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2SD882-R-BP

产品描述Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, PLASTIC PACKAGE-3
产品类别分立半导体    晶体管   
文件大小337KB,共2页
制造商Micro Commercial Components (MCC)
标准
下载文档 详细参数 选型对比 全文预览

2SD882-R-BP概述

Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, PLASTIC PACKAGE-3

2SD882-R-BP规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
零件包装代码SIP
包装说明ROHS COMPLIANT, PLASTIC PACKAGE-3
针数3
Reach Compliance Code_compli
ECCN代码EAR99
最大集电极电流 (IC)3 A
集电极-发射极最大电压30 V
配置SINGLE
最小直流电流增益 (hFE)60
JEDEC-95代码TO-126
JESD-30 代码R-PSFM-T3
JESD-609代码e3
湿度敏感等级1
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型NPN
认证状态Not Qualified
表面贴装NO
端子面层Matte Tin (Sn)
端子形式THROUGH-HOLE
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管元件材料SILICON
标称过渡频率 (fT)50 MHz
Base Number Matches1

文档预览

下载PDF文档
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
2SD882-R
2SD882-O
2SD882-Y
2SD882-GR
NPN Silicon
Plastic-Encapsulate
Transistor

A
K
N
Features
Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Capable of 1.25Watts of Power Dissipation.
Collector-current 3.0A
Collector-base Voltage 40V
Operating and storage junction temperature range: -55
O
C to +150
O
C
Halogen
free available upon request by adding suffix "-HF"
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Collector-Emitter Breakdown Voltage
(I
C
=10mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=100uAdc, I
E
=0)
Emitter-Base Breakdown Voltage
(I
E
=100uAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=40Vdc, I
E
=0)
Collector Cutoff Current
(V
CE
=30Vdc, I
B
=0)
Emitter Cutoff Current
(V
EB
=6.0Vdc, I
C
=0)
DC Current Gain
(I
C
=1.0Adc, V
CE
=2.0Vdc)
DC Current Gain
(I
C
=100mAdc, V
CE
=2.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=2.0Adc, I
B
=0.2Adc)
Base-Emitter Saturation Voltage
(I
C
=2.0Adc, I
B
=0.2Adc)
Transition Frequency
(V
CE
=5.0Vdc, I
C
=0.1Adc, f=10MHz)
Min
30
40
6.0
---
---
---
Max
---
---
---
1.0
1.0
1.0
Units
Vdc
Vdc
Adc
uAdc
1
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
D
E

B
M
2
3
L
uAdc
G




uAdc
ON CHARACTERISTICS
h
FE-1
h
FE-2
V
CE(sat)
V
BE(sat)
fT
60
32
---
---
50
400
---
0.5
2.0
---
---
C
---
Vdc
Vdc
MHz
J
DIMENSIONS
F
PIN 1.
PIN 2.
PIN 3.
Q
EMITTER
COLLECTOR
BASE
CLASSIFICATION OF H
FE
Rank
Range
R
60-120
O
100-200
Y
160-320
GR
200-400










L
M
N
Q
Notes: 1.
High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7.
 





0.291
0.307
0.417
0.433
0.602
0.618
4
1
0.118
0.126
0.026
0.034
0.046
0.054
0.090TYP
0.098
0.114
0.083
0.091
0.000
0.012
0.043
0.059
0.018
0.024






7.40
7.80
10.60
11.00
15.30
15.70
3.90
4.10
3.00
3.20
0.66
0.86
1.17
1.37
2.290TYP
2.50
2.90
2.10
2.30
0.00
0.30
1.10
1.50
0.45
0.60
 
www.mccsemi.com
Revision:
B
1 of 2
2013/01/01

2SD882-R-BP相似产品对比

2SD882-R-BP 2SD882-R-BP-HF 2SD882-Y-BP 2SD882-Y-BP-HF 2SD882-O-BP 2SD882-O-BP-HF 2SD882-GR-BP 2SD882-GR-BP-HF
描述 Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, PLASTIC PACKAGE-3 Power Bipolar Transistor, Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, PLASTIC PACKAGE-3 Power Bipolar Transistor, Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, PLASTIC PACKAGE-3 Power Bipolar Transistor, Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, PLASTIC PACKAGE-3 Power Bipolar Transistor,
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合 符合
Reach Compliance Code _compli _compli _compli _compli _compli _compli _compli _compli
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
湿度敏感等级 1 1 1 1 1 1 1 1
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1 1 1 1 1 1 1

 
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