Ordering number : EN2093A
2SA1479 / 2SC3789
SANYO Semiconductors
DATA SHEET
PNP / NPN Epitaxial Planar Silicon Transistors
2SA1479 / 2SC3789
Applications
•
•
High-Definition CRT Display
Video Output Applications
High-definition CRT display.
Color TV chroma output, high breakdown voltage drivers.
Features
•
•
•
•
•
•
High breakdown voltage : VCEO
≥300V.
Excellent high frequency characteristic : Cre=1.8pF (typ).
Adoption of MBIT process.
No insulator required for mounting, which contributes to reducing the cost and the number of manufacturing
processes.
Plastic-covered heat sink facilitating high-density mounting.
Directly interchange able with TO-126 because the package is designed based on the conventional package
dimensions.
Specifications
( ) : 2SA1479
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
(--)300
(--)300
(--)5
(--)100
(--)200
1.5
7
150
--55 to +150
Unit
V
V
V
mA
mA
W
W
°C
°C
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
www.semiconductor-sanyo.com/network
10709CB MS IM TC-00001817 / O3103TN (KT)/71598HA (KT)/4087TA, TS No.2093-1/5
2SA1479 / 2SC3789
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Output Capacitance
Reverse Transfer Capacitance
Symbol
ICBO
IEBO
hFE
fT
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
Cob
Cre
Conditions
VCB=(-
-)200V, IE=0A
VEB=(-
-)4V, IC=0A
VCE=(-
-)10V, IC=(--)10mA
VCE=(-
-)30V, IC=(--)10mA
IC=(--)20mA, IB=(--)2mA
IC=(--)20mA, IB=(--)2mA
IC=(--)10μA, IE=0A
IC=(--)1mA, RBE=∞
IE=(-
-)10μA, IC=0A
VCB=(-
-)30V, f=1MHz
VCB=(-
-)30V, f=1MHz
(--)300
(--)300
(--)5
(3.1)2.6
(2.3)1.8
40*
70
(-
-)0.6
(-
-)1.0
Ratings
min
typ
max
(-
-)0.1
(-
-)0.1
320*
MHz
V
V
V
V
V
pF
pF
Unit
μA
μA
*
: The 2SA1479 / 2SC3789 are classified by 10mA hFE as follws:
Rank
C
D
E
hFE
40 to 80
60 to 120
100 to 200
F
160 to 320
Package Dimensions
unit : mm (typ)
7516A-002
8.0
4.0
1.0
3.6
1.0
1.4
3.3
3.0
3.0
7.5
11.0
1
2
3
15.5
1.6
0.8
0.8
0.75
1.5
0.7
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
2.4
4.8
1.7
--
8
--
7
IC -- VCE
2SA1479
8
7
IC -- VCE
2SC3789
Collector Current, IC -- mA
Collector Current, IC -- mA
--
6
--
5
--
4
--
3
--
2
--
1
0
0
--40μA
--30μA
6
5
40μA
30μA
4
3
2
--20μA
20μA
--10μA
10μA
1
IB=0
μA
--
2
--
4
--
6
--
8
Collector-to-Emitter Voltage, VCE -- V
--
10
ITR03763
0
0
2
4
IB=0
μA
6
8
10
ITR03764
Collector-to-Emitter Voltage, VCE -- V
No.2093-2/5
2SA1479 / 2SC3789
--
8
--
7
IC -- VCE
2SA1479
--40
μ
A
8
7
IC -- VCE
2SC3789
40
μ
A
Collector Current, IC -- mA
--
6
--
5
--
4
--
3
--
2
--
1
0
0
Collector Current, IC -- mA
6
5
4
--30
μ
A
30
μ
A
--20
μ
A
20
μA
3
2
1
--10μA
10μA
IB=0
μA
0
40
80
120
160
200
IB=0
μA
--
40
--
80
--
120
--
160
Collector-to-Emitter Voltage, VCE -- V
--
200
ITR03765
0
Collector-to-Emitter Voltage, VCE -- V
ITR03766
120
--
120
--
100
IC -- VBE
2SA1479
VCE=--5V
IC -- VBE
2SC3789
VCE=5V
100
Collector Current, IC -- mA
Collector Current, IC -- mA
--25
°
C
--
60
--
40
--
20
0
0
60
40
20
--
0.2
--
0.4
--
0.6
--
0.8
Base-to-Emitter Voltage, VBE -- V
