kHz
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
V
GD
= −10
V, I
D
=
0, f
=
1 MHz
V
DS
=
15 V, V
GS
=
0
R
G
=
100 kΩ, f
=
120 Hz
Min
−50
0.3
−0.4
1.2
Typ.
8.2
2.6
0.5
Max
−1.0
6.5
−5.0
Unit
nA
V
mA
V
mS
pF
pF
dB
Note: I
DSS
classification
R: 0.30~0.75 mA, O: 0.60~1.40 mA, Y: 1.2~3.0 mA, GR: 2.6~6.5 mA
Marking
1
2007-11-01

2SK879RTE85L相似产品对比

2SK879RTE85L 2SK879OTE85L 2SK879OTE85R 2SK879RTE85R 2SK879GTE85L 2SK879GTE85R 2SK879TE85R 2SK879TE85L 2SK879YTE85R 2SK879YTE85L
描述 TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal
包装说明 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow unknow unknow unknow
其他特性 LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
FET 技术 JUNCTION JUNCTION JUNCTION JUNCTION JUNCTION JUNCTION JUNCTION JUNCTION JUNCTION JUNCTION
JESD-30 代码 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
元件数量 1 1 1 1 1 1 1 1 1 1
端子数量 3 3 3 3 3 3 3 3 3 3
工作模式 DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE
最高工作温度 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES YES YES YES YES YES YES
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
晶体管应用 AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1 1 1 1 1 1 1
求助———基于FPGA的SDRAM读写的串口调试
想问一下,我按照特权同学的那个程序调试SDRAM,串口收到的数据时出现许多F7和FF,求解???86772...
haihu608 FPGA/CPLD
281x DSP无需仿真器,串口烧写Flash方法
考虑到众多买不起仿真器的劳苦大众!下面提供利用PC RS232下载flash到281x的方法: 第一步:安装DSP.com/forum.php?mod=forumdisplay&fid=58" target="_blank" class="relatedlink">CCS2.2或更 ......
fish001 DSP 与 ARM 处理器
坛子里的兄弟姐妹们,大家中午午睡吗?
如题话说---春困秋乏夏打盹,这一年四季貌似都是在昏昏欲睡中度过了。精神不好是万万不利于工作学习的。上班的休息不好下午工作不来劲,上学的休息不好下午课桌成了睡床。这春天到了,大家伙都 ......
liuceone 聊聊、笑笑、闹闹
Xilinx SDK对软件应用的调试需要链接开发板吗
如题,Xilinx SDK对软件应用的调试一定需要链接开发板吗,能否像单纯的硬件设计那样不需要开发板,就能调试并生成最后的比特流文件呢?谢谢 ...
441307320 FPGA/CPLD
请问谁有这款开发板的光盘资料啊?frandly ARM 2410
小弟在实验室找到了几年前师兄留下的ARM9 SBC2410X 开发板,硬件全部设备,包含显示屏 和JTAG 线,但是没有配套的资料说明,正在学习嵌入式linux 的课程,希望能顺便实践一下。 各位朋友: ......
koanzhongxue ARM技术
电子节能灯的十大经验定律
节能灯电子镇流器的设计是照明行业设计的一大难点。很多厂家生产的产品由于质量不过关,给用户造成“节能不节钱”的现象,严重地影响了节能灯的声誉。这其中很大的部分问题是镇流器的质量不过关 ......
zbz0529 电源技术

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1949  2392  1599  997  405  40  49  33  21  9 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved