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2SC5277-D2

产品描述RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN, ULTRA SMALL, SMCP, 3 PIN
产品类别分立半导体    晶体管   
文件大小52KB,共5页
制造商SANYO
官网地址http://www.semic.sanyo.co.jp/english/index-e.html
下载文档 详细参数 选型对比 全文预览

2SC5277-D2概述

RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN, ULTRA SMALL, SMCP, 3 PIN

2SC5277-D2规格参数

参数名称属性值
Objectid1740938751
包装说明SMALL OUTLINE, R-PDSO-G3
针数3
Reach Compliance Codeunknown
ECCN代码EAR99
YTEOL0
外壳连接COLLECTOR
最大集电极电流 (IC)0.03 A
基于收集器的最大容量0.7 pF
集电极-发射极最大电压10 V
配置SINGLE
最小直流电流增益 (hFE)90
最高频带S BAND
JESD-30 代码R-PDSO-G3
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型NPN
最大功率耗散 (Abs)0.1 W
认证状态Not Qualified
表面贴装YES
端子形式GULL WING
端子位置DUAL
晶体管应用AMPLIFIER
晶体管元件材料SILICON
标称过渡频率 (fT)11000 MHz

文档预览

下载PDF文档
Ordering number:ENN5187
NPN Epitaxial Planar Silicon Transistor
2SC5277
UHF to S Band Low-Noise Amplifier,
OSC Applications
Features
· Low noise : NF=0.9dB typ (f=1GHz).
: NF=1.4dB typ (f=1.5GHz).
· High gain :
S21e
2
=10dB typ (f=1.5GHz).
· High cutoff frequency : f
T
=11GHz typ.
· Low-voltage, low-current operation
(V
CE
=1V, I
C
=1mA)
: f
T
=7GHz type.
:
S21e
2
=5.5dB typ (f=1.5GHz).
· Ultrasmall package permitting applied sets to be
small and slim.
Package Dimensions
unit:mm
2106A
[2SC5277]
0.3
0.4
0.75
0.6
3
0 to 0.1
0.8
1.6
1
0.5
1.6
2
0.5
0.1
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
1 : Base
2 : Emitter
3 : Collector
SANYO : SMCP
Ratings
20
10
1.5
30
100
150
–55 to +150
0.1max
0.2
0.4
Unit
V
V
V
mA
mW
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Symbol
ICBO
IEBO
hFE
fT1
fT2
Cob
Cre
VCB=10V, IE=0
VEB=1V, IC=0
VCE=5V, IC=10mA
VCE=5V, IC=10mA
VCE=1V, IC=1mA
VCB=10V, f=1MHz
VCB=10V, f=1MHz
60*
8
11
7
0.45
0.30
0.7
Conditions
Ratings
min
typ
max
1.0
10
270*
GHz
GHz
pF
pF
Unit
µA
µA
* : The 2SC5277 is classified by 10mA h
FE
as follows :
Marking
hFE
D1
60 to 120
D2
90 to 180
D3
135 to 270
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30105TN (PC)/21599TH (KT)/83095YK (KOTO) TA-0413 No.5187–1/5

2SC5277-D2相似产品对比

2SC5277-D2 2SC5277-D3 2SC5277-TL 2SC5277-D1
描述 RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN, ULTRA SMALL, SMCP, 3 PIN RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN, ULTRA SMALL, SMCP, 3 PIN RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN, ULTRA SMALL, SMCP, 3 PIN RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN, ULTRA SMALL, SMCP, 3 PIN
Objectid 1740938751 1740938752 1417104623 1740938750
包装说明 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
针数 3 3 3 3
Reach Compliance Code unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99
外壳连接 COLLECTOR COLLECTOR COLLECTOR COLLECTOR
最大集电极电流 (IC) 0.03 A 0.03 A 0.03 A 0.03 A
基于收集器的最大容量 0.7 pF 0.7 pF 0.7 pF 0.7 pF
集电极-发射极最大电压 10 V 10 V 10 V 10 V
配置 SINGLE SINGLE SINGLE SINGLE
最高频带 S BAND S BAND S BAND S BAND
JESD-30 代码 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
元件数量 1 1 1 1
端子数量 3 3 3 3
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 NPN NPN NPN NPN
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES
端子形式 GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL
晶体管应用 AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 11000 MHz 11000 MHz 11000 MHz 11000 MHz
最小直流电流增益 (hFE) 90 135 - 60
最高工作温度 150 °C 150 °C - 150 °C
最大功率耗散 (Abs) 0.1 W 0.1 W - 0.1 W

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