Ordering number:ENN2969A
NPN Epitaxial Planar Silicon Transistor
2SC4269
VHF Converter,
Local Oscillator Applications
Features
· High power gain
: PG=15dB typ (f=0.4GHz)
· High cutoff frequency : f
T
=1.2GHz typ
Package Dimensions
unit:mm
2018B
[2SC4269]
0.5
0.4
3
0.16
0 to 0.1
1
0.95 0.95
2
1.9
2.9
0.5
1.5
2.5
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Conditions
1 : Base
2 : Emitter
3 : Collector
SANYO : CP
0.8
1.1
Ratings
30
15
3
50
20
250
150
–55 to +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE
VCB=20V, IE=0
VEB=2V, IC=0
VCE=10V, IC=5mA
40*
Conditions
Ratings
min
typ
max
0.1
1
200*
Unit
µA
µA
* : The 2SC4269 is classified by 5mA h
FE
as follows :
Rank
hFE
2
40 to 80
3
60 to 120
4
100 to 200
Continued on next page.
(Note) Marking : JT
h
FE
rank : 2, 3, 4
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
80504TN (PC)/D1598HA (KT)/9219MO/6069MO, TS No.2969–1/4
2SC4269
Continued from preceding page.
Parameter
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Power Gain
Noise Figure
Symbol
fT
Cob
Cre
PG
NF
VCE=10V, IC=10mA
VCB=10V, f=1MHz
VCB=10V, f=1MHz
VCE=10V, IC=10mA, f=0.4GHz
VCE=10V, IC=3mA, f=0.4GHz
Conditions
Ratings
min
0.6
typ
1.2
0.75
0.5
15
2.0
1.1
max
Unit
GHz
pF
pF
dB
dB
PG, NF Test Circuit
3
VB
1
VCC
f=400MHz
2kΩ
CH
L2
INPUT
C1
C2
L1
C3
C4
L3
C5
OUTPUT
C1
C2
C3
C4
C5
L1
L2
L3
to 20pF
to 10pF
to 10pF
to 20pF
to 30pF
2φ, l=40mm 2/3t
2φ, l=40mm 2/3t
1φ, l=40mm 1/2t
2
3
2
hFE -- IC
VCE=10V
5
f T -- IC
VCE=10V
Gain-Bandwidth Product, fT – GHz
3
2
DC Current Gain, hFE
100
7
5
3
2
1.0
7
5
3
2
10
7
5
5
7 1.0
2
3
5
7 10
2
3
5
7 100
2
ITR06577
0.1
7
5
5
7
Collector Current, IC – mA
1.0
2
3
5
7
10
2
3
5
Collector Current, IC – mA
20
7 100
ITR06578
3
Cob, Cre -- VCB
f=1MHz
PG -- IC
f=0.4GHz
VCE=10V
Output Capacitance, Cob – pF
Reverse Transfer Capacitance, Cre – pF
2
16
1.0
7
5
3
2
Cob
Power Gain, PG – dB
12
Cre
8
0.1
7
5
5
7
1.0
2
3
5
7
10
2
3
5
4
0
Collector-to-Base Voltage, VCB -- V
100
ITR06579
7
5
7
1.0
2
3
5
7
Collector Current, IC – mA
10
2
3
5
100
ITR06580
7
No.2969–2/4
2SC4269
10
NF -- IC
f=0.4GHz
VCE=10V
300
PC -- Ta
8
Collector Dissipation, P
C
– mW
5
7
2
3
5
7
2
3
5
7
250
Noise Figure, NF – dB
200
6
150
4
100
2
50
0
1.0
10
0
Collector Current, IC – mA
100
ITR06581
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta – ˚C
ITR06582
S parameter
S11e : VCE=10V
f=100MHz, 200 to 1200MHz(200MHz step)
j1
j0.5
j2
j3
j0.2
j4
j5
S12e : VCE=10V
f=100MHz, 200 to 1200MHz(200MHz step)
90
°
120
°
60
°
1.2GHz
150
°
30
°
IC=20mA
±180°
IC=5mA
1.2GHz
0
0.2
0.5
1
2
5
0.1GHz
0.04 0.08 0.12 0.16 0.20
0
IC=20mA
--j0.2
0.1GHz
IC=5mA
0.1GHz
--j0.5
--j1
--j2
--j5
--j4
--j3
--150
°
--30
°
--120
°
ITR06583
--60
°
--90
°
ITR06584
S21e : VCE=10V
f=100MHz, 200 to 1200MHz(200MHz step)
S22e : VCE=10V
f=100MHz, 200 to 1200MHz(200MHz step)
j1
j0.5
j2
j3
j0.2
j4
j5
0.1GHz
120
°
90
°
60
°
150
°
0.1GHz
IC=20mA
30
°
IC=5mA
1.2GHz
2
4
6
8
10
±180°
0
0
0.2
0.5
1
2
5
0.1GHz
IC=20mA
--j0.2
--150
°
--30
°
IC=5mA
--j5
--j4
1.2GHz
--j3
--j2
--120
°
--90
°
--60
°
ITR06585
--j0.5
--j1
ITR06586
No.2969–3/4
2SC4269
S parameter
(Common emitter)
V
CE
=10V, I
C
=5mA, Z
O
=50Ω
Freq (MHz)
100
200
400
600
800
1000
1200
| S11 |
0.703
0.529
0.543
0.538
0.541
0.550
0.561
∠
S11
–69.5
–111.8
–152.3
–166.4
–175.3
177.0
171.4
| S21 |
7.836
5.462
3.089
2.123
1.626
1.332
1.144
∠
S21
133.2
111.6
89.2
78.2
69.3
63.2
57.1
| S12 |
0.022
0.029
0.036
0.046
0.061
0.082
0.107
∠
S12
56.2
49.5
59.4
74.4
86.1
93.7
96.9
| S22 |
0.873
0.809
0.771
0.767
0.766
0.768
0.773
∠
S22
–10.4
–12.1
–15.2
–19.6
–25.0
–29.7
–35.4
V
CE
=10V, I
C
=20mA, Z
O
=50Ω
Freq (MHz)
100
200
400
600
800
1000
1200
| S11 |
0.521
0.517
0.532
0.544
0.565
0.583
0.597
∠
S11
–127.8
–153.4
–169.8
–177.2
176.9
172.2
167.0
| S21 |
12.130
6.656
3.328
2.236
1.655
1.334
1.129
∠
S21
109.6
94.7
79.1
69.2
60.5
54.4
48.4
| S12 |
0.014
0.020
0.032
0.047
0.065
0.087
0.114
∠
S12
56.2
64.9
77.9
86.8
94.8
99.7
101.2
| S22 |
0.783
0.753
0.745
0.751
0.761
0.769
0.776
∠
S22
–9.5
–9.2
–12.4
–17.4
–23.1
–28.1
–34.0
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of August, 2004. Specifications and information herein are subject to
change without notice.
PS No.2969–4/4
ARM技术
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