--
1.0
ITR03767
0
0
0.2
0.4
0.6
0.8
1.0
ITR03768
1000
7
5
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
1000
7
5
hFE -- IC
2SA1479
VCE=--10V
DC Current Gain, hFE
DC Current Gain, hFE
3
2
3
2
Ta=75
°
C
25
°
C
Ta=75
°
C
25
°
C
--25
°
C
100
7
5
3
2
10
--25
°
C
100
7
5
3
2
--
1.0
2
2
3
2
5
3
--
10
Collector Current, IC -- mA
5
7
7
--
100
2
10
1.0
2
3
5
7 10
2
3
5
--25
°
C
2SC3789
VCE=10V
7
2
100
ITR03770
25
°
C
ITR03769
2
f T -- IC
Collector Current, IC -- mA
f T -- IC
Gain-Bandwidth Product, f T -- MHz
Gain-Bandwidth Product, f T -- MHz
2SA1479
VCE=--30V
25
°
C
3
5
--
80
Ta=75
°
C
80
Ta=75
°
C
2SC3789
VCE=30V
100
7
5
100
7
5
3
2
3
2
10
7
5
5
7
10
7
5
5
7 1.0
2
3
5
7
2
7
2
100
ITR03772
--
1.0
2
2
3
5
--
10
Collector Current, IC -- mA
3
5
7
7
--
100
2
10
ITR03771
Collector Current, IC -- mA
No.2093-3/5
2SA1479 / 2SC3789
2
Cob -- VCB
2SA1479
f=1MHz
2
Cob -- VCB
2SC3789
f=1MHz
Output Capacitance, Cob -- pF
10
7
5
Output Capacitance, Cob -- pF
2
2
3
5 7
--
100
2
--
10
Collector-to-Base Voltage, VCB -- V
ITR03773
3
5
7
10
7
5
3
2
3
2
1.0
7
5
1.0
7
5
1.0
2
3
5
7
10
2
3
5
7
2
100
ITR03774
--
1.0
2
Cre -- VCB
Collector-to-Base Voltage, VCB -- V
2
Cre -- VCB
Reverse Transfer Capacitance, Cre -- pF
10
7
5
Reverse Transfer Capacitance, Cre -- pF
2SA1479
f=1MHz
2SC3789
f=1MHz
10
7
5
3
2
3
2
1.0
7
5
1.0
7
5
1.0
2
3
5
7
10
2
3
5
7
2
100
ITR03776
--
1.0
--
10
7
2
2
3
5 7
--
100
2
--
10
Collector-to-Base Voltage, VCB -- V
ITR03775
3
5
7
VCE(sat) -- IC
Collector-to-Base Voltage, VCB -- V
10
7
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
3
2
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
5
2SA1479
IC / IB=10
5
3
2
1.0
7
5
3
2
0.1
7
5
2SC3789
IC / IB=10
--
1.0
7
5
3
2
--
0.1
7
5
3
5
7
--
1.0
2
2
3
5
--
10
Collector Current, IC -- mA
3
5
7
7
--
100
2
3
5 7
1.0
2
3
5
7
10
2
3
5
ITR03777
10
7
--
10
7
VBE(sat) -- IC
Collector Current, IC -- mA
7 100
2
ITR03778
VBE(sat) -- IC
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
5
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
2SA1479
IC / IB=10
2SC3789
IC / IB=10
5
3
2
3
2
--
1.0
7
5
3
2
5
7
2
2
3
5
--
10
Collector Current, IC -- mA
3
5
7
7
2
1.0
7
5
3
2
5
7 1.0
2
3
5
7
10
2
3
5
7 100
2
ITR03780
--
1.0
--
100
ITR03779
Collector Current, IC -- mA
No.2093-4/5
2SA1479 / 2SC3789
3
2
ASO
ICP=200mA
IC=100mA
2SA1479 / 2SC3789
s
0
μ
50
s
1m
8
7
PC -- Ta
2SA1479 / 2SC3789
Collector Current, IC -- mA
100
7
5
3
2
DC
DC
op
era
t
s
Collector Dissipation, PC -- W
10
m
6
5
ion
(T
a=
op
er
(T
ation
c=
25
°
C
)
Id
ea
4
3
2
1
lr
10
7
5
3
2
25
°
C
)
ad
iat
io
n
No hea
t
sink
80
100
120
140
160
(For PNP, minus sign is omitted.)
5
7
10
2
3
5
7
100
2
3
5
0
0
20
40
60
Collector-to-Emitter Voltage, VCE -- V
ITR03782
Ambient Temperature, Ta --
°
C
ITR03781
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of January , 2009. Specifications and information herein are subject
to change without notice.
PS No.2093-5/5
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