2SB772
2SD882
PNP/NPN Epitaxial Planar Transistors
* “G” Lead(Pb)-Free
TO-126
1. EMITTER
2.COLLECTOR
3.BASE
1
2
3
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Total Device Disspation T
A
=25 C
Total Device Dissipation Tc=25 C
Junction Temperature
Storage, Temperature
(1)
Symbol
VCEO
VCBO
VEBO
IC(DC)
IC (Pulse)
IB(Pulse)
PD
PD
Tj
Tstg
PNP/2SB772
-30
-40
-5.0
-3.0
-7.0
-0.6
NPN/2SD882
30
40
5.0
3.0
7.0
0.6
1.0
10
150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
W
W
C
C
-55 to +150
Device Marking
2SB772=B772 ,
2SD882=D882
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage (IC= -10/10 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= -100/100 µAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= -100/100 µAdc, IC=0)
Collector Cutoff Current (VCE= -30/30 Vdc, I B =0)
Collector Cutoff Current (VCB= -40/40 Vdc, IE=0)
Emitter Cutoff Current (VEB= -6.0/6.0Vdc, I C =0)
NOTE: 1.PW 350us, duty cycle 2%
Symbol
Min
Max
-
-
-
-1.0/1.0
-1.0/1.0
-1.0/1.0
Unit
Vdc
Vdc
Vdc
uAdc
uAdc
uAdc
V(BR)CEO -30/30
V(BR)CBO -40/40
V(BR)EBO -5.0/5.0
ICE0
ICBO
IEBO
-
-
-
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2SB772
2SD882
ELECTRICAL CHARACTERISTICS
(TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
TYP
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC= -1.0/1.0 Adc, VCE=-2.0/2.0Vdc)
DC Current Gain
(IC= -100/100 mAdc, VCE= -2.0/2.0 Vdc)
Collector-Emitter Saturation Voltage
(IC= -2.0/2.0 Adc, IB= -0.2/0.2mAdc)
Base-Emitter Saturation Voltage
(IC= -2.0/2.0 Adc, IB= -0.2/0.2mAdc)
Current-Gain-Bandwidth Product
(IC= -0.1/0.1 mAdc, VCE=-5.0/5.0 Vdc, f=10MHz)
hFE
(1)
hFE
(2)
VCE(sat)
VBE(sat)
fT
60
32
-
-
-
-
-
-
-
400
-
-0.5/0.5
-2.0/2.0
-
-
Vdc
Vdc
80/90
-
MHz
Classification of hFE(1)
Rank
Range
R
60-120
O
100-200
Y
160-320
GR
200-400
WEITRON
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2SB772
2SD882
F1. Total Power Dissipation VS.
Ambient Temperature
NOTE
F.2 Derating Curve for All Types
dT-Percentage of Rated Current-%
PT-Total Power Dissipation-W
10
8
6
4
2
0
10
25
9 cm
2
1. Aluminum heat sink
of 1.0 mm thickness.
2. With no insulator film.
3. With silicon compound.
100
80
60
40
20
0
0
50
S/
bl
im
i
ted
ti
pa
si
is
D
cm
2
0c
m
ite
fin
in
at
he
nk
si
2
on
lim
ite
d
Without heat sink
50
100
150
100
150
Ta-Amient Temperature-°C
Tc,Case Temperature(°C)
F4. Safe Operating Areas
10
F3. Thermal Resistance VS.
Pulse Width
4Rth-Thermal Resistance- C/W
°
30
10
-Ic,Collector Current(A)
V
CE
=10V
IC =1.0A
Duty=0.001
PW
-
(
Duty
<
10 ms50 %
)
P
Cycle
<
-
Ic(max),Pulse
Ic(max),DC
10
3
mS
1m
S
W
=1
00
1
1
0.1
0.3
0.03
0.01
NOTE
1. Tc=25 C
2. Curves must be derated
linearly with increase of
temperature and Duty Cycle.
1
3
6
10
0.1
0.3
1
3
10
30
100
300
1000
30
VCEO MAX
60
3
0.3
Di
s
L sipa
(S
ing
imite tion
d
le
no
nr
s/b
ep
Lim
eti
tiv
ite
ep
d
uls
e)
PW-Pulse Width-ms
VCE-Collector to Emitter Voltage-V
S
1m
0.
us
100
F5. Collector Current VS. Collector
To Emitter Voltage
-2.0
2SB772
2SD882
F6. Collector Current VS. Collector
To Emitter Voltage
2.0
-Ic,Collector Current(A)
-Ic,Collector Current(A)
-1.6
-1.2
Pulse Test
IB=-10mA
IB=-9mA
IB=-8MA
IB=-7mA
IB=-6mA
IB=-5mA
IB=-4mA
IB=-3mA
IB=-2mA
IB=-1mA
0
Pulse Test
IB=10mA
IB=9mA
IB=8MA
IB=7mA
IB=6mA
IB=5mA
IB=4mA
IB=3mA
IB=2mA
IB=1mA
0
1.6
1.2
-0.8
0.8
-0.4
0.4
0
-4
-8
-12
-16
-20
0
v
CE -Collector-Emitter Voltage(V)
4
8
12
16
20
v
CE -Collector-Emitter Voltage(V)
WEITRON
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2SB772
2SD882
V
CE(sat)
-Collector Saturation Voltage(V)
F7.
1000
600
V
BE(sat)
-Base Saturation Voltage(V)
h
FE
, V
BE
-I c
F8. V
CE(sat)
, V
BE(sat)
,-Ic
10
6
3
1
0.6
0.3
0.1
0.06
0.03
0.01
0.006
0.003
hFE , -DC Current Gain
2SB772
h
FE
V
CE
=2.0V
Puse Test
300
100
60
30
10
6
3
1
0.001 0.003 0.01
V
BE
(sat)
2SB772
2SD882
2SD882
t)
sa
V
BE
2SB772
2SD882
2SB772
V
C
E
(
2SD
882
0.03
0.1
0.3
1
3
10
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10
Ic-Collector Current(A)
Ic-Collector Current(A)
F9. f
T
- I
c
f
T
-Gain Bandwidth Product(MHZ)
1000
F10. C
ob
-V
CB
, C
ib
-V
CE
Cob-Output Capacitance(P
F
)
Cib-Input Capacitance(P
F
)
300
100
V
CE
=5.0V
Forecd air
Cooling
(with heat sink)
300
100
60
30
2SD8
82
2SB77
2
Cib
f=1.0MHz
I
E
=0(Cob)
I
C
=0(Cib)
2SB772
2SD882
2SB77
2
30
10
2SD8
82
Cob
10
6
3
3
1
0.01
1
3
6
10
30
60
0.03
0.1
0.3
1
V
CB
-Collector to Base Voltage(V)
V
EB
-Emitter to Base Voltage(V)
Ic-Collector Cu
rrent(A)
WEITRON
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2SB772
2SD882
TO-126 Outline Dimensions
unit:mm
G
B
A
H
D
L
J
K
M
C
E
S
φ
Dim
A
B
C
D
E
G
H
J
K
L
M
S
TO-126
φ
MAX
Min
2.500
2.900
1.100
1.500
0.660
0.860
1.170
1.370
0.450
0.600
7.400
7.800
10.600
11.000
2.290TYP
4.480
4.680
15.300
15.700
2.100
2.300
3.900
4.100
3.200
3.000
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