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2SK184-BL

产品描述TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-4E1C, 3 PIN, FET General Purpose Small Signal
产品类别分立半导体    晶体管   
文件大小308KB,共4页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
下载文档 详细参数 选型对比 全文预览

2SK184-BL概述

TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-4E1C, 3 PIN, FET General Purpose Small Signal

2SK184-BL规格参数

参数名称属性值
包装说明2-4E1C, 3 PIN
针数3
Reach Compliance Codeunknow
其他特性LOW NOISE
配置SINGLE
FET 技术JUNCTION
JESD-30 代码R-PSIP-T3
元件数量1
端子数量3
工作模式DEPLETION MODE
最高工作温度125 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式IN-LINE
极性/信道类型N-CHANNEL
认证状态Not Qualified
表面贴装NO
端子形式THROUGH-HOLE
端子位置SINGLE
晶体管应用AMPLIFIER
晶体管元件材料SILICON
Base Number Matches1

文档预览

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2SK184
TOSHIBA Field Effect Transistor
Silicon N Channel Junction Type
2SK184
Low Noise Audio Amplifier Applications
High |Y
fs
|: |Y
fs
| = 15 mS (typ.) (V
DS
= 10 V, V
GS
= 0)
High breakdown voltage: V
GDS
=
−50
V
Low noise: NF = 1.0dB (typ.)
(V
DS
= 10 V, I
D
= 0.5 mA, f = 1 kHz, R
G
= 1 kΩ)
High input impedance: I
GSS
=
−1
nA (max) (V
GS
=
−30
V)
Small package
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Symbol
V
GDS
I
G
P
D
T
j
T
stg
Rating
−50
10
200
125
−55~125
Unit
V
mA
mW
°C
°C
JEDEC
Note:
Using continuously under heavy loads (e.g. the application of
JEITA
high temperature/current/voltage and the significant change in
TOSHIBA
2-4E1C
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.13 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Symbol
I
GSS
V
(BR) GDS
I
DSS
(Note)
V
GS (OFF)
⎪Y
fs
C
iss
C
rss
NF (1)
Noise figure
NF (2)
Test Condition
V
GS
= −30
V, V
DS
=
0
V
DS
=
0, I
G
= −100 μA
V
DS
=
10 V, V
GS
=
0
V
DS
=
10 V, I
D
=
0.1
μA
V
DS
=
10 V, V
GS
=
0, f
=
1 kHz
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
V
DG
=
10 V, I
D
=
0, f
=
1 MHz
V
DS
=
10 V, R
G
=
1 kΩ, I
D
=
0.5 mA,
f
=
10 Hz
V
DS
=
10 V, R
G
=
1 kΩ, I
D
=
0.5 mA,
f
=
1 kHz
Min
−50
1.2
−0.2
4.0
Typ.
15
13
3
5
1
Max
−1.0
14.0
−1.5
10
dB
2
Unit
nA
V
mA
V
mS
pF
pF
Note: I
DSS
classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6.0~14.0 mA
1
2007-11-01

2SK184-BL相似产品对比

2SK184-BL 2SK184-Y
描述 TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-4E1C, 3 PIN, FET General Purpose Small Signal TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-4E1C, 3 PIN, FET General Purpose Small Signal
包装说明 2-4E1C, 3 PIN 2-4E1C, 3 PIN
针数 3 3
Reach Compliance Code unknow unknow
其他特性 LOW NOISE LOW NOISE
配置 SINGLE SINGLE
FET 技术 JUNCTION JUNCTION
JESD-30 代码 R-PSIP-T3 R-PSIP-T3
元件数量 1 1
端子数量 3 3
工作模式 DEPLETION MODE DEPLETION MODE
最高工作温度 125 °C 125 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 IN-LINE IN-LINE
极性/信道类型 N-CHANNEL N-CHANNEL
认证状态 Not Qualified Not Qualified
表面贴装 NO NO
端子形式 THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE
晶体管应用 AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON SILICON
Base Number Matches 1 1

 
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