Datasheet> 器件分类 > 分立半导体> 晶体管> 2SK1858TE24R

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2SK1858TE24R: 产品描述TRANSISTOR 3 A, 800 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power; 产品类别分立半导体晶体管; 文件大小82KB，共2页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/

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2SK1858TE24R概述

TRANSISTOR 3 A, 800 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power

2SK1858TE24R规格参数

参数名称	属性值
包装说明	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknow
外壳连接	DRAIN
配置	SINGLE
最小漏源击穿电压	800 V
最大漏极电流 (ID)	3 A
最大漏源导通电阻	5 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-PSSO-G2
元件数量	1
端子数量	2
工作模式	ENHANCEMENT MODE
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	N-CHANNEL
功耗环境最大值	60 W
认证状态	Not Qualified
表面贴装	YES
端子形式	GULL WING
端子位置	SINGLE
晶体管应用	SWITCHING
晶体管元件材料	SILICON
Base Number Matches	1

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2SK1858TE24R相似产品对比

	2SK1858TE24R	2SK1858TE24L	2SK2089TE24R	2SK2089TE24L	2SK1929TE24R	2SK1929TE24L
描述	TRANSISTOR 3 A, 800 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power	TRANSISTOR 3 A, 800 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power	TRANSISTOR 5 A, 800 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power	TRANSISTOR 5 A, 800 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power	TRANSISTOR 5 A, 900 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power	TRANSISTOR 5 A, 900 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
包装说明	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow
外壳连接	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最小漏源击穿电压	800 V	800 V	800 V	800 V	900 V	900 V
最大漏极电流 (ID)	3 A	3 A	5 A	5 A	5 A	5 A
最大漏源导通电阻	5 Ω	5 Ω	2.4 Ω	2.4 Ω	2.8 Ω	2.8 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
元件数量	1	1	1	1	1	1
端子数量	2	2	2	2	2	2
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
功耗环境最大值	60 W	60 W	80 W	80 W	100 W	100 W
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES	YES
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1	1	1

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器件捷径: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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